Fairchild FDP15N65 650v n-channel mosfet Datasheet

UniFET
TM
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
Description
• 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( typical 48.5 nC)
• Low Crss ( typical 23.6 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP15N65
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
PD
Power Dissipation
FDPF15N65
650
(Note 1)
Unit
V
15
9.5
15*
9.5*
A
A
60
60*
A
± 30
V
(Note 2)
637
mJ
(Note 1)
15
A
Repetitive Avalanche Energy
(Note 1)
25.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
(TC = 25°C)
- Derate above 25°C
250
2.0
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
38.5
0.3
W
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. B
1
FDP15N65
FDPF15N65
Unit
0.5
3.3
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
April 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP15N65
FDP15N65
TO-220
--
--
50
FDPF15N65
FDPF15N65
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
650
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.65
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
VDS = 520V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.36
0.44
Ω
--
19.2
--
S
--
2380
3095
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 7.5A
gFS
Forward Transconductance
VDS = 40V, ID = 7.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
295
385
pF
--
23.6
35.5
pF
--
65
140
ns
--
125
260
ns
--
105
220
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 325V, ID = 15A
RG = 21.7Ω
(Note 4, 5)
VDS = 520V, ID = 15A
VGS = 10V
(Note 4, 5)
--
65
140
ns
--
48.5
63.0
nC
--
14.0
--
nC
--
21.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
15
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 15A
--
--
1.4
V
trr
Reverse Recovery Time
--
496
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 15A
dIF/dt =100A/μs
--
5.69
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP15N65 / FDPF15N65 Rev. B
2
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
1
10
ID, Drain Current [A]
Top :
0
10
1
10
o
150 C
o
25 C
o
-55 C
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
o
2. 250μs Pulse Test
2. TC = 25 C
0
10
-1
10
-1
0
10
2
1
10
10
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
1.0
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
o
1
10
o
150 C
o
25 C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
* Note : TJ = 25 C
0.0
0
0
10
20
30
40
10
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Ciss
3000
2000
1000
VDS = 130V
10
Crss = Cgd
Coss
VGS, Gate-Source Voltage [V]
Capacitances [pF]
4000
* Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID = 15A
0
-1
10
0
10
0
1
10
VDS, Drain-Source Voltage [V]
FDP15N65 / FDPF15N65 Rev. B
0
10
20
30
40
50
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
3.0
RDS(ON), (Normalized)
RDS(ON), (Normalized)
Drain-Source
On-Resistance
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
0.8
-100
-50
0
50
100
150
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.0
0.0
-100
-100
200
* Notes :
* Notes
1. VGS: = 10 V
1.2.VIGS==5.5
10 V
A
D
2. ID = 7.5 A
0.5
0.5
o
TJ, Junction Temperature [ C]
-50
-50
00
50
50
100
100
150
150
Figure 9-1. Safe Operating Area for FDP15N65
Figure 9-2. Safe Operating Area for FDPF15N65
2
10
2
10
10 μs
10
10 μs
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
0
10
ID, Drain Current [A]
ID, Drain Current [A]
100 μs
1 ms
1
* Notes :
o
1. TC = 25 C
-1
10
o
2. TJ = 150 C
100 μs
1
10
1 ms
10 ms
Operation in This Area
is Limited by R DS(on)
0
10
-1
100 ms
DC
* Notes :
o
1. TC = 25 C
10
3. Single Pulse
o
2. TJ = 150 C
3. Single Pulse
-2
10
200
200
o
JunctionTemperature
Temperature [[oC]
C]
TTJJ,,Junction
0
1
10
2
10
-2
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
18
ID, Drain Current [A]
15
12
9
6
3
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
FDP15N65 / FDPF15N65 Rev. B
4
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP15N65
10
0
(t), Thermal Response
D = 0 .5
10
0 .2
-1
0 .1
PDM
θJC
0 .0 5
-2
* N o te s :
t2
1 . Z θ J C ( t) = 0 .5
s in g le p u ls e
Z
10
t1
0 .0 2
0 .0 1
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FDPF15N65
0
0 .2
0 .1
0 .0 5
10
-1
PDM
t1
0 .0 2
0 .0 1
* N o te s :
t2
1 . Z θ J C ( t) = 3 .3
θJC
(t), Thermal Response
D = 0 .5
10
o
C /W M a x .
Z
2 . D u ty F a c to r , D = t 1 /t 2
10
10
3 . T J M - T C = P D M * Z θ J C ( t)
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FDP15N65 / FDPF15N65 Rev. B
5
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP15N65 / FDPF15N65 Rev. B
6
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP15N65 / FDPF15N65 Rev. B
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
FDP15N65 / FDPF15N65 Rev. B
8
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP15N65 / FDPF15N65 Rev. B
9
www.fairchildsemi.com
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Mechanical Dimensions
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
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This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
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Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
10
FDP15N65 / FDPF15N65 Rev. B
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
tm
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