MOTOROLA MCM67H618AFN12 64k x 18 bit burstram synchronous fast static ram Datasheet

MOTOROLA
Order this document
by MCM67H618A/D
SEMICONDUCTOR TECHNICAL DATA
MCM67H618A
Product Preview
64K x 18 Bit BurstRAM
Synchronous Fast Static RAM
With Burst Counter and Self–Timed Write
•
•
•
•
•
•
•
•
•
•
•
Single 5 V ± 5% Power Supply
Fast Access Times: 9/10/12 ns Max
Byte Writeable via Dual Write Enables
Internal Input Registers (Address, Data, Control)
Internally Self–Timed Write Cycle
ADSP, ADSC, and ADV Burst Control Pins
Asynchronous Output Enable Controlled Three–State Outputs
Common Data Inputs and Data Outputs
3.3 V I/O Compatible
High Board Density 52–Lead PLCC Package
ADSP Disabled with Chip Enable (E) – Supports Address Pipelining
FN PACKAGE
PLASTIC
CASE 778–02
A6
A7
E
UW
LW
ADSC
ADSP
ADV
K
G
A8
A9
A10
PIN ASSIGNMENT
DQ9
DQ10
VCC
VSS
DQ11
DQ12
DQ13
DQ14
VSS
VCC
DQ15
DQ16
DQ17
7 6 5 4 3 2 1 52 51 50 49 48 47
8
46
9
45
10
44
11
43
12
42
13
41
14
40
15
39
16
38
17
37
18
36
19
35
20
34
21 22 23 24 25 26 27 28 29 30 31 32 33
DQ8
DQ7
DQ6
VCC
VSS
DQ5
DQ4
DQ3
DQ2
VSS
VCC
DQ1
DQ0
A5
A4
A3
A2
A1
A0
VSS
VCC
A15
A14
A13
A12
A11
The MCM67H618A is a 1,179,648 bit synchronous fast static random access
memory designed to provide a burstable, high–performance, secondary cache
for the i486 and Pentium microprocessors. It is organized as 65,536 words
of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS
technology. The device integrates input registers, a 2–bit counter, high speed
SRAM, and high drive capability outputs onto a single monolithic circuit for
reduced parts count implementation of cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock
(K). BiCMOS circuitry reduces the overall power consumption of the integrated
functions for greater reliability.
Addresses (A0 – A15), data inputs (D0 – D17), and all control signals except
output enable (G) are clock (K) controlled through positive–edge–triggered
noninverting registers.
Bursts can be initiated with either address status processor (ADSP) or address
status cache controller (ADSC) input pins. Subsequent burst addresses can be
generated internally by the MCM67H618A (burst sequence imitates that of the
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.
The following pages provide more detailed information on burst controls.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased flexibility for incoming signals.
Dual write enables (LW and UW) are provided to allow individually writeable
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17
(the upper bits).
This device is ideally suited for systems that require wide data bus widths and
cache memory. See Figure 2 for applications information.
PIN NAMES
A0 – A15 . . . . . . . . . . . . . . . . Address Inputs
K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock
ADV . . . . . . . . . . . . Burst Address Advance
LW . . . . . . . . . . . . Lower Byte Write Enable
UW . . . . . . . . . . . . Upper Byte Write Enable
ADSC . . . . . . . . . Controller Address Status
ADSP . . . . . . . . . Processor Address Status
E . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable
G . . . . . . . . . . . . . . . . . . . . . . Output Enable
DQ0 – DQ17 . . . . . . . . . . Data Input/Output
VCC . . . . . . . . . . . . . . . . + 5 V Power Supply
VSS . . . . . . . . . . . . . . . . . . . . . . . . . . Ground
All power supply and ground pins must be
connected for proper operation of the device.
