AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDx-GJS Series • Feature: 1. Surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 3.2 x 2.8 x 1.8 mm. 4. Qualified according to JEDEC moisture sensitivity Level 2. 5. Compatible to both IR reflow soldering and TTW soldering. • Package Dimension: Recommended Solder Pad V.3 Page: 1 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDx-GJS Series • Optical Characteristics: Part Number Chip Technology / Color BL-PDR-GJS-C10 GaP / • • • BIN L1 BIN L2 BIN M1 • BIN M2 Luminous Intensity @ If = 20mA Iv ( mcd ) 11.2 … 28.5 Red, 625 nm 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 28.5 … 71.5 BL-PDR-GJS-C20 • • • BIN M1 BIN M2 BIN N1 • BIN N2 BL-PDO-GJS-C10 • • • BIN L1 BIN L2 BIN M1 • BIN M2 BL-PDY-GJS-C10 • • • BIN L1 BIN L2 BIN M1 • BIN M2 BL-PDG-GJS-C20 • • • BIN L1 BIN L2 BIN M1 • BIN M2 28.5 … 35.5 35.5 … 45.0 45.0 … 56.0 56.0 … 71.5 GaP / 11.2 … 28.5 Orange, 605 nm 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 GaP / 11.2 … 28.5 Yellow, 587 nm 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 GaP / 11.2 … 28.5 Green, 570 nm 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 18.0 … 45.0 BL-PDG-GJS-C30 • • • BIN M1 BIN M2 BIN N1 • BIN N2 Forward voltage 18.0 … 22.4 22.4 … 28.5 28.5 … 35.5 35.5 … 45.0 Chip Type @ If=20 mA. 2.2 V (typ.); 2.6 V (max) Viewing angle at 50% Iv GaP 120° Reverse current, IR @ VR = 5V, (max) 100 µA V.3 Page: 2 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDx-GJS Series NOTE: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of ±11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. An optional Vf binning is also available upon request. Binning scheme is as per following table. • Absolute Maximum Ratings: Parameter Maximum Value DC forward current. 30 mA Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005) 500 mA Reverse voltage. 5 V 100 °C Operating temperature. -40 … +100 °C Storage temperature. -40 … +100 °C LED junction temperature. Power dissipation ( at room temperature ) • Unit 75 mW Vf Binning: Vf Bin @ 20mA Forward voltage (V) 01 1.55 … 1.85 02 1.85 … 2.15 03 2.15 … 2.45 04 2.45 … 2.60 V.3 Page: 3 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDx-GJS Series • Wavelength Grouping: Color Group Wavelength distribution (nm) BL-PDR; Red Full 620 – 635 BL-PDA; Amber Full 610 – 621 W 610 - 615 X 615 - 621 Full 600 – 612 W 600 - 603 X 603 - 606 Y 606 - 609 Z 609 - 612 Full 582 – 594 W 582 – 585 X 585 – 588 Y 588 - 591 Z 591 - 594 Full 564.5 – 576.5 W 564.5 – 567.5 X 567.5 – 570.5 Y 570.5 – 573.5 Z 573.5 – 576.5 BL-PDO; Orange BL-PDY; Yellow BL-PDG; Green Wavelength is measured with an accuracy of ±1 nm. V.3 Page: 4 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Gap DOMILED BL-PDx-GJS Series Typical electro-optical characteristics curves: Fig. 1 Relative luminous intensity vs. forward current. Fig. 2 Forward current vs. forward voltage. Forward Current vs. Forward Voltage 2.2 40 2 Forward Current (mA) Relative intensity. Normalized at 20 mA. Intensity vs. DC Forw ard Current 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 35 30 25 GaP 20 15 10 5 0.2 0 0 0 10 20 30 40 50 1.0 60 1.2 1.4 Fig. 3 Radiation pattern. 30° 20° 10° 1.6 1.8 2.0 2.2 2.4 2.6 Forward Voltage (V) FORW ARD CURRENT (m A) Fig. 4 Maximum forward current vs. temperature. 0° 1.0 35 30 40° 0.8 50° 0.6 60° 0.4 Forward Current, If 25 20 15 10 70° 0.2 5 80° 0 90° 0 0 10 20 30 40 50 60 70 80 Ambient Temperature V.3 Page: 5 of 7 90 100 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDx-GJS Series Fig. 5 Recommended IR-reflow Soldering Profile (acc. to IPC 9501) Fig. 6 Recommended TTW Soldering Profile (acc. to CECC 00802) V.3 Page: 6 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDx-GJS Series • Taping And Orientation: Reels come in quantity of 2000 units. Reel diameters is 180 mm . V.3 Page: 7 of 7