Jiangsu B5818W-SOD-123 Schottky barrier diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B5818W
SOD-123
SCHOTTKY BARRIER DIODE
FEATURES
PD:
1. 05
Power dissipation
450
mW (Tamb=25℃)
2. 70
3. 70
0. 55
1. 6
Collector current
1
A
IF:
Collector-base voltage
30
V
VR:
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
MARKING: SK
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Symbol
unless otherwise specified)
Test
conditions
V(BR)
IR= 1mA
Reverse voltage leakage current
IR
VR=20V
Forward voltage
VF
Diode capacitance
CD
MIN
MAX
30
V
1
IF=1A
0.55
IF=3A
0.875
VR=4V, f=1MHz
UNIT
110
mA
V
pF
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