HANBit HMF25664F4VP FLASH-ROM MODULE 2MByte (256K x 64-Bit) ,120PIN SMM,3.3V Part No. HMF25664F4VP GENERAL DESCRIPTION The HMF25664F4VPis a high-speed flash read only memory (FROM) module containing 262,144 words organized in an x64bit configuration. The module consists of four 256K x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible PIN ASSIGNMENT P1 FEATURES P2 PIN Symb ol PIN Symbol Vss DQ0 DQ1 1 2 3 Vcc DQ16 DQ17 31 32 33 Vss DQ48 DQ49 PIN Symb ol 31 32 33 1 2 3 Symb ol Vcc DQ32 DQ33 w Easy memory expansion 4 5 6 DQ34 DQ35 DQ36 34 35 36 DQ2 DQ3 DQ4 4 5 6 DQ18 DQ19 DQ20 34 35 36 DQ50 DQ51 DQ52 w Hardware reset pin(RESET#) 7 DQ37 37 DQ5 7 DQ21 37 DQ53 w FR4-PCB design 8 DQ38 38 DQ6 8 DQ22 38 DQ54 9 10 DQ39 Vcc 39 40 DQ7 Vss 9 10 DQ23 Vcc 39 40 DQ55 Vss 11 12 13 DQ40 DQ41 DQ42 41 42 43 DQ8 DQ9 DQ10 11 12 13 DQ24 DQ25 DQ26 41 42 43 DQ56 DQ57 DQ58 14 15 16 17 DQ43 DQ44 DQ45 DQ46 44 45 46 47 DQ11 DQ12 DQ13 DQ14 14 15 16 17 DQ27 DQ28 DQ29 DQ30 44 45 46 47 DQ59 DQ60 DQ61 DQ62 18 19 20 21 DQ47 Vcc A1 A2 48 49 50 51 DQ15 Vss A10 A11 18 19 20 21 DQ31 Vcc NC A0 48 49 50 51 DQ63 Vss NC /BANK0 22 23 24 25 26 A3 A4 A5 Vcc A6 52 53 54 55 56 A12 A13 A14 Vss A15 22 23 24 25 26 52 53 54 55 56 Vss /BYTE /WE3 Vss NC 27 A7 57 A17 27 57 NC 28 A8 58 NC 28 58 NC 29 A9 59 NC 29 59 NC 30 Vcc 60 Vss 30 A16 /WE1 /WE2 Vcc /OE /RES ET /WE0 /RY_B Y Vcc 60 Vss w Access time : 50, 55, 70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 50ns access -50 55ns access -55 70ns access -70 90ns access -90 120ns access -120 w Packages 120-pin SMM URL: www.hbe.co.kr REV.02(August,2002) F PIN 1 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ63 A0 – A17 64 18 A(0-17) DQ(0-15) /WE0 /WE /BYTE /OE U2 /CE RY-BY /Reset A(0-17) DQ(16-31) /WE1 /WE /BYTE /OE U3 /CE RY-BY /Reset A(0-17) DQ(32-47) /WE2 /WE /OE /BYTE /CE U1 RY-BY /Reset A(0-17) DQ(48-63) /WE3 /WE /OE /OE /BANK0 /CE RY_/BY RY-BY /BYTE U4 /Reset /RESET /BYTE URL: www.hbe.co.kr REV.02(August,2002) 2 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP TRUTH TABLE DQ8-DQ15 MODE /OE /CE /WE /RESET DQ0-DQ7 /BYTE=V IH STANDBY X Vcc± 0.3 X Vcc± 0.3 HIGH-Z HIGH-Z NOT SELECTED H L H H HIGH-Z HIGH-Z READ L L H H Dout Dout WRITE or ERASE H L L H Din Din NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to VCC+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55Oc to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional oper ation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for Regulated Voltages Range VCC 3.0V 3.6V Vcc for Full Voltages Range Vcc 2.7V 3.6V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS IL1 ±1.0 µA IL0 ±1.0 µA VIN=VSS to Vcc Input Load Current Vcc = Vcc max Output Leakage Current Vcc=Vcc max, V OUT= VSS to Vcc IOH = -2.0mA, Vcc = Vcc min VOH1 0.85VCC IOH = -100uA, Vcc = Vcc min VOH2 VCC – 0.4 Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2,3) /CE = VIL, /OE=VIH, ICC1 /CE = VIL, /OE=VIH Vcc Standby Current(3) /CE,/RESET= VCC ±0.3V Output High Voltage 0.45 V 7 12 mA ICC2 15 30 mA ICC3 0.2 5 mA 2.5 V Low Vcc Lock-Out Voltage VLKO 2.3 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. typical V CC is 3.0V. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL: www.hbe.co.kr REV.02(August,2002) 3 V HANbit Electronics Co., Ltd. HANBit HMF25664F4VP ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. Sector Erase Time - 0.7 15 Sec Byte Programming Time - 9 300 µs Chip Programming Time - 11 COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead Sec CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD TAVAV tRC Speed Options DESCRIPTION TEST SETUP Read Cycle Time UNIT 50R 55R 70 90 120 Min 50 55 70 90 120 ns Max 50 55 70 90 120 ns Max 50 55 70 90 120 ns TAVQV tACC Address to Output Delay /CE = VIL /OE = VIL TELQV tCE Chip Enable to Output Delay /OE = VIL TGLQV tOE Chip Enable to Output Delay Max 30 30 30 35 50 ns TEHQZ tDF Chip Enable to Output High -Z Max 25 25 25 30 30 ns TGHQZ tDF Max 25 25 25 30 30 ns TAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 0 0 0 0 ns Notes : Test Conditions Output Load : 1TTL gate Output Load Capacitance - 50R,55R,70 -30 pF - 90,120 -30pF Input rise and fall times : 5 ns Input pulse levels : 0.0V-3.0V Timing measurement reference level - Input : 1.5V - Output :1.5V URL: www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS UNIT Speed Options DESCRIPTION JEDEC STANDARD TAVAV tWC Write Cycle Time Min TAVWL tAS Address Setup Time Min TWLAX tAH Address Hold Time Min 45 45 45 45 50 ns TDVWH tDS Data Setup Time Min 45 45 45 45 50 ns TWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before write Min 0 ns 50R 55R 70 90 120 50 55 70 90 120 0 ns ns TGHWL tGHWL TELWL tCS /CE Setup Time Min 0 ns TWHEH tCH /CE Hold Time Min 0 ns TWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs 5 HANbit Electronics Co., Ltd. tVCS 35 35 35 35 50 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect oper ations URL: www.hbe.co.kr REV.02(August,2002) ns HANBit HMF25664F4VP u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS SPEED OPTION UNIT DESCRIPTION JEDEC STANDARD 50R 55R 70 90 120 tAVAV tWC Write Cycle Time Min 50 55 70 90 120 tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 45 45 50 ns tDVEH tDS Data Setup Time Min 35 35 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS /WE Setup Time Min 0 ns tEHWH tWH /WE Hold Time Min 0 ns tELEH tCP /CE Pulse Width Min tEHEL tCPH /CE Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 0.7 sec 0 35 35 35 ns 35 50 Notes : This does not include the preprogramming time. URL: www.hbe.co.kr REV.02(August,2002) 6 ns HANbit Electronics Co., Ltd. ns HANBit HMF25664F4VP u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP PACKAGE DIMENSIONS FRONT SIDE REAR SIDE URL: www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit HMF25664F4VP ORDERING INFORMATION Part Number Density Org. Package HMF25664F4VP-50 2MByte X 64 120 Pin-SMM HMF25664F4VP-55 2MByte X 64 HMF25664F4VP-70 2MByte HMF25664F4VP-90 HMF25664F4VP-120 Component Vcc SPEED 4EA 3.3V 50ns 120 Pin-SMM 4EA 3.3V 55ns X 64 120 Pin-SMM 4EA 3.3V 70ns 2MByte X 64 120 Pin-SMM 4EA 3.3V 90ns 2MByte X 64 120 Pin-SMM 4EA 3.3V 120ns Number P : PULL UP OF ALL SIGNAL (DATA LINE, ADDRESS LINE, CONTROLL SIGNAL LINE) URL: www.hbe.co.kr REV.02(August,2002) 12 HANbit Electronics Co., Ltd.