Diodes DMN2215UDM-7 Dual n-channel enhancement mode field effect transistor Datasheet

DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
NEW PRODUCT
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Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
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100mΩ @VGS = 4.5V, ID = 2.5A
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140mΩ @VGS = 2.5V, ID = 1.5A
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215mΩ @VGS = 1.8V, ID = 1A
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV HBM
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
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G1
D1
S2
S1
G2
D2
SOT-26
ESD PROTECTED TO 2kV
Maximum Ratings
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 85°C
Drain Current (Note 1)
Pulsed Drain Current ( Note 4)
Thermal Characteristics
ID
IDM
Value
20
±12
2.0
1.4
7.0
Units
V
V
Value
650
192
-55 to +150
Units
mW
°C/W
°C
A
A
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
TOP VIEW
Schematic and Pin Configuration
Symbol
PD
RθJA
TJ, TSTG
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width ≤ 10μs, duty cycle ≤ 1%.
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2215UDM
NEW PRODUCT
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±10
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.6
⎯
1.0
V
Static Drain-Source On-Resistance
RDS (ON)
⎯
80
105
165
100
140
215
mΩ
VDS = VCS, ID = 250μA
VGS = 4.5V, ID = 2.5A
VGS = 2.5V, ID = 1.5A
|Yfs|
VSD
⎯
⎯
5
0.73
⎯
1.1
S
V
VGS = 1.8V, ID = 1.0A
VDS =5V, ID = 2.4A
VGS = 0V, IS = 1.05A
Ciss
Coss
Crss
td(on)
tr
td(off)
tt
⎯
⎯
⎯
⎯
⎯
⎯
⎯
188
44
30
8
3.8
19.6
8.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
ns
VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
IDSS
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Test Condition
5. Short duration pulse test used to minimize self-heating effect.
10
8
7
8
6
5
6
4
4
3
2
2
1
0
0
0
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
2 of 4
www.diodes.com
0.5
1
1.5
2
2.5
3
3.5
4
June 2008
© Diodes Incorporated
DMN2215UDM
1.8
1.6
RDS(ON) NORMALIZED
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
VGS = 2.5V
ID = 1.5A
VGS = 1.8V
0.1
VGS = 2.5V
VGS = 4.5V
VGS = 4.5V
ID = 2.5A
1.4
1.2
VGS = 1.8V
ID = 1.0A
1
0.8
0.01
0.01
0.1
1
ID, DRAIN-SOURCE CURRENT
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
-25 0
25
50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
1,000
f = 1MHz
0.8
ID = 250µA
C, TOTAL CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.6
-50
10
1
0.6
0.4
0.2
Ciss
100
Coss
Crss
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Temperature
10
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
20
10
IS, SOURCE CURRENT (A)
NEW PRODUCT
1
1
0.1
0.01
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2215UDM
Ordering Information
(Note 6)
Part Number
DMN2215UDM-7
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
NEW PRODUCT
Notes:
Case
SOT-26
22N
Date Code Key
Year
Code
Month
Code
2007
U
2008
V
Jan
1
Feb
2
2009
W
Mar
3
22N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
H
K
M
J
L
D
SOT-26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout
E
Z
E
C
G
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C
2.40
E
0.95
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
© Diodes Incorporated
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