IRF IRHLNM77110 Radiation hardened logic level power mosfet surface mount Datasheet

PD-97326A
2N7609U8
IRHLNM77110
100V, N-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
TECHNOLOGY
™
Product Summary
Part Number
IRHLNM77110
Radiation Level
100K Rads (Si)
RDS(on)
0.29Ω
ID
6.5A
IRHLNM73110
300K Rads (Si)
0.29Ω
6.5A
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
SMD-0.2
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
6.5
4.1
26
23.2
0.18
±10
21
6.5
2.32
4.3
-55 to 150
300 (for 5s)
0.25 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
02/21/12
IRHLNM77110, 2N7609U8
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
VGS = 0V, ID = 250µA
—
0.105
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.29
Ω
1.0
—
3.5
—
—
—
-6.0
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
nA
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
11
4.0
6.0
18
75
50
12
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
572
124
1.6
—
—
—
Rg
Gate Resistance
VGS = 4.5V, ID = 4.1A Ã
VDS = VGS, ID = 250µA
nC
VDS = 15V, IDS = 4.1A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 6.5A
VDS = 50V
ns
VDD = 50V, ID = 6.5A,
VGS = 5.0V, RG = 7.5Ω
µA
nH
pF
Ω
10.5
Test Conditions
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
6.5
26
1.2
215
1.05
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 6.5A, VGS = 0V Ã
Tj = 25°C, IF = 6.5A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
Junction-to-Case
Min Typ Max Units
—
—
5.4
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLNM77110, 2N7609U8
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions
V
µA
VGS = 0V, ID = 250µA
VGS = VDS , ID = 250µA
VGS = 10V
VGS = -10V
VDS = 80V, VGS=0V
0.32
Ω
VGS = 4.5V, ID = 4.1A
—
0.29
Ω
VGS = 4.5V, ID = 4.1A
—
1.2
V
VGS = 0V, ID = 6.5A
Upto 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-0.2)
Min
Max
100
1.0
—
—
—
—
2.0
100
-100
1.0
—
Diode Forward Voltage„
nA
1. Part numbers IRHLNM77110, IRHLNM73110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-2V
-4V
-5V
-6V
@VGS=
-7V
100
100
100
100
300 ± 7.5%
38 ± 7.5%
100
100
62 ± 5%
355 ± 7.5%
33 ± 7.5%
100
100
100
100
100
-
85 ± 5%
380 ± 10%
29 ± 7.5%
100
100
100
100
-
-
VDS
38 ± 5%
120
100
80
60
40
20
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
-4
-5
-6
-7
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLNM77110, 2N7609U8
100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
BOTTOM 2.25V
10
1
2.25V
60µs PULSE WIDTH, Tj = 25°C
0.1
0.1
1
10
10
2.25V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
2.0
T J = 150°C
10
T J = 25°C
1
VDS = 50V
60µs PULSE
WIDTH
15
0.1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID = 6.5A
1.5
1.0
0.5
VGS = 4.5V
0.0
0
1
2
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
BOTTOM 2.25V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
Pre-Irradiation
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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RDS(on), Drain-to -Source On Resistance (Ω)
1.0
ID = 6.5A
0.9
0.8
0.7
0.6
0.5
T J = 150°C
0.4
0.3
0.2
0.1
T J = 25°C
0
2
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
IRHLNM77110, 2N7609U8
4
6
8
10
1.0
0.9
0.8
T J = 150°C
0.7
0.6
0.5
0.4
T J = 25°C
0.3
0.2
0.1
Vgs = 4.5V
0
0
12
2
4
6
8
10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
130
3.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
120
110
2.5
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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IRHLNM77110, 2N7609U8
1200
Pre-Irradiation
12
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
1000
ID = 6.5A
C, Capacitance (pF)
C oss = C ds + C gd
800
Ciss
600
Coss
400
Crss
200
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
0
1
10
0
100
4
6
8
10 12 14 16 18 20
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
7
6
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
10
T J = 150°C
T J = 25°C
1.0
5
4
3
2
1
VGS = 0V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
VDS = 80V
VDS = 50V
VDS = 20V
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
30
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
IRHLNM77110, 2N7609U8
10
100µs
1
0.1
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
DC
10
TOP
25
BOTTOM
ID
2.9A
4.1A
6.5A
20
15
10
5
0
100
1000
VDS , Drain-to-Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
D = 0.50
0.20
0.10
1
P DM
t1
0.05
0.02
SINGLE PULSE
( THERMAL RESPONSE )
t2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHLNM77110, 2N7609U8
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
- VDD
IAS
VGS
20V
A
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLNM77110, 2N7609U8
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.98mH
Peak IL = 6.5A, VGS = 10V
 ISD ≤ 6.5A, di/dt ≤ 490A/µs,
VDD ≤ 100V, T J ≤ 150°C
10 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.2
2.69 [.106]
MAX.
5.74 [.226]
5.08 [.200]
4X 0.25 [.010]
REF.
2X
8.15 [.321]
7.75 [.305]
1.02 [.040]
0.76 [.030]
2.13 [.084]
1.88 [.074]
0.83 [.032]
REF.
2X
3
2
1
5.16 [203]
4.90 [.193]
TOP
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2.19 [.086]
1.93 [.076]
2X
1.02 [.040]
0.76 [.030]
4.67 [.184]
4.42 [.174]
3X
0.25 [.010]
REF.
BOTTOM
PAD ASSIGNMENT
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2012
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