CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS39-4B series types are hermetically sealed silicon controlled rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CS39 SYMBOL -4B Peak Repetitive Off-State Voltage VDRM, VRRM 200 RMS On-State Current (TC=90°C) IT(RMS) CS39 -4D 400 CS39 -4M 600 CS39 -4N 800 UNITS V 4.0 A 35 A 4.5 A2s PGM PG(AV) IGM 3.0 W 0.2 W 1.2 A -40 to +125 °C Thermal Resistance TJ Tstg ΘJA Thermal Resistance ΘJC Peak One Cycle Surge Current (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power Dissipation (tp=10μs) Average Gate Power Dissipation Peak Gate Current (tp=10μs) Operating Junction Temperature Storage Temperature ITSM I2t ELECTRICAL SYMBOL IDRM, IRRM IDRM, IRRM CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN Rated VDRM, VRRM, RGK=1.0KΩ Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IGT IH VD=12V, RL=10Ω IT=50mA, RGK=1.0KΩ VGT 0.2 VTM VD=12V, RL=10Ω VD=300V, RGK=1.0KΩ, TC=125°C IT=8.0A, tp=380μs dv/dt VD=⅔VDRM, RGK=1.0KΩ, TC=125°C 10 VGD -65 to +150 °C 180 °C/W 10 °C/W TYP MAX 5.0 UNITS μA 200 μA 38 200 μA 0.25 5.0 mA 0.55 0.8 V V 1.6 1.95 V V/μs R3 (19-September 2012) CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 800 VOLTS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Gate 3) Anode MARKING: FULL PART NUMBER R3 (19-September 2012) w w w. c e n t r a l s e m i . c o m