CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA March 6, 1997 Preliminary 1.0 Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF October 9, 1997 Final 2.0 Revise - Change datasheet format February 17, 1998 Final 3.0 Revise - Industrial product speed bin change:70/100ns → 55/70ns September 8, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: TFT • Organization: 512Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525 32-TSOP2-400F/R The K6T4008C1B families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range K6T4008C1B-L Standby (ISB1, Max) Operating (ICC2, Max) 100µA 20µA Commercial (0~70°C) K6T4008C1B-B K6T4008C1B-P Speed 4.5~5.5V 551)/70ns PKG Type 32-DIP-600, 32-SOP-525 32-TSOP2-400F/R 80mA 100µA 50µA Inderstrial (-40~85°C) K6T4008C1B-F 32-SOP-525 32-TSOP2-400F/R 1. The parameter is measured with 50pF test load. PIN DESCRIPTION FUNCTIONAL BLOCK DIAGRAM Clk gen. A18 1 32 VCC VCC 32 1 A18 A16 2 31 A15 A15 31 2 A16 A14 3 30 A17 A17 30 3 A14 A18 A12 4 29 WE WE 29 4 A12 A16 A7 5 28 A13 A13 28 5 A7 A14 A6 6 27 A8 A8 27 6 A6 26 A9 A9 26 7 A5 25 A11 A11 25 8 A4 A5 24 OE OE 24 9 A3 A4 23 10 A2 32-DIP 32-SOP 32-TSOP2 (Forward) A12 A7 A5 7 A4 8 A3 9 A2 10 23 A10 A10 A1 11 22 CS CS 22 11 A1 32-TSOP2 (Reverse) A6 A0 A0 12 21 I/O8 I/O8 21 12 A0 13 20 I/O7 I/O7 20 13 I/O1 I/O1 I/O2 14 19 I/O6 I/O6 19 14 I/O2 I/O8 I/O3 15 18 I/O5 I/O5 18 15 I/O3 VSS 16 17 I/O4 I/O4 17 16 VSS Write Enable Input CS Chip Select Input OE Output Enable Input I/O1~I/O8 Data cont I/O Circuit Column select Data cont Function WE A0~A18 Memory array 1024 rows 512×8 columns A1 I/O1 Pin Name Row select Precharge circuit. A9 A8 A13A17 A15 A10 A11 A3 A2 CS WE Address Inputs Control logic OE Data Inputs/Outputs Vcc Power Vss Ground SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family PRODUCT LIST Commercial Temperature Products(0~70°C) Part Name Industrial Temperature Products(-40~85°C) Function Part Name Function 32-SOP, 55ns, L-pwr 32-SOP, 55ns, LL-pwr 32-SOP, 70ns, L-pwr 32-SOP, 70ns, LL-pwr 32-TSOP2-F, 55ns, LL-pwr 32-TSOP2-F, 70ns, LL-pwr 32-TSOP2-R, 55ns, LL-pwr 32-TSOP2-R, 70ns, LL-pwr K6T4008C1B-GP55 K6T4008C1B-GF55 K6T4008C1B-GP70 K6T4008C1B-GF70 K6T4008C1B-VF55 K6T4008C1B-VF70 K6T4008C1B-MF55 K6T4008C1B-MF70 32-DIP, 55ns, L-pwr 32-DIP, 55ns, LL-pwr 32-DIP, 70ns, L-pwr 32-DIP, 70ns, LL-pwr 32-SOP, 55ns, L-pwr 32-SOP, 55ns, LL-pwr 32-SOP, 70ns, L-pwr 32-SOP, 70ns, LL-pwr 32-TSOP2-F, 55ns, LL-pwr 32-TSOP2-F, 70ns, LL-pwr 32-TSOP2-R, 55ns, LL-pwr 32-TSOP2-R, 70ns, LL-pwr K6T4008C1B-DL55 K6T4008C1B-DB55 K6T4008C1B-DL70 K6T4008C1B-DB70 K6T4008C1B-GL55 K6T4008C1B-GB55 K6T4008C1B-GL70 K6T4008C1B-GB70 K6T4008C1B-VB55 K6T4008C1B-VB70 K6T4008C1B-MB55 K6T4008C1B-MB70 FUNCTIONAL DESCRIPTION CS OE WE I/O Pin Mode Power H X1) X1) High-Z Deselected Standby L H H High-Z Output disbaled Active L L H Dout Read Active L X1) L Din Write Active 1. X means don′t care.( Must be in low or high state.) ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Soldering temperature and time Symbol Ratings Unit Remark VIN,VOUT -0.5 to 7.0 V - VCC -0.5 to 7.0 V - PD 1.0 W - TSTG -65 to 150 °C - 0 to 70 °C K6T4008C1B-L/-B -40 to 85 °C K6T4008C1B-P/-F 260°C, 10sec(Lead Only) - - TA TSOLDER 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 3 Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family RECOMMENDED DC OPERATING CONDITIONS 1) Item Symbol Min Typ Max Unit Supply voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.5 2) V Input low voltage VIL -0.53) - 0.8 V Note: 1. Commercial Product: TA=0 to 70°C, otherwise specified Industrial Product: TA=-40 to 85°C, otherwise specified 2. Overshoot: VCC+3.0V in case of pulse width ≤ 30ns 3. Undershoot: -3.0V in case of pulse width ≤ 30ns 4. Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f=1MHz, TA=25°C) Symbol Test Condition Min Max Unit Input capacitance Item CIN VIN=0V - 8 pF Input/Output capacitance CIO VIO=0V - 10 pF 1. Capacitance is sampled, not 100% tested DC AND OPERATING CHARACTERISTICS Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read - 7.5 15 mA ICC1 Cycle time=1µs, 100% duty, I IO=0mA CS≤0.2V, VIN≥0.2V or VIN ≥ Vcc-0.2V Average operating current Read - 4 10 Write - 27 40 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - 65 80 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS=VIH, Other inputs = V IL or VIH - - 3 mA Standby Current(CMOS) ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc 4 K6T4008C1B-L - 2 100 µA K6T4008C1B-B - 1 20 µA K6T4008C1B-P - 2 100 µA K6T4008C1B-F - 1 50 µA Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family AC OPERATING CONDITIONS TEST CONDITIONS (Test Load and Test Input/Output Reference) Input pulse level: 0.8 to 2.4V Input rising and falling time: 5ns Input and output reference voltage: 1.5V Output load (See right): CL=100pF+1TTL CL=50pF+1TTL CL1) 1. Including scope and jig capacitance AC CHARACTERISTICS (Vcc=4.5~5.5V, Commercial product: TA=0 to 70°C, Industrial product: TA=-40 to 85°C) Speed Bins Parameter List Symbol Write Units 70ns Max Min Max tRC 55 - 70 - ns Address access time tAA - 55 - 70 ns Chip select to output tCO - 55 - 70 ns Output enable to valid output tOE - 25 - 35 ns Chip select to low-Z output tLZ 10 - 10 - ns Output enable to low-Z output tOLZ 5 - 5 - ns Chip disable to high-Z output tHZ 0 20 0 25 ns Read cycle time Read 55*ns Min Output disable to high-Z output tOHZ 0 20 0 25 ns Output hold from address change tOH 10 - 10 - ns Write cycle time tWC 55 - 70 - ns Chip select to end of write tCW 45 - 60 - ns Address set-up time tAS 0 - 0 - ns Address valid to end of write tAW 45 - 60 - ns Write pulse width tWP 40 - 50 - ns Write recovery time tWR 0 - 0 - ns Write to output high-Z tWHZ 0 20 0 25 ns Data to write time overlap tDW 25 - 30 - ns Data hold from write time tDH 0 - 0 - ns End write to output low-Z tOW 5 - 5 - ns