Transistors SMD Type PNP Transistors MMBTA94 (KMBTA94) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 ● High Breakdown Voltage ●Complement to MMBTA44 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ■ Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -200 Collector Current -Pulsed ICM -300 Collector Power Dissipation PC 350 mW RΘJA 150 ℃/W Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 +0.1 0.38 -0.1 2.Emitter 3.collector Unit V mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -400 -400 Typ Max V Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -400 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Transition frequency -5 VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 VCE(sat)2 IC=-50 mA, IB=-5mA -0.3 VBE(sat) IC= -10mA, IB=- 1mA hFE(1) VCE= -10V, IC= -10mA 80 hFE(2) VCE= -10V, IC= -1mA 70 hFE(3) VCE= -10V, IC= -100mA 40 hFE(4) VCE= -10V, IC= -50mA 40 VCE= -20V, IC= 10mA,f=30MHz 50 fT Unit nA V -0.75 300 MHz ■ Classification of hfe(1) Type MMBTA94 MMBTA94-L Range 80-300 100-200 Marking 4D www.kexin.com.cn 1 Transistors SMD Type PNP Transistors MMBTA94 (KMBTA94) ■ Typical Characterisitics Static Characteristic -20 IC -80uA COLLECTOR CURRENT o Ta=100 C hFE -90uA DC CURRENT GAIN (mA) VCE= -10V COMMON EMITTER Ta=25℃ -100uA -15 hFE —— IC -1000 -70uA -10 -60uA -50uA -40uA -5 -100 o Ta=25 C -30uA -20uA -0 IB=-10uA -0 -2 -4 -6 -8 -10 -12 -14 COLLECTOR-EMITTER VOLTAGE -16 VCE -18 VBEsat —— IC -1000 -1 -10 COLLECTOR CURRENT VCEsat —— -10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -10 -20 (V) -800 Ta=25℃ -600 -400 Ta=100℃ IC (mA) -100 -200 -100 -200 IC β=10 -1 Ta=100℃ -0.1 Ta=25℃ -0.01 -200 -0 -0.1 -1 -10 -100 COLLECTOR CURRENT fT 60 —— IC -1E-3 -200 -1 (mA) -10 COLLECTOR CURRENT IC 1000 Cob / Cib —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C o 50 C CAPACITANCE TRANSITION FREQUENCY 45 40 35 Cib 10 Cob 25 -0 -10 -20 -30 -40 COLLECTOR CURRENT Pc 400 COLLECTOR POWER DISSIPATION Pc (mW) 100 30 20 —— IC -50 -60 125 150 (mA) Ta 350 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 2 Ta=25 C (pF) 55 fT (MHz) VCE=-20V www.kexin.com.cn 100 Ta (℃) 1 -0.1 -1 REVERSE VOLTAGE V (V) -10 -20