NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIRE GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted. nPACKAGE OUTLINE NJG1312PC1 nFEATURES lLow supply voltage operation lLow current consumption lHigh gain lPout at 1dB Gain Compression point lUltra small & thin package +2.9V typ. 17mA typ. @ Pout=+5.6dBm 19dB typ. @ 900MHz +10dBm typ. @ 900MHz FFP16-C1 (Mount Size: 2.5x2.5x0.85mm) nPIN CONFIGURATION FFP16 Type (Top View) 12 11 10 9 13 8 14 7 15 6 16 5 1 2 3 Pin Connection 1.PC 9.RFout 2.GND 10.GND 3.GND 11.P2 4.RFin 12. VCTR2 5.NC 13. VCTR1 6.GND 14.P1 7.GND 15.GND 8.BPC 16.GND 4 -1- NJG1312PC1 nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Control Voltage Input Power Power Dissipation Operating Temperature Storage Temperature (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6 V 6 V 15 dBm 400 mW -40~+85 °C SYMBOL CONDITIONS VDD VCTL Pin VDD=2.9V PD Topr Tstg -55~+125 °C nELECTRICAL CHARACTERISTICS (VDD=2.9V, VCTR=2.7V, f=900MHz, Ta=-20~+80°C, Zs=Zl=50Ω, Rs (External)=180Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 887 900 925 MHz Drain Voltage VDD 2.7 2.9 5.0 V RF SW ON Operating Current IDD 17 22 mA − Pout=+5.6dBm Control Current ICTL − 1.0 2.0 uA Control Voltage(LOW) VCTL(L) -0.2 0 0.2 V Control Voltage(HIGH) VCTL(H) 2.5 2.7 5.5 V 17 19 22 dB − 0.5 − dB -28.5 -27 -25.5 dB − +10 − dBm − -55 -51 dBc − -73 -68 dBc − − 2.4 1.4 3.0 2.0 Small Signal Gain Gain Gain Flatness Gflat Gain Control Range Pout at 1dB Gain Compression point Gcont RF SW ON Pin=-15dBm RF SW ON Pin=-15dBm f=887~925MHz Pin=-15dBm P-1dB RF SW ON IN-Band Spurious1 IBS1 IN-Band Spurious2 IBS2 Input VSWR Output VSWR Note) RF SW ON RF SW ON RF SW ON/OFF in the table above: Control voltages (V CTL1, V CTL2) are as follows RF SW ON RF SW OFF -2- VSWRi VSWRo RF SW ON, Pout=+5.6dBm OFFSET 900kHz RF SW ON, Pout=+5.6dBm OFFSET 1.98MHz P1: V CTL1=0V, V CTL2=2.7V P2: V CTL1=2.7V, V CTL2=0V P1: V CTL1=2.7V, V CTL2=0V P2: VCTL1=0V, VCTL2=2.7V NJG1312PC1 nTERMINAL INFORMATION No. 1 2 3 4 5 6 7 SYMBOL PC GND GND RFin NC GND GND 8 BPC 9 RFout 10 11 12 13 14 15 16 GND P2 VCTL2 VCTL1 P1 GND GND DESCRIPTIONS RF output terminal of SW. Ground terminal. Ground terminal. RF signal input terminal of driver amplifier. Neutral terminal. Should be connected to the ground. Ground terminal. Ground terminal. Source electrode terminal of driver amplifier. The operating current is chosen by a resistor connected between this terminal and ground. RF signal output terminal of driver amplifier. Please use choke coil for power supply of driver amplifier at this terminal. Ground terminal. RF input terminal 2 of SW. Control terminal 2 of RF signal. Please see the truth table. Control terminal 1 of RF signal. Please see the truth table. RF input terminal 1 of SW. Ground terminal. Ground terminal. Notice: PC terminal at pin 1 should be connected to the GND through high resistance for pull-down (Max 560KΩ). nTRUTH TABLE VCTL1 0V 2.7V VCTL2 2.7V 0V P1-PC ON OFF P2-PC OFF ON -3- NJG1312PC1 nTYPICAL CHARACTERISTICS FREQUENCY CHARACTERISTICS FREQUENCY CHARACTERISTIC (V =2.9V, V DD CTR FREQUENCY CHARACTERISTICS FREQUENCY CHARACTERISTIC =2.7V, RF SW ON) 20 (V =2.9V, V DD CTR =2.7V, RF SW OFF) 10 0 -10 0 -20 S11 -10 -30 0 -10 -30 S21 S22 -20 -40 -30 -50 S12 S12 S22 -20 -40 -30 0.5 -20 S11 -40 1.5 2 Frequency (GHz) 2.5 -60 -50 0.5 -50 1 3 S12 (dB) -10 