APTGF660U60D4 Single switch NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 5 2 2 1 Features • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 600 825 660 1100 ±20 2770 Tj = 125°C 1100A@520V TC = 25°C TC = 80°C TC = 25°C Unit V A January, 2005 3 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF660U60D4 – Rev 0 4 5 VCES = 600V IC = 660A @ Tc = 80°C APTGF660U60D4 All ratings @ Tj = 25°C unless otherwise specified ICES Test Conditions Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 660A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 800A R G = 4.7Ω Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Symbol Characteristic Diode Forward Voltage Qrr Reverse Recovery Charge Test Conditions IF = 800A VGE = 0V IF = 800A VR = 300V di/dt =4000A/µs Min Typ 36 3.2 210 Min IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature M6 M4 APT website – http://www.advancedpower.com 2500 -40 -40 -40 3 1 Typ V 6.5 400 V nA Max Unit nF ns 420 83 250 93 450 95 18 25 87 VISOL TJ TSTG TC 2.45 86 Tj = 125°C Junction to Case Package Weight µA mA Tj = 25°C Tj = 125°C Tj = 25°C RthJC Wt 500 4.5 1 1 1.95 2.2 5.5 Typ 1.25 1.2 52 Symbol Characteristic Mounting torque Unit Min Thermal and package characteristics Torque Max Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 800A R G = 4.7Ω Reverse diode ratings and characteristics VF Typ VGE = 0V VCE = 600V Zero Gate Voltage Collector Current VCE(on) Min ns mJ Max 1.6 Unit V µC Max 0.045 0.085 Unit °C/W V 150 125 125 5 2 420 January, 2005 Symbol Characteristic °C N.m g 2-3 APTGF660U60D4 – Rev 0 Electrical Characteristics APTGF660U60D4 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGF660U60D4 – Rev 0 January, 2005 Package outline