Panasonic MA3XD21 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3XD21
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40+0.10
–0.05
0.16+0.10
–0.06
(0.95) (0.95)
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
2.90+0.20
–0.05
Unit
VR
15
V
Repetitive peak reverse-voltage
VRRM
15
V
Average forward current *1
IF(AV)
1
A
Non-repetitive peak forwardsurge-current *2
IFSM
3
A
Reverse voltage (DC)
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
10˚
1.1+0.3
–0.1
Rating
1.1+0.2
–0.1
Symbol
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
0 to 0.1
Parameter
5˚
2
1
(0.65)
• IF(AV) = 1 A rectification is possible
• Low forward voltage VF
• Mini type 3-pin package
2.8+0.2
–0.3
1.50+0.25
–0.05
■ Features
0.4±0.2
3
Marking Symbol: M6F
Internal Connection
3
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 6 V
1.5
mA
Forward voltage (DC)
VF
IF = 1 A
0.4
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
180
pF
Reverse recovery time
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
12
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
Publication date: February 2002
SKH00095BED
1
MA3XD21
IF  V F
104
10
1
−1
102
Ta = 125°C
10
75°C
1
25°C
Terminal capacitance Ct (pF)
Reverse current IR (mA)
Forward current IF (mA)
75°C
25°C
−20°C
10−1
10−2
0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
2
Ta = 25°C
103
102
10−3
Ct  VR
250
Ta = 125°C
103
10
IR  V R
104
0.6
10−2
0
5
10
15
Reverse voltage VR (V)
SKH00095BED
20
200
150
100
50
0
0
5
10
15
Reverse voltage VR (V)
20
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2001 MAR
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