isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX16 DESCRIPTION ·Contunuous Collector Current-IC= -3A ·Collector Power Dissipation: PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCER Collector-Emitter Voltage RBE= 100Ω -150 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 7.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX16 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -140 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 100Ω -150 V V(BR)CEX Collector-Emitter Breakdown Voltage IC= -100mA; VBE= 1.5V -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -4V -1.7 V ICEX Collector Cutoff Current VCE= -140V;VBE= 1.5V VCE= -140V;VBE= 1.5V,TC=150℃ -1.0 -5.0 mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -1.0 mA hFE DC Current Gain IC= -0.5A; VCE= -4V Current Gain-Bandwidth Product IC= -0.2A; VCE= -10V fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B 2 20 MAX UNIT 80 4 MHz