BCP060T HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm) The BeRex BCP060T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 600 micron gate width making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP060T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES 28 dBm Typical Output Power 12 dB Typical Gain @ 12 GHz 0.25 X 600 Micron Recessed Gate APPLICATIONS Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) NF 50 Ohm Noise Figure (Vds=2V, Idss=15 mA) Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V) TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz MIN. TYPICAL 27.0 28.0 28.5 12.0 9.0 55 55 11.0 12 GHz MAX. dBm dB % 1.34 120 180 dB 240 240 -2.5 UNIT mA mS -1.1 -0.5 V -12 V BVgd Drain Breakdown Voltage (Ig = 0.6 mA, source open) -15 BVgs Source Breakdown Voltage (Ig = 0.6 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 75 °C/W www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP060T ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) NF 50 Ohm Noise Figure (Vds=2V, Idss=15 mA) Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V) TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz MIN. 11.0 12 GHz TYPICAL MAX. 27.5 27.0 12.5 9.5 55 50 dBm dB % 1.34 120 dB 180 240 240 - 2.5 UNIT mA mS -1.1 - 0.5 V -12 V BVgd Drain Breakdown Voltage (Ig = 0.6 mA, source open) -15 BVgs Source Breakdown Voltage (Ig = 0.6 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 75 °C/W MAXIMUM RATING (Ta = 25° C) SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12 V -6 V Idss 30 mA 25 dBm 175° C -60° C - 150° C 2.6 W CONTINUOUS 8V -3 V Idss 10 mA @3dB Compression 150° C -60° C - 150° C 2.2 W Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device. www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP060T PIN_POUT/Gain, PAE (12 GHz) Frequency = 12GHz Vds= 8 V, Ids = 50% Idss (Tuned for Power) Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) PIN_POUT/Gain, PAE (18 GHz) Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) www.berex.com Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP060T S-PARAMETER (Vds = 8V, Ids = 50% Idss) FREQ. [GHZ] S11 [MAG] S11 [ANG.] S21 [MAG] S21 [ANG.] S12 [MAG] S12 [ANG.] S22 [MAG] S22 [ANG.] 1 0.92 -57.91 13.83 142.64 0.017 62.75 0.45 -30.63 2 0.83 -100.13 10.45 117.12 0.032 43.42 0.34 -49.55 3 0.79 -129.58 7.98 99.76 0.047 34.74 0.25 -62.90 4 0.77 -150.61 6.32 86.33 0.061 28.79 0.19 -72.26 5 0.77 -165.65 5.18 75.24 0.073 27.32 0.15 -86.36 6 0.77 -178.11 4.35 65.56 0.084 26.36 0.13 -101.81 7 0.78 172.13 3.69 56.72 0.094 25.99 0.12 -123.94 8 0.79 163.81 3.25 48.59 0.103 25.03 0.12 -137.66 9 0.80 156.81 2.88 41.33 0.108 23.59 0.12 -155.22 10 0.81 150.09 2.58 34.01 0.114 24.54 0.14 -169.25 11 0.82 143.11 2.34 26.33 0.120 23.14 0.16 178.07 12 0.83 136.61 2.12 18.59 0.124 22.92 0.19 168.01 13 0.85 130.15 1.94 11.44 0.130 19.85 0.22 157.74 14 0.86 123.54 1.77 3.60 0.134 16.06 0.25 148.31 15 0.88 117.87 1.60 -4.01 0.139 14.39 0.30 140.13 16 0.89 112.39 1.45 -11.27 0.144 10.53 0.35 132.31 17 0.90 106.79 1.29 -19.37 0.148 7.58 0.41 126.29 18 0.91 103.05 1.13 -26.14 0.153 6.07 0.46 120.85 19 0.92 100.04 1.00 -32.93 0.155 3.45 0.51 115.68 20 0.92 97.13 0.88 -38.54 0.156 0.94 0.57 111.97 21 0.93 96.22 0.76 -43.13 0.150 0.17 0.61 109.56 22 0.93 96.46 0.66 -46.19 0.149 0.71 0.65 107.33 23 0.92 96.55 0.57 -49.34 0.147 -0.34 0.68 106.11 24 0.92 97.66 0.51 -51.56 0.145 -0.02 0.71 106.08 2.76 0.74 105.60 3.92 0.76 106.41 25 0.94 98.95 0.46 -53.03 0.144 26 0.93 99.53 0.41 -54.01 0.145 Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below. www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP060T Wire Bonding Information Using 1 mil. diameter, Au bonding wires. 1. Gate to input transmission line - Length and Height : 600 µm x 250 µm - Number of wire(s): 1 2. Drain to output transmission line - Length and Height : 400 µm x 250 µm - Number of wire(s) : 1 3. Source to ground plate - Length and Height : 250 µm x 300 µm - Number of wire(s) : 4 DISCLAIMER BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE EXPRESS WRITTEN APPROVAL OF BEREX. 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011