MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB 2 3 1 1 MBR20HxxCT PIN 1 PIN 2 PIN 3 CASE 2 MBRF20HxxCT PIN 1 PIN 2 PIN 3 TO-263AB K 2 1 MBRB20HxxCT PIN 1 PIN 2 K HEATSINK 3 • • • • • • • • Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 35 V to 60 V IFSM 150 A VF 0.55 V, 0.61 V IR 100 μA TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode Revision: 12-Jun-13 Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum Document Number: 88787 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT www.vishay.com Vishay General Semiconductor MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Working peak reverse voltage VRWM 35 45 50 60 Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current (fig. 1) total device per diode A 10 EAS 80 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz IRRM 1.0 0.5 Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 20 10 Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 20 IF(AV) Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k UNIT mJ A mJ VC 25 kV dV/dt 10 000 V/μs TJ, TSTG - 65 to 175 °C VAC 1500 V ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode VF (1) Maximum reverse current per diode IR (2) MBR20H35CT MBR20H45CT TEST CONDITIONS TYP. MAX. MBR20H50CT MBR20H60CT TYP. MAX. IF = 10 A TC = 25 °C - 0.63 - 0.71 IF = 10 A TC = 125 °C 0.49 0.55 0.57 0.61 IF = 20 A TC = 25 °C - 0.75 - 0.85 IF = 20 A TC = 125 °C Rated VR UNIT V 0.62 0.68 0.68 0.71 TJ = 25 °C - 100 - 100 μA TJ = 125 °C 4.0 12 2.0 12 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical resistance, junction to case per diode SYMBOL MBR MBRF MBRB UNIT RJC 2.0 4.0 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB MBR20H45CT-E3/45 PREFERRED P/N 1.85 45 50/tube DELIVERY MODE Tube ITO-220AB MBRF20H45CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB20H45CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB20H45CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR20H45CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF20H45CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB MBRB20H45CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB20H45CTHE3/81 (1) 1.35 81 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 12-Jun-13 Document Number: 88787 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Average Forward Current (A) MBR, MBRB 20 15 MBRF 10 5 Instantaneous Reverse Leakage Current (mA) 25 10 1 TJ = 125 °C 0.1 MBR20H35CT, MBR20H45CT MBR20H50CT, MBR20H60CT 0.01 0.001 TJ = 25 °C 0.0001 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 1 - Forward Current Derating Curve (Total) 175 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave 150 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 125 100 75 50 25 MBR20H35CT, MBR20H45CT MBR20H50CT, MBR20H60CT 100 10 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 10 TJ = 150 °C 1 TJ = 25 °C TJ = 125 °C 0.1 MBR20H35CT, MBR20H45CT MBR20H50CT, MBR20H60CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 12-Jun-13 Document Number: 88787 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.191 (4.85) 0.171 (4.35) 0.035 (0.89) 0.025 (0.64) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) Revision: 12-Jun-13 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB 0.245 (6.22) MIN. 3 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 2 7° REF. 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 0.671 (17.04) 0.651 (16.54) PIN 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.076 (1.93) REF. 45° REF. 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 88787 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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