AP2302N-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Lower Gate Charge
BVDSS
20V
RDS(ON)
64mΩ
ID
▼ Surface Mount Package
3.2A
S
▼ RoHS Compliant & Halogen-Free
SOT-23S
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+12
V
3
3.2
A
3
2.6
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
10
A
PD@TA=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
125
℃/W
1
201112091
AP2302N-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
VGS=4.5V, ID=3A
-
-
64
mΩ
VGS=2.5V, ID=2A
-
-
100
mΩ
0.3
0.6
1.2
V
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=3A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
6.5
10.5
nC
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
9
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=5V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
480
pF
Coss
Output Capacitance
VDS=10V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
-
-
VGS=0V, ID=250uA
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=0.83A, VGS=0V
Max. Units
1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 5s ; 350℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2302N-HF
20
30
o
5.0V
4.5V
3.5V
o
T A =150 C
2.5V
20
5.0V
4.5V
3.5V
2.5V
16
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
V G =2.0V
10
12
V G =2.0V
8
4
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
1.8
50
I D =2A
T A =25 o C
I D =3A
V G =4.5V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
40
1.4
1.2
1.0
30
0.8
0.6
20
0
1
2
3
4
5
-50
6
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2
I D =250uA
1.6
IS (A)
T j =150 o C
Normalized VGS(th)(V)
6
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2302N-HF
f=1.0MHz
500
I D =3A
V DS =10V
400
6
C (pF)
VGS , Gate to Source Voltage (V)
8
4
C iss
300
200
2
100
C oss
C rss
0
0
0
2
4
6
8
10
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
DUTY=0.5
10
ID (A)
Operation in this
area limited by
RDS(ON)
100us
1
1ms
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
Rthja = 350℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
5
VG
ID , Drain Current (A)
4
QG
4.5V
3
QGS
QGD
2
1
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4