Rohm BCX70K Npn small signal transistor Datasheet

NPN small signal transistor
BCX70J, K
Dimensions (Unit : mm)
Features
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX71.
2.9
0.4
(3)
Package
1.3
2.4
Packaging specifications
Type
0.95
0.45
0.2Min.
BCX70J,K
Taping
Code
T116
Basic ordering unit (pieces)
3000
(2)
(1)
0.95 0.95
0.15
1.9
(1)Emitter
BCX70J, K
(2)Base
(3)Collector
Each lead has same dimensions
Abbreviated symbol : GAJ (BCX70J)
GAK (BCX70K)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
45
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.2
A
0.2
W
Collector power dissipation
PC
0.35
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
∗
∗
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Collector-emitter breakdown voltage BVCEO
45
−
−
V
IC= 2mA
BVEBO
5
−
−
V
IC= 10μA
Collector-emitter cutoff current
ICES
−
−
0.1
μA
VCE= 45V
Emitter-base cutoff current
IEBO
−
−
0.1
μA
VEB= 4V
VCE(sat)1
−
−
0.35
V
IC/IB= 10mA/ 0.25mA
VCE(sat)2
−
−
0.55
V
IC/IB= 50mA/ 1.25mA
VBE(sat)1
−
−
0.85
V
IC/IB= 10mA/ 0.25mA
VBE(sat)2
−
−
1.05
V
IC/IB= 50mA/ 1.25mA
VBE(on)
0.55
−
0.75
V
hFE1
250
−
630
hFE2
90
−
−
fT
125
−
−
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Transition frequency
Unit
−
MHz
Conditions
VCE= 5V, IC= 2mA
VCE= 5V, IC= 2mA
VCE= 5V, IC= 50mA
VCE= 5V, IE= 10mA, f=100MHz
Collector output capacitance
Cob
−
−
4.5
pF
VCB= 10V, f=1MHz, IE=0A
Noise figure
NF
−
−
6
dB
VCE= 5V, IC= 200μA, f=1kHz,Rg=2kΩ
Collector-base cutoff current
ICBO
−
−
20
μA
VCB= 45V, Ta=150°C
This parts are classified into the categories below and given hFE item.
Part. No
BCX70J
BCX70K
hFE1
250 to 460 380 to 630
hFE2
90 or more 125 or more
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/2
2011.11 - Rev.B
Data Sheet
BCX70J, K
Electrical characteristics
10
COLLECTOR CURRENT : IC (mA)
Ta=125ºC
75ºC
25ºC
-55ºC
1
IB=300uA
IB=250uA
-80
IB=200uA
IB=150uA
IB=100uA
-40
100
VCE=5V
3V
1V
IB=50uA
IB=0A
0.2
0.4
0.6
0.8
1
0
BASE TO EMITTER VOLTAGE : VBE (V)
-2
Ta=125ºC
75ºC
25ºC
-55ºC
100
10
1
10
100
1000
-6
-8
Ta=25ºC
IC/IB=40/1
20/1
10/1
0.1
0.01
0.1
1
10
100
TRANSITION FREQUENCY : fT (MHz)
IC/IB=40/1
Ta=-55ºC
25ºC
75ºC
125ºC
-0.1
-10
-100
1000
-1000
COLLECTOR CURRENT : IC (mA)
Fig7. Base Saturation Voltage
vs. Collector Current
Ta=25°C
VCE=6V
500
200
100
50
−0.5 −1
−2
−5
−10 −20
Fig.8 Gain bandwidth product vs.
emitter current
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c 2011 ROHM Co., Ltd. All rights reserved.
○
−50 −100
EMITTER CURRENT : IE (mA)
2/2
1000
IC/IB=40/1
Ta=125ºC
75ºC
25ºC
-55ºC
0.1
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig5. Collector Saturation Voltage
vs. Collector Current (I)
-10
100
1
COLLECTOR CURRENT : IC (mA)
Fig4. DC Current Gain vs.
Collector Current (II)
-1
10
COLLECTOR CURRENT : IC (mA)
Fig3. DC Current Gain vs.
Collector Current (I)
1
COLLECTOR CURRENT : IC (mA)
-1
1
-10
Fig2. Grounded Emitter Output
Characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V)
VCE=-5V
-4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig1. Grounded Emitter Propagation
Characteristics
1000
10
0
1.2
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V)
0
DC CURRENT GAIN : hFE
Ta=25ºC
-120
0.1
BASE SATURATION VOLTAGE : VBE(sat) (V)
1000
IB=500uA
450uA
400uA
350uA
Fig6. Collector Saturation Voltage
vs. Collector Current (II)
20
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR CURRENT : IC (mA)
Ta=25ºC
VCE=5V
DC CURRENT GAIN : hFE
-160
100
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
5
2
Co
b
1
0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2011.11 - Rev.B
Notice
Notes
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R1120A