BurstRAM is a trademark of Motorola, Inc.
i486 and Pentium are trademarks of Intel Corp.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
5/95
 Motorola, Inc. 1994
MOTOROLA
FAST SRAM
MCM67H618A
1
BLOCK DIAGRAM (See Note)
ADV
BURST LOGIC
INTERNAL
A0′ ADDRESS
Q0
BINARY
COUNTER
K
A0
A1′
Q1
CLR
ADSC
64K x 18
MEMORY
ARRAY
16
A1
ADSP
2
A1 – A0
ADDRESS
REGISTER
A0 – A15
A2 – A15
18
9
9
16
WRITE
REGISTER
UW
LW
DATA–IN
REGISTERS
ENABLE
REGISTER
E
OUTPUT
BUFFER
9
G
DQ0 – DQ8
DQ9 – DQ17
9
9
9
NOTE: All registers are positive–edge triggered. The ADSC or ADSP signals control the duration of the burst and the start of the
next burst. When ADSP and E are sampled low, any ongoing burst is interrupted and a read (independent of W and ADSC)
is performed using the new external address. Alternatively, an ADSP–initiated two cycle WRITE can be performed by asserting ADSP, E, and a valid address on the first cycle, then negating both ADSP and ADSC and asserting LW and/or UW
with valid data on the second cycle (see Single Write Cycle in WRITE CYCLES timing diagram). Note that when E and
ADSC are high, ADSP is ignored – the external address is not registered in this case.
When ADSC is sampled low (and ADSP is sampled high), any ongoing burst is interrupted and a read or write (dependent
on W) is performed using the new external address. Chip enable (E) is sampled only when a new base address is loaded.
After the first cycle of the burst, ADV controls subsequent burst cycles. When ADV is sampled low, the internal address
is advanced prior to the operation. When ADV is sampled high, the internal address is not advanced, thus inserting a wait
state into the burst sequence accesses. Upon completion of a burst, the address will wrap around to its initial state. See
BURST SEQUENCE TABLE. Write refers to either or both byte write enables (LW, UW).
BURST SEQUENCE TABLE (See Note)
External Address
A15 – A2
A1
A0
1st Burst Address
A15 – A2
A1
A0
2nd Burst Address
A15 – A2
A1
A0
3rd Burst Address
A15 – A2
A1
A0
NOTE: The burst wraps around to its initial state upon completion.
MCM67H618A
2
MOTOROLA FAST SRAM
SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, and 3)
E
ADSP
ADSC
ADV
UW or LW
K
Address Used
Operation
H
X
L
X
X
L–H
N/A
Deselected
L
L
X
X
X
L–H
External Address
Read Cycle, Begin Burst
L
H
L
X
L
L–H
External Address
Write Cycle, Begin Burst
L
H
L
X
H
L–H
External Address
Read Cycle, Begin Burst
X
H
H
L
L
L–H
Next Address
Write Cycle, Continue Burst
X
H
H
L
H
L–H
Next Address
Read Cycle, Continue Burst
X
H
H
H
L
L–H
Current Address
Write Cycle, Suspend Burst
X
H
H
H
H
L–H
Current Address
Read Cycle, Suspend Burst
H
X
H
L
L
L–H
Next Address
Write Cycle, Continue Burst
H
X
H
L
H
L–H
Next Address
Read Cycle, Continue Burst
H
X
H
H
L
L–H
Current Address
Write Cycle, Suspend Burst
H
X
H
H
H
L–H
Current Address
Read Cycle, Suspend Burst
NOTES:
1. X means Don’t Care.
2. All inputs except G must meet setup and hold times for the low–to–high transition of clock (K).
3. Wait states are inserted by suspending burst.
ASYNCHRONOUS TRUTH TABLE (See Notes 1 and 2)
Operation
G
I/O Status
Read
L
Data Out
Read
H
High–Z
Write
X
High–Z — Data In
Deselected
X
High–Z
NOTES:
1. X means Don’t Care.
2. For a write operation following a read operation, G must be high before the input data
required setup time and held high through the input data hold time.
ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V)
Rating
Power Supply Voltage
Symbol
Value
Unit
VCC
– 0.5 to + 7.0
V
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
± 30
mA
Power Dissipation
PD
1.6
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to +70
°C
Voltage Relative to VSS for Any
Pin Except VCC
Storage Temperature
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
MOTOROLA FAST SRAM
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to this high–impedance
circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
MCM67H618A
3
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
Input High Voltage
VIH
4.75
5.25
V
2.2
VCC + 0.3**
V
Input Low Voltage
VIL
– 0.5*
0.8
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Parameter
Ilkg(I)
—
± 1.0
µA
Output Leakage Current (G = VIH)
Ilkg(O)
—
± 1.0
µA
AC Supply Current (G = VIH, E = VIL, Iout = 0 mA, All Inputs = VIL or VIH, VIL = 0.0 V and
VIH ≥ 3.0 V, Cycle Time ≥ tKHKH min)
ICCA9
ICCA10
ICCA12
—
—
—
275
265
250
mA
AC Standby Current (E = VIH, Iout = 0 mA, All Inputs = VIL and VIH, VIL = 0.0 V and
VIH ≥ 3.0 V, Cycle Time ≥ tKHKH min)
ISB1
—
95
mA
Output Low Voltage (IOL = + 8.0 mA)
VOL
—
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
3.3
V
NOTE: Good decoupling of the local power supply should always be used. DC characteristics are guaranteed for all possible i486 and Pentium
bus cycles.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance (All Pins Except DQ0 – DQ17)
Cin
4
5
pF
Input/Output Capacitance (DQ0 – DQ17)
CI/O
6
8
pF
MCM67H618A
4
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 ns
Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output Load . . . . . . . . . . . . See Figure 1A Unless Otherwise Noted
READ/WRITE CYCLE TIMING (See Notes 1, 2, 3, and 4)
MCM67H618A–9
Parameter
MCM67H618A–10
MCM67H618A–12
Symbol
Min
Max
Min
Max
Min
Max
Unit
Cycle Time
tKHKH
15
—
16.6
—
20
—
ns
Clock Access Time
tKHQV
—
9
—
10
—
12
ns
Output Enable to Output Valid
tGLQV
—
5
—
5
—
6
ns
Clock High to Output Active
tKHQX1
6
—
6
—
6
—
ns
Clock High to Output Change
tKHQX2
3
—
3
—
3
—
ns
Output Enable to Output Active
tGLQX
0
—
0
—
0
—
ns
Output Disable to Q High–Z
tGHQZ
—
6
—
7
—
7
ns
Clock High to Q High–Z
tKHQZ
3
6
3
7
3
7
ns
Clock High Pulse Width
tKHKL
5
—
5
—
6
—
ns
Clock Low Pulse Width
tKLKH
5
—
5
—
6
—
ns
Notes
5
6
Setup Times:
Address
Address Status
Data In
Write
Address Advance
Chip Enable
tAVKH
tADSVKH
tDVKH
tWVKH
tADVVKH
tEVKH
2.5
—
2.5
—
2.5
—
ns
7
Hold Times:
Address
Address Status
Data In
Write
Address Advance
Chip Enable
tKHAX
tKHADSX
tKHDX
tKHWX
tKHADVX
tKHEX
0.5
—
0.5
—
0.5
—
ns
7
NOTES:
1. In setup and hold times, W (write) refers to either one or both byte write enables LW and UW.
2. A read cycle is defined by UW and LW high or ADSP low for the setup and hold times. A write cycle is defined by LW or UW low and ADSP
high for the setup and hold times.
3. All read and write cycle timings are referenced from K or G.
4. G is a don’t care when UW or LW is sampled low.
5. Maximum access times are guaranteed for all possible i486 and Pentium external bus cycles.
6. Transition is measured ± 500 mV from steady–state voltage with load of Figure 1B. This parameter is sampled rather than 100% tested.
