UniFET TM FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP15N65 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FDPF15N65 650 (Note 1) Unit V 15 9.5 15* 9.5* A A 60 60* A ± 30 V (Note 2) 637 mJ (Note 1) 15 A Repetitive Avalanche Energy (Note 1) 25.0 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25°C) - Derate above 25°C 250 2.0 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 38.5 0.3 W W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2007 Fairchild Semiconductor Corporation FDP15N65 / FDPF15N65 Rev. B 1 FDP15N65 FDPF15N65 Unit 0.5 3.3 °C/W 0.5 -- °C/W 62.5 62.5 °C/W www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET April 2007 Device Marking Device Package Reel Size Tape Width Quantity FDP15N65 FDP15N65 TO-220 -- -- 50 FDPF15N65 FDPF15N65 TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 650 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.65 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V VDS = 520V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.36 0.44 Ω -- 19.2 -- S -- 2380 3095 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 7.5A gFS Forward Transconductance VDS = 40V, ID = 7.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 295 385 pF -- 23.6 35.5 pF -- 65 140 ns -- 125 260 ns -- 105 220 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 325V, ID = 15A RG = 21.7Ω (Note 4, 5) VDS = 520V, ID = 15A VGS = 10V (Note 4, 5) -- 65 140 ns -- 48.5 63.0 nC -- 14.0 -- nC -- 21.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A -- -- 1.4 V trr Reverse Recovery Time -- 496 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 15A dIF/dt =100A/μs -- 5.69 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP15N65 / FDPF15N65 Rev. B 2 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 1 10 ID, Drain Current [A] Top : 0 10 1 10 o 150 C o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test o 2. 250μs Pulse Test 2. TC = 25 C 0 10 -1 10 -1 0 10 2 1 10 10 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1.0 0.8 0.6 VGS = 10V 0.4 VGS = 20V 0.2 o 1 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test * Note : TJ = 25 C 0.0 0 0 10 20 30 40 10 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Ciss 3000 2000 1000 VDS = 130V 10 Crss = Cgd Coss VGS, Gate-Source Voltage [V] Capacitances [pF] 4000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 15A 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] FDP15N65 / FDPF15N65 Rev. B 0 10 20 30 40 50 QG, Total Gate Charge [nC] 3 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 3.0 RDS(ON), (Normalized) RDS(ON), (Normalized) Drain-Source On-Resistance Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 0.8 -100 -50 0 50 100 150 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.0 0.0 -100 -100 200 * Notes : * Notes 1. VGS: = 10 V 1.2.VIGS==5.5 10 V A D 2. ID = 7.5 A 0.5 0.5 o TJ, Junction Temperature [ C] -50 -50 00 50 50 100 100 150 150 Figure 9-1. Safe Operating Area for FDP15N65 Figure 9-2. Safe Operating Area for FDPF15N65 2 10 2 10 10 μs 10 10 μs 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 0 10 ID, Drain Current [A] ID, Drain Current [A] 100 μs 1 ms 1 * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C 100 μs 1 10 1 ms 10 ms Operation in This Area is Limited by R DS(on) 0 10 -1 100 ms DC * Notes : o 1. TC = 25 C 10 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 10 200 200 o JunctionTemperature Temperature [[oC] C] TTJJ,,Junction 0 1 10 2 10 -2 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 18 ID, Drain Current [A] 15 12 9 6 3 0 25 50 75 100 125 150 o TC, Case Temperature [ C] FDP15N65 / FDPF15N65 Rev. B 4 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP15N65 / FDPF15N65 650V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP15N65 10 0 (t), Thermal Response D = 0 .5 10 0 .2 -1 0 .1 PDM θJC 0 .0 5 -2 * N o te s : t2 1 . Z θ J C ( t) = 0 .5 s in g le p u ls e Z 10 t1 0 .0 2 0 .0 1 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FDPF15N65 0 0 .2 0 .1 0 .0 5 10 -1 PDM t1 0 .0 2 0 .0 1 * N o te s : t2 1 . Z θ J C ( t) = 3 .3 θJC (t), Thermal Response D = 0 .5 10 o C /W M a x . Z 2 . D u ty F a c to r , D = t 1 /t 2 10 10 3 . T J M - T C = P D M * Z θ J C ( t) s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FDP15N65 / FDPF15N65 Rev. B 5 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP15N65 / FDPF15N65 Rev. B 6 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP15N65 / FDPF15N65 Rev. B 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FDP15N65 / FDPF15N65 Rev. B 8 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP15N65 / FDPF15N65 Rev. B 9 www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET Mechanical Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I26 10 FDP15N65 / FDPF15N65 Rev. B www.fairchildsemi.com FDP15N65 / FDPF15N65 650V N-Channel MOSFET tm