S11,S21,S22 (dB) 10 S12 (dB) S11,S21,S22 (dB) S21 -70 1 1.5 2 Frequency (GHz) 2.5 3 IDD, ICTR vs. TEMPERATURE Pin vs. Pout, IDD (V DD=2.9V, VCTR=2.7V, f=900MHz) 20 45 15 40 Pout 0 25 -5 20 IDD(mA) 30 DD 5 (mA) 35 P-1dB 9.73dBm 25 5 20 4 IDD 15 3 2 5 1 ICTR 15 -10 IDD -15 -20 6 10 I Pout (dBm) 10 30 -15 -10 -5 0 5 ICTR(uA) (VDD=2.9V, VCTR=2.7V, f=900MHz, Pout=5.6dBm) 0 -50 10 10 -25 0 25 50 75 0 100 Pin (dBm) cont ,G flat P-1dB, Psat, IN BAND SPURIOUS vs. TEMPERATURE vs. TEMPERATURE (V DD=2.9V, VCTR=2.7V, f=900MHz) 30 Gcont DD 15 0.3 10 0.2 (dB) 0.4 Gain flat 20 G flat 5 0 -50 -25 0 25 0.1 50 75 o Ambient Temperature ( C) 0 100 P-1dB, Psat, OIP3 (dBm) 0.5 G Gain, Gcont (dB) 25 -4- (V =2.9V, V 25 0.6 20 =2.7V, f=900MHz) CTR 1.98MHz offset OIP3 15 75 70 65 Psat 10 5 0 -50 P-1dB 0.9MHz offset -25 0 25 50 75 Ambient Temperature ( oC) 60 55 50 100 In Band Spurios (dBc) Pout =5.6dBm Gain, G NJG1312PC1 nTYPICAL CHARACTERISTICS Driver Amp. Scattering Parameters Table Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 S 11 mag (U) 0.902 0.907 0.901 0.896 0.880 0.864 0.839 0.824 0.797 0.779 0.754 0.737 0.715 0.696 0.676 0.663 0.644 0.628 0.617 0.603 0.594 0.582 0.577 0.574 0.577 0.580 (VDD=2.9V, Rs=180Ω, Zo=50Ω) S 21 ang (deg) -20.1 -25.8 -31.2 -36.8 -41.9 -46.9 -52.0 -56.6 -61.1 -65.6 -69.6 -73.8 -77.4 -81.3 -84.5 -88.0 -90.8 -93.9 -96.3 -98.9 -101.0 -102.9 -104.6 -106.1 -107.3 -108.4 mag (U) 4.427 4.762 4.897 5.018 4.992 5.006 4.891 4.837 4.675 4.580 4.428 4.301 4.122 3.973 3.800 3.653 3.478 3.334 3.163 3.016 2.850 2.702 2.546 2.389 2.234 2.069 S 12 ang (deg) -177.6 172.6 164.1 155.4 147.8 140.2 133.3 126.4 120.3 113.7 108.0 102.0 96.9 91.6 86.3 81.2 76.5 71.9 67.3 62.7 58.3 54.1 50.0 46.3 42.6 39.6 mag (U) 0.036 0.040 0.044 0.048 0.051 0.053 0.055 0.058 0.061 0.061 0.063 0.064 0.064 0.067 0.066 0.067 0.068 0.068 0.069 0.069 0.069 0.070 0.070 0.069 0.069 0.066 ang (deg) 53.9 49.6 45.4 41.9 37.6 35.0 32.6 28.1 27.1 22.8 21.4 19.0 15.3 13.3 10.4 7.8 6.2 3.9 1.7 -1.3 -3.5 -6.6 -10.5 -13.1 -17.0 -21.0 S 22 mag (U) 0.763 0.757 0.699 0.701 0.667 0.660 0.651 0.636 0.642 0.636 0.640 0.640 0.640 0.643 0.644 0.648 0.651 0.659 0.662 0.676 0.683 0.697 0.706 0.722 0.733 0.747 ang (deg) -47.8 -56.9 -63.4 -70.6 -77.0 -83.2 -88.6 -94.7 -99.9 -105.8 -110.2 -115.1 -119.4 -123.5 -127.8 -131.7 -135.3 -139.5 -143.0 -147.1 -150.9 -154.6 -158.4 -161.9 -165.5 -168.9 NJG1312PC1 ( TOP VIEW ) 16 15 14 13 1 12 2 11 3 10 4 9 S11 S22 5 6 7 8 Rs 180Ω Ref. Ref. Driver Amp. Scattering Parameters -5- NJG1312PC1 nAPPLICATION CIRCUIT P2 C9 C8 1000pF 39pF C2 100pF VCTR1 C1 100pF C7 100pF RFOUT C10 10pF P1 L3 15nH L2 15nH VDD=2.9V C11 10pF VCTR2 12 11 10 9 C6 0.75pF 13 8 14 7 15 6 5 16 1 2 3 4 NJG1312PC1 (TOP VIEW) C3 100pF L4 10nH R2 180Ω L1 8.2nH R1 270Ω VDD P2 C2 C11 nRECOMMENDED PCB DESIGN VCTR2 VCTR1 GND C9 C8 L3 C6 RFOUT C7 L2 R2 R1 L1 C10 C3 L4 P1 C1 PCB: FR-4 19.0x26.0mm, t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Zo=50Ω) CHIP SIZE:1005 [1] Chip parts list Parts ID -6- Comment C1~C11 MURATA GRM36 Series L1~L4 TAIYO-YUDEN HK1005 Series NJG1312PC1 nPACKAGE OUTLINE (FFP16-C1) 1pin INDEX 0.35 2pin INDEX 0.254±0.1 0.17 2.5±0.1 0.30 0.10 0.30 0.85±0.15 0.50 0.50 0.20 0.365 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT : mm : Ceramic : Epoxy resin : Au : 15mg 0.27 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. -7-