AT28C010 Mil Features • • • • • • • • • • Fast Read Access Time - 120 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation Low Power Dissipation 80 mA Active Current 300 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 104 or 105 Cycles Data Retention: 10 Years Single 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-Wide Pinout 1 Megabit (128K x 8) Paged CMOS E2PROM Description The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers (continued) Pin Configurations Pin Name Function A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect PGA Top View Military 44 LCC Top View AT28C010 Mil CERDIP, FLATPACK Top View 32 LCC Top View 0353C 2-243 Description (Continued) access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 µA. control timer. The end of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128-bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal Atmel’s 28C010 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 128bytes of E2PROM for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature Under Bias................. -55°C to +125°C Storage Temperature...................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ................... -0.6V to +6.25V All Output Voltages with Respect to Ground .............-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ................... -0.6V to +13.5V 2-244 AT28C010 Mil *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AT28C010 Mil Device Operation READ: The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either CE or OE is high. This dualline control gives designers flexibility in preventing bus contention in their system. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Once a byte write has been started it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. PAGE WRITE: The page write operation of the AT28C010 allows 1 to 128-bytes of data to be written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 127 additional bytes. Each successive byte must be written within 150 µs (tBLC) of the previous byte. If the tBLC limit is exceeded the AT28C010 will cease accepting data and commence the internal programming operation. All bytes during a page write operation must reside on the same page as defined by the state of the A7 - A16 inputs. For each WE high to low transition during the page write operation, A7 - A16 must be the same. The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. DATA POLLING: The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime during the write cycle. TOGGLE BIT: In addition to DATA Polling the AT28C010 provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6 will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during the write cycle. DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Atmel has incorporated both hardware and software features that will protect the memory against inadvertent writes. HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28C010 in the following ways: (a) VCC sense - if VCC is below 3.8V (typical) the write function is inhibited; (b) VCC power-on delay - once VCC has reached 3.8V the device will automatically time out 5 ms (typical) before allowing a write: (c) write inhibit holding any one of OE low, CE high or WE high inhibits write cycles; (d) noise filter - pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a write cycle. SOFTWARE DATA PROTECTION: A software controlled data protection feature has been implemented on the AT28C010. When enabled, the software data protection (SDP), will prevent inadvertent writes. The SDP feature may be enabled or disabled by the user; the AT28C010 is shipped from Atmel with SDP disabled. SDP is enabled by the host system issuing a series of three write commands; three specific bytes of data are written to three specific addresses (refer to Software Data Protection Algorithm). After writing the 3-byte command sequence and after tWC the entire AT28C010 will be protected against inadvertent write operations. It should be noted, that once protected the host may still perform a byte or page write to the AT28C010. This is done by preceding the data to be written by the same 3-byte command sequence used to enable SDP. Once set, SDP will remain active unless the disable command sequence is issued. Power transitions do not disable SDP and SDP will protect the AT28C010 during power-up and power-down conditions. All command sequences must conform to the page write timing specifications. The data in the enable and disable command sequences is not written to the device and the memory addresses used in the sequence may be written with data in either a byte or page write operation. After setting SDP, any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, read operations will effectively be polling operations. (continued) 2-245 Device Operation (Continued) DEVICE IDENTIFICATION: A n e x t r a 1 2 8 - b y t e s o f E2PROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 1FF80H to 1FFFFH the bytes may be written to or read from in the same manner as the regular memory array. OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6-byte software code. Please see Software Chip Erase application note for details. DC and AC Operating Range Operating Temperature (Case) Mil. AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 -55°C - 125°C -55°C - 125°C -55°C - 125°C -55°C - 125°C 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% VCC Power Supply Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN VIH (1) Write (2) Standby/Write Inhibit X X Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z High Z Notes: 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. DC Characteristics Symbol Parameter Condition Min Max Units ILI Input Load Current VIN = 0V to VCC + 1V 10 µA ILO Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1V 300 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC + 1V 3 mA ICC VCC Active Current f = 5 MHz; IOUT = 0 mA 80 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA VOH1 Output High Voltage IOH = -400 µA 2.4 V VOH2 Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V 4.2 V 2-246 AT28C010 Mil 2.0 V .45 V AT28C010 Mil AC Read Characteristics AT28C010-12 Symbol Parameter tACC Min AT28C010-15 Max Min Max AT28C010-20 Min Max AT28C010-25 Min Max Units Address to Output Delay 120 150 200 250 ns tCE (1) CE to Output Delay 120 150 200 250 ns tOE (2) OE to Output Delay 0 50 0 55 0 55 0 55 ns tDF (3, 4) CE or OE to Output Float 0 50 0 55 0 55 0 55 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 0 0 0 ns AC Read Waveforms (1, 2, 3, 4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC . 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. Input Test Waveforms and Measurement Level Output Test Load tR, tF < 5 ns Pin Capacitance (f = 1 MHz, T = 25°C) (1) Typ Max Units CIN 4 10 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: Conditions 1. This parameter is characterized and is not 100% tested. 2-247 AC Write Characteristics Symbol Parameter tAS, tOES Address, OE Set-up Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 100 ns tDS Data Set-up Time 50 ns tDH, tOEH Data, OE Hold Time 0 ns AC Write Waveforms WE Controlled CE Controlled 2-248 AT28C010 Mil Min Max Units AT28C010 Mil Page Mode Characteristics Symbol Parameter Min Max Units tWC Write Cycle Time 10 ms tAS Address Set-up Time 0 ns tAH Address Hold Time 50 ns tDS Data Set-up Time 50 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 100 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High 150 50 µs ns Page Mode Write Waveforms (1, 2) Notes: 1. A7 through A16 must specify the page address during each high to low transition of WE (or CE). 2. OE must be high only when WE and CE are both low. Chip Erase Waveforms tS = 5 µsec (min.) tW = tH = 10 msec (min.) VH = 12.0V ± 0.5V 2-249 Software Data Protection Enable Algorithm (1) Software Data Protection Disable Algorithm (1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 LOAD DATA 80 TO ADDRESS 5555 WRITES ENABLED (2) LOAD DATA AA TO ADDRESS 5555 LOAD DATA XX TO ANY ADDRESS (4) LOAD LAST BYTE TO LAST ADDRESS LOAD DATA 55 TO ADDRESS 2AAA ENTER DATA PROTECT STATE LOAD DATA 20 TO ADDRESS 5555 Notes: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. Write Protect state will be activated at end of write even if no other data is loaded. 3. Write Protect state will be deactivated at end of write period even if no other data is loaded. 4. 1 to 128-bytes of data are loaded. LOAD DATA XX TO ANY ADDRESS (4) EXIT DATA PROTECT STATE LOAD LAST BYTE TO LAST ADDRESS Software Protected Program Cycle Waveform (1, 2, 3) Notes: 1. A0 - A14 must conform to the addressing sequence for the first 3-bytes as shown above. 2. After the command sequence has been issued and a page write operation follows, the page address inputs (A7 - A16) must be the same for each high to low transition of WE (or CE). 2-250 AT28C010 Mil 3. OE must be high only when WE and CE are both low. (3) AT28C010 Mil Data Polling Characteristics (1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min Typ Max 10 ns 10 ns (2) tOE OE to Output Delay tWR Write Recovery Time Units ns 0 Notes: 1. These parameters are characterized and not 100% tested. ns 2. See AC Read Characteristics. Data Polling Waveforms Toggle Bit Characteristics (1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min Typ Max 10 ns 10 ns (2) tOE OE to Output Delay tOEHP OE High Pulse tWR Write Recovery Time Units ns 150 ns 0 ns Notes: 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics. Toggle Bit Waveforms (1, 2, 3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 2-251 Ordering Information (1) tACC ICC (mA) Ordering Code Package 0.3 AT28C010(E)-12DM/883 AT28C010(E)-12EM/883 AT28C010-12FM/883 AT28C010(E)-12LM/883 AT28C010(E)-12UM/883 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 80 0.3 AT28C010(E)-15DM/883 AT28C010(E)-15EM/883 AT28C010-15FM/883 AT28C010(E)-15LM/883 AT28C010(E)-15UM/883 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 200 80 0.3 AT28C010(E)-20DM/883 AT28C010(E)-20EM/883 AT28C010-20FM/883 AT28C010(E)-20LM/883 AT28C010(E)-20UM/883 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 250 80 0.3 AT28C010(E)-25DM/883 AT28C010(E)-25EM/883 AT28C010-25FM/883 AT28C010(E)-25LM/883 AT28C010(E)-25UM/883 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 120 80 0.3 5962-38267 07 MXX 5962-38267 07 MZX 5962-38267 07 MYX 5962-38267 07 MTX 32D6 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 150 80 0.3 5962-38267 05 MXX 5962-38267 05 MUX 5962-38267 05 MZX 5962-38267 05 MYX 5962-38267 05 MTX 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 200 80 0.3 5962-38267 03 MXX 5962-38267 03 MUX 5962-38267 03 MZX 5962-38267 03 MYX 5962-38267 03 MTX 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 250 80 0.3 5962-38267 01 MXX 5962-38267 01 MUX 5962-38267 01 MZX 5962-38267 01 MYX 5962-38267 01 MTX 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 80 0.3 AT28C010-W DIE (ns) Active Standby 120 80 150 Note: 1. See Valid Part Number table on next page. 2-252 AT28C010 Mil Operation Range AT28C010 Mil Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations AT28C010 12 DM/883, EM/883, FM/883, LM/883, UM/883 AT28C010E 12 DM/883, EM/883, LM/883, UM/883 AT28C010 15 DM/883, EM/883, FM/883, LM/883, UM/883 AT28C010E 15 DM/883, EM/883, LM/883, UM/883 AT28C010 20 DM/883, EM/883, FM/883, LM/883, UM/883 AT28C010E 20 DM/883, EM/883, LM/883, UM/883 AT28C010 25 DM/883, EM/883, FM/883, LM/883, UM/883 AT28C010E 25 DM/883, EM/883, LM/883, UM/883 Package Type 32D6 32 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (CERDIP) 32F 32 Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack) 32L 32 Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC) 44L 44 Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC) 30U 30 Pin, Ceramic Pin Grid Array (PGA) W Die Options Blank Standard Device: Endurance = 10K Write Cycles; Write Time = 10 ms E High Endurance Option: Endurance = 100K Write Cycles 2-253