MOSFET SMD Type N-Channel MOSFET AO6402-HF (KO6402-HF) ( SOT-23-6 ) Unit: mm +0.1 ■ Features 6 5 4 1 2 3 0.4 0.4 -0.1 ● RDS(ON) ＜ 31mΩ (VGS = 10V) ● RDS(ON) ＜ 43mΩ (VGS = 4.5V) 0.55 ● ID = 5 A (VGS = 10V) +0.2 2.8 -0.1 +0.2 1.6 -0.1 ● VDS (V) = 30V +0.02 0.15 -0.02 +0.01 -0.01 ● Pb−Free Package May be Available. The G−Suffix Denotes a +0.2 -0.1 +0.1 1.1 -0.1 Pb−Free Lead Finish 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain +0.1 0.68 -0.1 0-0.1 D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 5 4 A 20 1.25 0.8 W 100 130 RthJL 70 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO6402-HF (KO6402-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250 uA Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=5A ID=250μA, VGS=0V Min Typ 30 VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 1.2 ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=10V, VDS=5V 255 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=5A 5.2 6.3 3.2 0.85 Turn-On Rise Time tr Turn-Off DelayTime td(off) Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD Marking D2** F www.kexin.com.cn Ω nC 2.5 ns 14.5 3.5 IF= 5A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking pF 50 2.55 4.5 trr 310 4.9 1.3 Diode Forward Voltage 2 1.6 Qgd VGS=10V, VDS=15V, RL=3Ω,RG=3Ω S 45 35 VGS=0V, VDS=0V, f=1MHz mΩ A 15 td(on) Body Diode Reverse Recovery Time V 25 VDS=5V, ID=5A Turn-On DelayTime tf 2.4 43 Gate Drain Charge Turn-Off Fall Time nA 31 Qg Qgs uA ±100 50 TJ=125℃ VGS=4.5V, ID=4A On State Drain Current Unit V VGS=10V, ID=5A Forward Transconductance Max 8.5 2.2 nC 1.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO6402-HF (KO6402-HF) ■ Typical Characterisitics 15 30 10V 25 4.5V 10 4V ID(A) ID (A) 20 15 3.5V 5 10 5 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 40 35 RDS(ON) (mΩ ) 25°C 125°C VGS=3V 0 VGS=4.5V 30 25 VGS=10V 1.8 VGS=10V ID=5A 1.6 1.4 1.2 VGS=4.5V10 ID=4A 1 0.8 20 0 3 6 9 12 0 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 100 ID=5A 1.0E+01 80 1.0E+00 60 IS (A) RDS(ON) (mΩ ) VDS=5V 7V 125°C 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 40 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO6402-HF (KO6402-HF) ■ Typical Characterisitics 10 8 350 300 Capacitance (pF) VGS (Volts) 400 VDS=15V ID=5A 6 4 Ciss 250 200 150 Coss 100 2 50 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 1000 10µs RDS(ON) limited Power (W) ID (Amps) 10.0 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) . Figure 10: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=130°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000