Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1023 Features • High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz • Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz • Hermetic, Metal/Beryllia Stripline Package • Impedance Matched to 25 Ω for Push-Pull Configurations Description The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics. This MMIC is designed for use in a push-pull configuration in a 25␣ Ω system. The MSA-1023 can also be used as a single-ended amplifier in a 50␣ Ω system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Push-Pull Biasing Configuration R bias VCC > 20 V RFC C block 4 C block MSA 1 IN 50 Ω 3 2 Vd = 15 V 4 1 50 Ω OUT 3 MSA C block 2 C block RFC VCC > 20 V R bias 5965-9554E 6-446 230 mil BeO Flange Package MSA-1023 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 425 mA 7.0 W +25 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 15°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 66.7 mW/°C for TC > 95°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 325 mA, ZO = 25 Ω GP Power Gain (|S21| 2) ∆GP Gain Flatness f3 dB 3 dB Bandwidth[2] VSWR Input VSWR Units Min. f = 1.0 GHz dB 7.5 f = 0.1 to 2.0 GHz dB Typ. Max. 8.5 9.5 ± 0.6 GHz 2.5 f = 0.1 to 2.0 GHz 2.0:1 Output VSWR f = 0.1 to 2.0 GHz NF 25 Ω Noise Figure f = 1.0 GHz 2.8:1 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm IP3 Third Order Intercept Point f = 1.0 GHz dBm tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient dB V mV/°C 7.0 25.0 27.0 37.0 250 13.5 15.0 –18.0 Notes: 1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz gain (G P). 6-447 16.5 MSA-1023 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 325 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.001 0.005 0.010 0.025 0.050 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 .40 .51 .52 .52 .52 .53 .53 .51 .48 .45 .42 .38 .35 .34 .36 .39 .51 .60 –121 –167 –174 –178 179 176 172 164 157 151 146 144 145 149 152 153 148 133 15.3 8.5 7.5 7.2 7.1 7.0 7.0 7.0 7.0 7.0 7.0 6.9 6.8 6.6 6.3 5.9 4.6 3.0 5.85 2.67 2.36 2.28 2.26 2.25 2.25 2.24 2.24 2.23 2.23 2.22 2.20 2.15 2.07 1.97 1.69 1.41 149 156 166 172 173 170 163 146 130 113 95 78 61 44 19 11 –24 –57 –17.9 –15.9 –15.8 –15.8 –15.8 –15.8 –15.8 –15.8 –16.0 –16.1 –16.2 –16.4 –16.7 –17.0 –17.3 –17.7 –18.3 –17.9 .128 .160 .162 .162 .161 .161 .161 .161 .159 .157 .155 .151 .146 .141 .136 .130 .121 .127 22 6 3 1 –1 –3 –5 –11 –16 –21 –26 –31 –36 –41 –45 –49 –52 –57 .42 .45 .45 .45 .45 .45 .46 .46 .45 .44 .44 .44 .45 .46 .49 .62 .52 .70 –99 –161 –171 –177 –179 179 174 170 165 161 157 155 154 153 150 148 140 128 0.69 1.05 1.16 1.20 1.21 1.21 1.21 1.22 1.23 1.24 1.24 1.24 1.24 1.22 1.18 1.13 .91 .59 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 400 0.5 GHz 8 Id (mA) 1.0 GHz 2.0 GHz 4 28 100 0 18 20 22 24 26 28 30 32 0 2 4 6 8 P1 dB 24 20 150 10 200 250 300 Vd (V) POWER OUT (dBm) 32 10 30 8 350 400 I d (mA) Figure 2. Device Current vs. Voltage. Figure 1. Typical Gain vs. Power Out, ZO = 25°Ω, Id = 325 mA. Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept Point vs. Current, ZO=25Ω, f = 1.0 GHz. 6 ZO = 25 Ω 5 28 4 26 1.0 GHz ZO = 50 Ω 6 VSWR 0.5 GHz GAIN (dB) P1 dB (dBm) IP3 200 1.5 GHz 2 4 24 Input ZO = 50 Ω 3 2 1.0 GHz, 4.0 GHz 22 2.0 GHz 20 –50 36 32 6 0 16 TC = –50°C P1 dB (dBm) GAIN (dB) 300 40 TC = +100°C TC = +25°C IP3 (dBm) 10 +25 +100 TEMPERATURE (°C) Figure 4. Output Power at 1 dB Gain Compression vs. Temperature, ZO = 25 Ω, Id = 325 mA. 2 Id = 400 mA Id = 325 mA Id = 150 mA 0 0.1 0.2 0.3 1 0.5 1.0 2.0 FREQUENCY (GHz) Figure 5. Gain vs. Frequency, Id = 325 mA. 6-448 4.0 Output ZO = 50 Ω Input ZO = 25 Ω Output ZO = 25 Ω 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 FREQUENCY (GHz) Figure 6. VSWR vs. Frequency, Id = 325 mA. 230 mil BeO Flange Package .725 ± .030 18.42 ± .76 4 GROUND .800 RF 20.32 INPUT RF OUTPUT AND BIAS .562 14.27 3 1 .120 3.05 .130 3.30 GROUND 2 .130 ± .010 3.30 ± .25 .004 ± .002 .10 ± .05 .050 1.27 .230 5.84 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .060 1.52 6-449