ON NGTG35N65FL2WG Igbt - field stop ii Datasheet

NGTG35N65FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
www.onsemi.com
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
35 A, 650 V
VCEsat = 1.70 V
EOFF = 0.28 mJ
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
A
70
35
Pulsed collector current, Tpulse
limited by TJmax
ICM
120
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
V
V
C
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
TO−247
CASE 340L
STYLE 4
G
E
MARKING DIAGRAM
W
300
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G35N65FL2
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2015
September, 2016 − Rev. 1
1
Device
Package
Shipping
NGTG35N65FL2WG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTG35N65FL2W/D
NGTG35N65FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.50
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 35 A
VGE = 15 V, IC = 35 A, TJ = 175°C
VCEsat
1.50
−
1.70
2.20
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
−
0.5
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
3115
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
149
−
Cres
−
88
−
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 35 A, VGE = 15 V
Gate to collector charge
Qg
−
125
−
Qge
−
30
−
Qgc
−
63
−
td(on)
−
72
−
tr
−
40
−
td(off)
−
132
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 35 A
Rg = 10 W
VGE = 0 V/ 15 V*
tf
−
75
−
Eon
−
0.84
−
Eoff
−
0.28
−
Total switching loss
Ets
−
1.12
−
Turn−on delay time
td(on)
−
70
−
tr
−
38
−
td(off)
−
135
−
tf
−
96
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 35 A
Rg = 10 W
VGE = 0 V/ 15 V*
Eon
−
1.05
−
Turn−off switching loss
Eoff
−
0.50
−
Total switching loss
Ets
−
1.55
−
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTG35N65FL2WG.
www.onsemi.com
2
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
140
140
VGE = 20 to 15 V
13 V
100
80
60
11 V
40
10 V
7V
20
0
1
2
3
4
9V
8V
6
5
15 V
VGE = 20 to 17 V
100
13 V
80
60
11 V
40
10 V
9V
8V
7V
20
0
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
140
TJ = −55°C
VGE = 20 to
15 V
120
13 V
100
80
60
11 V
40
10 V
20
0
TJ = 150°C
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
140
IC, COLLECTOR CURRENT (A)
7
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
120
7V
9V
8V
0
1
2
3
4
5
6
120
TJ = 25°C
100
80
TJ = 150°C
60
40
20
0
7
0
8
2
4
6
8
10
12
14
16
18
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.75
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
−75 −50 −25
10,000
IC = 70 A
Cies
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
IC = 35 A
IC = 15 A
IC = 5 A
1000
Coes
100
Cres
TJ = 25°C
10
0
25
50
75
0
100 125 150 175 200
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
www.onsemi.com
3
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
VGE, GATE−EMITTER VOLTAGE (V)
20
18
16
14
12
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 35 A
2
0
0
40
20
60
80
120
100
140
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
1.75
1000
SWITCHING LOSS (mJ)
1.50
1.25
SWITCHING TIME (ns)
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
Eon
1.00
0.75
Eoff
0.50
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.25
0
0
20
40
60
80
100
120
140
10
160
0
20
Figure 8. Switching Loss vs. Temperature
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
100
120
140
160
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eon
2.0
1.5
Eoff
1.0
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.5
0
15
80
Figure 9. Switching Time vs. Temperature
3.5
2.5
60
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
3.0
40
20
25
30 35
40
45 50
55 60
10
15
65 70 75
20
25
30 35
40
45 50
55 60
65 70 75
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
www.onsemi.com
4
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
10000
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
SWITCHING LOSS (mJ)
4.0
3.5
SWITCHING TIME (ns)
4.5
Eon
3.0
2.5
2.0
1.5
Eoff
1.0
1000
td(off)
tf
td(on)
100
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
tr
0.5
0
10
5
15
25
35
45
55
75
65
5
45
55
65
75
Figure 13. Switching Time vs. Rg
85
1000
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.4
35
Figure 12. Switching Loss vs. Rg
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.6
25
Rg, GATE RESISTOR (W)
2.0
1.8
15
Rg, GATE RESISTOR (W)
1.2
1.0
Eoff
0.8
0.6
0.4
td(off)
100
tf
td(on)
tr
0.2
10
175
0
150
200 250
300
350
400 450
500
550
600
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
575
1000
1000
1 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
225
100 ms
100
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
100
1000
VGE = 15 V, TC = 125°C
100
10
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
www.onsemi.com
5
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R(t) (°C/W)
0.1
RqJC = 0.50
20%
10%
5%
0.01
Junction R1
2%
R2
Rn
C2
Cn
Ci = ti/Ri
0.001
C1
Single Pulse
Case
Ri (°C/W)
0.0642
0.0608
0.0507
0.1706
0.1422
0.0094
ti (sec)
0.0016
0.0052
0.0197
0.0185
0.0703
3.3481
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
www.onsemi.com
6
0.1
1
NGTG35N65FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
W
J
F 2 PL
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NGTG35N65FL2W/D