SeCoS BC727 Pnp silicon general purpose transistor Datasheet

BC727
-3A, -40V
PNP Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-26
FEATURES
High current output up to -3A
Low saturation voltage
D
MARKING
H
A
727
C
B
J
L
F
K
G
= Date Code
E
PACKAGE INFORMATION
REF.
Package
MPQ
Leader Size
SOT-26
3K
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.20 REF.
1.40
1.80
0.95 REF.
0.60 REF.
Millimeter
Min.
Max.
0.37 REF.
0.30
0.55
0.12 REF.
0.10
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-5
IC
-3
V
A
Collector Currrent
Total Power Dissipation @ TC=25°C
3
Thermal Resistance Junction-ambient Max
1
Junction & Storage Temperature
PD
1.2
W
RθJC
105
°C/W
TJ, TSTG
150, -55 ~ 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
-40
-
-
V
IC= -100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
-30
-
-
V
IC= -1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
-5
-
-
V
IE= -10µA, IC=0
Collector cut-off current
ICBO
-
-
-0.1
µA
VCB= -30V, IE=0
Emitter cut-off current
IEBO
-
-
-0.1
µA
VEB= -5V, IC=0
-
-0.15
-0.25
-
-0.85
-1
-
-0.25
-0.5
-
-0.8
-1.1
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
2
Transition frequency
Collector output capacitance
2
2
VCE(sat)
VBE(sat)
IC= -0.5A, IB= -5mA
V
V
-
-1
-1.5
30
-
-
160
-
320
fT
-
80
-
MHz
Cob
-
55
-
pF
hFE
IC= -2A, IB= -20mA
IC= -2A, IB= -200mA
IC= -0.5A, IB= -5mA
IC= -2A, IB= -200mA
VCE= -2V, IC= -20mA
VCE= -2V, IC= -1A
VCE= -5V, IC= -100mA,
f=100MHz
VCB= -10V, f=1MHz
NOTE:
1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 167℃/W when mounted on Min. copper pad.
2. The data tested by pulsed , pulse width≦300us , duty cycle ≦2%
3. The power dissipation is limited by 150 ℃junction temperature
http://www.SeCoSGmbH.com/
26-Mar-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
BC727
Elektronische Bauelemente
-3A, -40V
PNP Silicon General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
26-Mar-2014 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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