AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8808 is Pb-free (meets ROHS & Sony 259 specifications). AO8808L is a Green Product ordering option. AO8808 and AO8808L are electrically identical. VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 D1 8 7 6 5 D2 D2 S2 S2 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 V 30 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 8 TA=25°C Power Dissipation A S2 RθJA RθJL Typ 73 96 63 Max 90 125 75 Units °C/W °C/W °C/W AO8808 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 10 TJ=55°C 25 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, V DS=5V 30 100 nA 1 V 10.6 14 14.2 17 VGS=4.5V, I D=5A 12.2 15 mΩ VGS=2.5V, I D=4A 16.1 20 mΩ VGS=1.8V, I D=3A 23.2 28 mΩ TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qrr VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=10V, I D=8A Gate Drain Charge tD(on) VGS=10V, VDS=10V, RL=1.3Ω, RGEN=3Ω A 36 0.73 1 V 2.4 A 1810 pF 232 pF 200 pF 1.6 Ω 19.8 nC 1.8 nC 5 nC 3.3 ns 5.9 ns 44 ns 7.7 ns IF=8A, dI/dt=100A/µs 22 IF=8A, dI/dt=100A/µs 9.8 ns nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Alpha & Omega Semiconductor, Ltd. mΩ S A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. µA 0.75 VGS=10V, I D=8A IS Units V VDS=16V, VGS=0V IGSS Static Drain-Source On-Resistance Max 20 VGS(th) RDS(ON) Typ AO8808 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V VDS=5V 2V 25 30 20 ID(A) ID (A) 25 20 15 15 10 125°C 10 VGS=1.5V 5 5 0 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.6 VGS=4.5V ID=5A Normalized On-Resistance VGS=1.8V 25 RDS(ON) (mΩ) 2.5 20 VGS=2.5V VGS=4.5V 15 10 VGS=10V VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 5 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 35 1.0E+00 125° ID=5A 30 1.0E-01 25 20 IS (A) RDS(ON) (mΩ) 25 125°C 15 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO8808 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 0 Crss 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 100µs 1s 0 1 TJ(Max)=150°C TA=25°C DC 1 20 10 10s 0.1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 30 1m 1.0 0.1 15 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 40 10m ZθJA Normalized Transient Thermal Resistance 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000