At any given voltage and temperature, tKHQZ max is less than tKHQZ1 min for a given device and from device to device.
7. This is a synchronous device. All addresses must meet the specified setup and hold times for ALL rising edges of K whenever ADSP or
ADSC is low, and the chip is selected. All other synchronous inputs must meet the specified setup and hold times for ALL rising edges of
K when the chip is enabled. Chip enable must be asserted at each rising edge of clock for the device (when ADSC is low) to remain enabled.
AC TEST LOADS
+5V
480 Ω
OUTPUT
OUTPUT
Z0 = 50 Ω
RL = 50 Ω
255 Ω
5 pF
VL = 1.5 V
Figure 1A
MOTOROLA FAST SRAM
Figure 1B
MCM67H618A
5
MCM67H618A
6
MOTOROLA FAST SRAM
t EVKH
t AVKH
t ADSVKH
t GLQX
A1
SINGLE READ
Q(A1)
t KHQV
t GLQV
t KHEX
t KHAX
t KHKL
t KLKH
Q(A2)
t KHQX2
t ADVVKH
t WVKH
A2
t ADSVKH
t GHQZ
t KHKH
Q(A2 + 1)
t KHQV
t KHADVX
t KHWX
t KHADSX
BURST READ
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
(BURST WRAPS AROUND
TO ITS INITIAL STATE)
(ADV SUSPENDS BURST)
NOTE: Q(A2) represents the first output data from the base address A2; Q(A2 + 1) represents the next output data in the burst sequence with A2 as the base address.
DATA OUT
G
ADV
E
LW, UW
ADDRESS
ADSC
ADSP
K
t KHADSX
READ CYCLES
Q(A2 + 1)
Q(A2 + 2)
t KHQZ
MOTOROLA FAST SRAM
MCM67H618A
7
DATA OUT
DATA IN
G
ADV
E
LW, UW
ADDRESS
ADSC
ADSP
K
BURST READ
Q(An – 1)
t EVKH
t AVKH
t ADSVKH
Q(An)
A1
A2
t KLKH
t KHADSX
SINGLE WRITE
t GHQZ
D(A1)
t KHEX
D(A2)
D(A2 + 1)
D(A2 + 3)
ADSC STARTS NEW BURST
D(A2 + 2)
BURST WRITE
(WITH A SUSPENDED CYCLE)
D(A2 + 1)
ADV SUSPENDS BURST
W IS IGNORED FOR FIRST CYCLE WHEN ADSP INITIATES BURST
t KHAX
t ADSVKH
t KHKL
t KHADSX
t KHKH
WRITE CYCLES
D(A3)
t DVKH
t ADVVKH
t WVKH
A3
D(A3 + 2)
NEW BURST WRITE
D(A3 + 1)
t KHDX
t KHADVX
t KHWX
COMBINATION READ/WRITE CYCLE (E low, ADSC high)
tKHKH
K
tADSVKH
tKHADSX
tKHKL
tKLKH
ADSP
tAVKH
ADDRESS
tKHAX
A1
A2
A3
tWVKH
tKHWX
LW, UW
tADVVKH
tKHADVX
ADV
G
tDVKH
tKHQV
DATA IN
tGLQX
tGHQZ
tKHQX2
Q(A3)
Q(A1)
READ
MCM67H618A
8
tGLQV
D(A2)
tKHQX1
DATA OUT
tKHDX
WRITE
Q(A3 + 1)
Q(A3 + 2)
BURST READ
MOTOROLA FAST SRAM
APPLICATION EXAMPLE
DATA BUS
DATA
ADDRESS BUS
ADDRESS
16
72
CLOCK
Pentium
ADDR
CLK
K
CACHE
CONTROL
LOGIC
NA
ADDR
DATA
K
ADSC
W
MCM67H618AFN9
G
E
ADSP
ADV
ADS
CONTROL
512K Byte Burstable, Secondary Cache
Using Four MCM67H618AFN9s with a 66 MHz Pentium
Figure 2
MOTOROLA FAST SRAM
MCM67H618A
9
ORDERING INFORMATION
