ON MMBT589LT1G High current surface mount pnp silicon switching Datasheet

MMBT589LT1G,
NSVMMBT589LT1G
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
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30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23 (TO−236)
CASE 318
STYLE 6
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−30
Vdc
Collector −Base Voltage
VCBO
−50
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−1.0
Adc
ICM
−2.0
A
Collector Current − Continuous
Collector Current − Peak
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
310
2.5
mW
mW/°C
PD
Thermal Resistance
Junction−to−Ambient (Note 1)
RqJA
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
Thermal Resistance
Junction−to−Ambient (Note 2)
RqJA
PDsingle
Junction and Storage Temperature
TJ, Tstg
1
°C/W
403
710
5.7
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
G3 M G
G
mW
mW/°C
°C/W
176
575
mW
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
G3 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBT589LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
NSVMMBT589LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1998
October, 2016 − Rev. 7
1
Publication Order Number:
MMBT589LT1/D
MMBT589LT1G, NSVMMBT589LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
|
−30
−
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−50
−
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
−
−
−0.1
−
−0.1
−
−0.1
100
100
80
40
−
300
−
−
−
−
−
−0.25
−0.30
−0.65
−
−1.2
−
−1.1
100
−
−
15
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −30 Vdc)
ICES
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3) (Figure 1)
(IC = −1.0 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = 2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3) (Figure 3)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = 0.1 A)
(IC = −2.0 A, IB = −0.2 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3) (Figure 2)
(IC = −1.0 A, IB = −0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
−
V
V
V
fT
Output Capacitance
(f = 1.0 MHz)
MHz
Cobo
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
MMBT589LT1G, NSVMMBT589LT1G
200
230
210
150
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
VCE = -2.0 V
100
50
VCE = -1.0 V
125°C
190
170
150
25°C
130
110
90
-55°C
70
0
50
0.01
0.001
0.1
1.0
10
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain versus
Collector Current
Figure 2. DC Current Gain versus
Collector Current
VBE(sat) , BASE EMITTER SATURATION
VOLTAGE (VOLTS)
1.0
0.9
VBE(sat)
0.8
V, VOLTAGE (VOLTS)
100
IC, COLLECTOR CURRENT (AMPS)
1.0
0.7
VBE(on)
0.6
0.5
0.4
0.3
0.2
0.1
VCE(sat)
0
1.0
100
10
0.8
0.75
IC/IB = 100
0.7
0.65
0.6
0.55
0.5
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. “On” Voltages
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
0.6
1000 mA
0.4
100 mA
50 mA
10 mA
0
0.1
IC/IB = 10
IC, COLLECTOR CURRENT (mA)
0.8
0.01
0.9
0.85
1000
1.0
0.2
0.95
VCE(sat) , COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
1.0
1.0
10
100
1000
1.8
1.6
IC/IB = 100
1.4
1.2
1.0
0.8
0.6
IC/IB = 10
0.4
0.2
0
0.001
0.01
0.1
1.0
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage
versus Collector Current
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
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3
10
MMBT589LT1G, NSVMMBT589LT1G
IC , COLLECTOR CURRENT (AMPS)
10
SINGLE PULSE TEST AT Tamb = 25°C
1s
10 ms
100 ms
1 ms
100 ms
1.0
2s
0.1
0.01
0.1
1.0
10
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
100
Figure 7. Safe Operating Area
0.5
0.2
0.1
1.0E+00
0.05
0.02
D = 0.01
Rthja , (t)
1.0E-01
1.0E-02
r(t)
1.0E-03
1E-05
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 8. Normalized Thermal Response
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4
10
100
1000
MMBT589LT1G, NSVMMBT589LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT589LT1/D
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