DATA RETENTION CHARACTERISTICS Item Vcc for data retention Data retention current Symbol VDR IDR Test Condition CS≥Vcc-0.2V Vcc=3.0V, CS≥Vcc-0.2V tSDR Recovery time tRDR See data retention waveform 5 Typ Max Unit V 2.0 - 5.5 K6T4008C1B-L - - 50 K6T4008C1B-B - - 15 K6T4008C1B-P - - 50 K6T4008C1B-F Data retention set-up time Min - - 20 0 - - 5 - - µA ms Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL , WE=VIH) tRC Address tAA tOH Data Out Data Valid Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) tRC Address tOH tAA tCO1 CS tHZ tOE OE Data out High-Z tOLZ tLZ tOHZ Data Valid NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 6 Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) tWC Address tCW(2) tWR(4) CS tAW tWP(1) WE tAS(3) tDW tDH Data Valid Data in tWHZ Data out tOW Data Undefined TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled) tWC Address tCW(2) tAS(3) tWR(4) CS tAW tWP(1) WE tDW Data in Data out tDH Data Valid High-Z High-Z NOTES (WRITE CYCLE) 1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write to the end of write. 2. tCW is measured from the CS going low to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. DATA RETENTION WAVE FORM CS controlled VCC tSDR Data Retention Mode tRDR 4.5V 2.2V VDR CS≥VCC - 0.2V CS GND 7 Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family PACKAGE DIMENSIONS Units: millimeter(Inch) 32 PIN DUAL INLINE PACKAGE (600mil) +0.10 -0.05 +0.004 0.010-0.002 0.25 #17 #1 #16 15.24 0.600 #32 13.60±0.20 0.535±0.008 0~15° 3.81±0.20 0.150±0.008 42.31 MAX 1.666 5.08 0.200 MAX 41.91±0.20 1.650±0.008 ( 3.30±0.30 0.130±0.012 0.46±0.10 0.018±0.004 1.52±0.10 0.060±0.004 1.91 ) 0.075 0.38 0.015 MIN 2.54 0.100 32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil) 0~8° #17 14.12±0.30 0.556±0.012 #1 11.43±0.20 0.450±0.008 #16 2.74±0.20 0.108±0.008 3.00 0.118 MAX 20.87MAX 0.822 20.47±0.20 0.806±0.008 0.20 +0.10 -0.05 0.008+0.004 -0.002 13.34 0.525 #32 0.80±0.20 0.031±0.008 0.10 MAX 0.004 MAX ( 0.71 ) 0.028 +0.100 -0.050 +0.004 0.016 -0.002 0.41 1.27 0.050 0.05 0.002 MIN 8 Revision 3.0 September 1998 CMOS SRAM K6T4008C1B Family PACKAGE DIMENSIONS Units: millimeter(Inch) 32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F) 0.25 ( 0.010 ) #32 0~8° #17 11.76±0.20 0.463±0.008 #1 10.16 0.400 0.45 ~0.75 0.018 ~ 0.030 #16 21.35 MAX 0.841 ( 0.50 ) 0.020 0.15 +0.10 -0.05 0.006 +0.004 -0.002 1.00±0.10 0.039±0.004 1.20 0.047MAX 20.95±0.10 0.825±0.004 0.10 MAX 0.004 MAX ( 0.95 ) 0.037 0.40±0.10 0.016±0.004 0.05 MIN 0.002 1.27 0.050 32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R) 0~8° ( #1 0.25 ) 0.010 #16 11.76±0.20 0.463±0.008 #32 10.16 0.400 0.45 ~0.75 0.018 ~ 0.030 #17 1.00 ±0.10 0.039±0.004 21.35 0.841 MAX +0.10 -0.05 +0.004 0.006 -0.002 0.15 ( 0.50 ) 0.020 1.20 0.047 MAX 20.95±0.10 0.825±0.004 0.10 MAX 0.004 MAX ( 0.95 ) 0.037 0.40±0.10 0.016±0.004 1.27 0.050 0.05 MIN 0.002 9 Revision 3.0 September 1998