EIC BAV20 Switching diode Datasheet

BAV19 ~ BAV21
SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
FEATURES :
• switching speed: max. 50 ns
• For general purpose
• This diode is also available in other case styles
including: the the MiniMELF case with the type
designation BAV101 to BAV103, the SOT-23 case
with the type designation BAS19 to BAS21
* Pb / RoHS Free
1.00 (25.4)
min.
0.079(2.0 )max.
0.150 (3.8)
max.
Cathode
Mark
1.00 (25.4)
min.
0.020 (0.52)max.
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
Parameter
Symbol
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Rectified Current (Average)
Half Wave Rectification with Resist. Load
Maximum Continuous Current
25 °C ambient temperature unless otherwise specified.)
VRM
IF(AV)
200
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
V
V
mA
IF
250
mA
PD
500
mW
IFRM
625
mA
Maximum Power Dissipation (1)
(1)
Unit
120
200
250
100
150
200
VRRM
(1)
Maximum Repetitive Peak Forward Current
Value
IFSM
1.0
A
TJ
175
°C
TS
-65 to + 175
°C
(1)
Storage Temperature Range (1)
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Reverse Current
Symbol
BAV19
BAV20
BAV21
IR
VF
Forward Voltage
Diode Capacitance
Cd
Reverse Recovery Time
Trr
Page 1 of 2
Test Condition
VR = 100 V
VR = 150 V
VR = 200 V
IF = 100 mA
f = 1MHz ; VR = 0
IF = 30mA , IR = 30mA
IRR = 3mA , RL = 100 Ω
Min.
Typ.
Max.
-
1.5
100
100
100
1.0
-
-
-
50
Unit
nA
V
pF
ns
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAV19 ~ BAV21 )
FIG. 1 ADMISSIBLE FORWARD CURRENT
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
Continuous
Current, IF
200
Forward Current , IF (mA)
FORWARD OUTPUT CURRENT, mA
250
150
Average
Current, I(AV)
100
100
10
0.1
50
0
0.01
0
100
200
0
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
0.8
1.2
1.4
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
1.6
103
VR = VRmax
Reverse Current , IR (µA)
1.5
Diode Capacitance , Cd (pF)
0.4
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
1.4
f = 1MHz;
TJ = 25°C
1.3
1.2
102
10
1
1.1
10-1
1.0
10-2
0.9
0
10
Reverse Voltage , VR (V)
Page 2 of 2
TJ = 25°C
1
20
0
100
200
Junction Temperature , Ta (°C)
Rev. 02 : March 25, 2005
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