MV1807J1 SILICON VARACTOR DIODE DESCRIPTION: PACKAGE STYLE DO-4 The ASI MV1807J1 is a Diffused Epitaxial Varactor Diode Designed for Multiplier Applications. MAXIMUM RATINGS I 100 mA V 80 V PDISS 21 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC O O O O O O Cathode to case 6.0 C/W CHARACTERISTICS SYMBOL NONE O TC = 25 C TEST CONDITIONS VB IR = 10 µA CT VR = 6.0 V f = 1.0 MHz RS VR = 6.0 V f = 50 MHz MINIMUM TYPICAL UNITS V 80 10.8 13.2 pF Ohms 0.25 FOUT POUT MAXIMUM 1000 MHz W 25.1 FIN 500 MHz PIN 37.0 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1