DCR680N85 Phase Control Thyristor Preliminary Information DS5935-1.0 September 2008 (LN 26350) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 8500V 677A 9800A 1500V/µs 200A/µs * Higher dV/dt selections available Medium Voltage Soft Starts High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR680N85* DCR680N80 DCR680N75 DCR680N70 8500 8000 7500 7000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. 0 0 8200V @ -40 C, 8500V @ 0 C Outline type code: N (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR680N85 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 677 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1063 A Continuous (direct) on-state current - 1013 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 9.8 kA VR = 0 0.48 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.0221 °C/W Single side cooled Anode DC - 0.041 °C/W Cathode DC - 0.0516 °C/W Clamping force 23 kN Double side - 0.004 °C/W (with mounting compound) Single side - 0.008 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 20.0 25.0 kN 2/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 100 A/µs Gate source 30V, 10, Non-repetitive - 200 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 100A to 500A at Tcase = 125°C - 1.03 V Threshold voltage – High level 500A to 2500A at Tcase = 125°C - 1.3 V On-state slope resistance – Low level 100A to 500A at Tcase = 125°C - 2.06 m On-state slope resistance – High level 500A to 2500A at Tcase = 125°C - 1.542 m VD = 67% VDRM, gate source 30V, 10 - 3 µs - 1200 µs 95 118 A 3000 4000 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C,I peak = 1000A, tp = 1000us, VRM = 100V, dI/dt = -5A/µs, dVDR/dt = 20V/µs linear to 2500V IRR Reverse recovery current QS Stored charge IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA IT = 1000A, tp = 1000us,Tj = 125°C, dI/dt = - 5A/µs, VR = 100V 3/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 15 mA CURVES 3000 max 125ºC Instantaneous on-state current, I T - (A) min 125ºC max 25ºC 2500 min 25ºC 2000 1500 1000 500 0 0 2 4 6 Instantaneous on-state voltage, VTM - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.454245 B = 0.106933 C = 0.001271 D = 0.013218 these values are valid for Tj = 125°C for IT 100A to 3000A 4/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR 16 130 180 120 90 60 30 120 ( oC ) case 12 Maximum case temperature, T Mean power dissipation - (kW) 14 10 8 6 180 120 90 60 30 4 2 110 100 90 80 70 60 50 40 30 20 10 0 0 0 500 1000 1500 Mean on-state current, IT(AV) - (A) 0 2000 200 400 600 800 1000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 100 16 14 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( ° C) 125 75 50 12 10 8 6 d.c. 180 120 90 60 30 4 25 2 0 0 0 0 200 400 600 800 1000 500 1000 1500 2000 2500 3000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR 125 d.c. 180 120 90 60 30 100 Maximum heatsink temperature T heatsink -(o C) Maximum permissible case temperature , T case -(° C) 125 75 50 25 0 d.c. 180 120 90 60 30 100 75 50 25 0 0 200 400 600 800 1000 1200 1400 1600 0 500 1000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Thermal Impedance, Z th(j-c) ( °C/kW ) 55.0 Zth Double Side Cooled 45.0 Zth Cathode Side Cooled 40.0 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled 50.0 1500 Anode side cooled Cathode side cooled Zth Anode Side Cooled Ri (°C/kW) 1 3.4733 2 4.9047 3 9.1463 Ti (s) 0.1457 0.0166 1.2832 0.3767 Ri (°C/kW) 7.6674 5.0530 9.7355 27.5992 Ti (s) 0.2241 0.0169 4.0566 8.2780 Ri (°C/kW) 6.0393 4.2782 5.1301 25.0874 Ti (s) 0.1356 0.0143 0.6594 7.2358 Z th [ Ri (1 exp(T / Ti )] i 4 35.0 30.0 i 1 25.0 20.0 Rth(j-c) Conduction 15.0 Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. 10.0 Double side cooling 5.0 0.0 0.001 4 4.5220 ° 0.01 0.1 1 Time ( s ) 10 100 180 120 90 60 30 15 Zth (z) sine. 3.03 3.49 3.99 4.43 4.77 4.92 rect. 2.07 2.95 3.43 3.94 4.49 4.77 Anode Side Cooling ° 180 120 90 60 30 15 Zth (z) sine. 3.03 3.49 3.99 4.43 4.76 4.92 rect. 2.07 2.95 3.43 3.94 4.48 4.77 Cathode Sided Cooling ° 180 120 90 60 30 15 Zth (z) sine. 3.12 3.61 4.13 4.60 4.96 5.13 rect. 2.12 3.04 3.54 4.08 4.66 4.97 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR 25 2.5 1.5 ITSM I2t (MA2s) 15 2 2 It 10 1 5 Surge current, ITSM- (kA) 20 Surge current, ITSM - (kA) 10 Conditions: Tcase= 125°C VR = 0 half-sine wave Conditions: Tcase = 125°C VR =0 Pulse width = 10ms 0.5 0 1 0 100 10 1 1 10 Pulse width, tP - (ms) Fig.10 Single-cycle surge current Fig.11 Multi-cycle surge current 7000 400 Q Smax = 2433*(di/dt)0.3809 I RRmax = 40.556*(di/dt)0.6636 350 Reverse recovery current, IRR - (A/us) 6000 Stored charge, QS - (uC) 100 Number of cycles 5000 4000 Q Smin = 1513*(di/dt)0.4251 3000 Conditions: I F = 1000A tp = 1000us VR = 100V Tj = 125ºC 2000 1000 300 250 200 I RRmin = 29.638*(di/dt)0.7159 150 Conditions: I F = 1000A tp = 1000us VR = 100V Tj = 125ºC 100 50 0 0 0 5 10 15 20 25 30 Rate of decay of on-state current, (di/dt) - (A/us) Fig.12 Stored charge 0 5 10 15 20 25 30 Rate of decy of on-state current, di/dt -(A/us) Fig.13 Reverse recovery current 7/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR 1.35 Normalised Turn-off time, Tq - (us) 1.3 Tq (dv/dt) = 1.25 Tq(20V/us).0.7148.(dv/dt)0.1124 1.2 1.15 1.1 1.05 Conditions: o Tj = 125 C I F = 1000A tp = 1000us VRM = 100V di/dt = -5A/us 1 0.95 0.9 0.85 0.8 0.75 0 20 40 60 80 100 120 Rate of change of reapplied voltage, dv/dt - (V/us) Fig.16 Turn-off time 9/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR1110N52 DCR1260N42 DCR1470N28 DCR1530N28 DCR1710N22 DCR680N85 DCR760N85 DCR820N65 DCR890N65 Maximum Minimum Thickness Thickness (mm) (mm) 34.89 34.34 34.77 34.22 34.54 33.99 34.54 33.99 34.465 33.915 35.51 34.96 35.51 34.96 35.15 34.6 35.15 34.6 Ø73.0 MAX Ø47.0 NOM Ø1.5 CATHODE GATE ANODE Ø47.0 NOM FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: N Fig.17 Package outline 10/11 www.dynexsemi.com DCR680N85 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 11/11 www.dynexsemi.com