(Order by Full Part Number)
MCM
67H618A
XX
XX
Motorola Memory Prefix
Speed (9 = 9 ns, 10 = 10 ns, 12 = 12 ns)
Part Number
Package (FN = PLCC)
Full Part Numbers — MCM67H618AFN9
MCM67H618AFN10 MCM67H618AFN12
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MCM67H618A
10
MOTOROLA FAST SRAM
PACKAGE DIMENSIONS
FN PACKAGE
52–LEAD PLCC
CASE 778–02
B
Y BRK
-N-
0.007 (0.180)
M
T L –M
0.007 (0.180)
U
M
S
N
T L –M
S
N
S
0.010 (0.250)
S
S
D
-L-
-M-
52
LEADS
ACTUAL
(NOTE 1)
52
Z
W
D
1
G1
X
VIEW D-D
V
A
0.007 (0.180)
M
T L –M
S
N
S
R
0.007 (0.180)
M
T L –M
S
N
S
T L –M
N
S
S
Z
C
H
0.004 (0.100)
G
J
-T-
F
S
N
S
0.007 (0.180)
M
T L –M
S
N
S
VIEW S
G1
S
T L –M
K
SEATING
PLANE
VIEW S
0.010 (0.250)
M
K1
E
(NOTE 1)
52
0.007 (0.180)
T L –M
S
N
S
NOTES:
1. DUE TO SPACE LIMITATION, CASE 778-02 SHALL BE
REPRESENTED BY A GENERAL (SMALLER) CASE
OUTLINE DRAWING RATHER THAN SHOWING ALL 52
LEADS.
2. DATUMS -L-, -M-, AND -N- DETERMINED WHERE TOP OF
LEAD SHOULDER EXITS PLASTIC BODY AT MOLD
PARTING LINE.
3. DIM G1, TRUE POSITION TO BE MEASURED AT DATUM -T-,
SEATING PLANE.
4. DIM R AND U DO NOT INCLUDE MOLD FLASH.
ALLOWABLE MOLD FLASH IS 0.010 (0.250) PER SIDE.
5. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
6. CONTROLLING DIMENSION: INCH.
7. THE PACKAGE TOP MAY BE SMALLER THAN THE
PACKAGE BOTTOM BY UP TO 0.012 (0.300). DIMENSIONS
R AND U ARE DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD
FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE
TOP AND BOTTOM OF THE PLASTIC BODY.
8. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION
TO BE GREATER THAN 0.037 (0.940). THE DAMBAR
INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO
BE SMALLER THAN 0.025 (0.635).
MOTOROLA FAST SRAM
DIM
A
B
C
E
F
G
H
J
K
R
U
V
W
X
Y
Z
G1
K1
INCHES
MIN
MAX
0.785 0.795
0.785 0.795
0.165 0.180
0.090 0.110
0.013 0.019
0.050 BSC
0.026 0.032
—
0.020
—
0.025
0.750 0.756
0.750 0.756
0.042 0.048
0.042 0.048
0.042 0.056
0.020
—
10°
2°
0.710 0.730
0.040
—
MILLIMETERS
MIN
MAX
19.94 20.19
19.94 20.19
4.20
4.57
2.29
2.79
0.33
0.48
1.27 BSC
0.66
0.81
0.51
—
0.64
—
19.05 19.20
19.05 19.20
1.07
1.21
1.07
1.21
1.07
1.42
—
0.50
2°
10°
18.04 18.54
1.02
—
MCM67H618A
11
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JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan.
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MCM67H618A
12
◊
CODELINE TO BE PLACED HERE
*MCM67H618A/D*
MOTOROLAMCM67H618A/D
FAST SRAM