ON MBR745G Switchmodeâ ¢ power rectifier Datasheet

MBR735, MBR745
SWITCHMODE™
Power Rectifiers
Features and Benefits
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
Pb−Free Packages are Available*
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SCHOTTKY BARRIER
RECTIFIERS
7.5 AMPERES
35 and 45 VOLTS
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
1, 4
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for
10 Seconds
ESD Rating:
Human Body Model 3B
Machine Model C
MARKING
DIAGRAM
4
TO−220AC
CASE 221B
STYLE 1
AY WWG
B7x5
KA
1
3
A
Y
WW
B7x5
x
KA
G
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Diode A Polarity
= Pb−Free Package
ORDERING INFORMATION
Device
MBR735
MBR735G
MBR745
MBR745G
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 8
1
Publication Order Number:
MBR735/D
MBR735, MBR745
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
MBR735
MBR745
Average Rectified Forward Current
(TC = 164°C)
Value
VRRM
VRWM
VR
Per Device
Unit
V
35
45
IF(AV)
A
7.5
Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C)
IFRM
7.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
dv/dt
10,000
V/ms
Voltage Rate of Change (Rated VR)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
Characteristic
RqJC
3.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
RqJA
60
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
Min
Typ
Max
−
−
−
0.48
0.61
0.68
0.57
0.72
0.84
−
−
10
0.03
15
0.1
Unit
V
mA
MBR735, MBR745
10
IF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TJ = 25°C
100°C
1
175°C
125°C
150°C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
TJ = 25°C
10
100°C
125°C
175°C
1
150°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100
IR, REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TJ = 150°C
10
125°C
100°C
1.0
75°C
0.1
0.01
0.001
25°C
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
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3
50
MBR735, MBR745
14
dc
12
IF(AV), AVERAGE FORWARD
CURRENT (A)
IF(AV), AVERAGE FORWARD
CURRENT (A)
14
10
SQUARE
8
6
4
2
12
10
8
145
150
155
160
165
170
175
dc
6
4
SQUARE
WAVE
2
0
0
140
180
0
25
50
TC, CASE TEMPERATURE (°C)
100
125
150
175
Figure 5. Current Derating, Ambient, Per Leg
1000
TJ = 25°C
TJ = 25°C
f = 1 MHz
900
C, CAPACITANCE (nF)
PF(AV), AVERAGE POWER DISSIPATION (W)
75
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
dc
SQUARE
WAVE
dc
800
700
600
500
400
300
200
100
0
2
4
6
8
0
10 12 14 16 18 20 22 24 26 28 30
0
10
20
30
40
IF(AV), AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 6. Forward Power Dissipation
Figure 7. Typical Capacitance
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4
50
MBR735, MBR745
PACKAGE DIMENSIONS
TO−220
PLASTIC
CASE 221B−04
ISSUE E
C
B
Q
F
S
T
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
3
U
H
K
L
R
D
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
J
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
CATHODE
N/A
ANODE
CATHODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR735/D
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