JIEJIE ACJT410-10A 4a triac Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
ACJT4 Series
4A TRIACs
Rev.4.0
DESCRIPTION:
The ACJT4 series of double mesa technology provide high
interference immunity, They can be used as an static ON/OFF
function in electrical control system, and used as a driver of
low power and high inductance or resistive loads, such as
jet pumps of dishwashers, fans of air-conditioner ...
ACJT4xx-xxA provides insulation voltage rated at 2500V RMS
and ACJT4xx-xxF provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink.
1 2
3
TO-220A
Insulated
1 2
3
TO-220B
Non-Insulated
2
1
1
2
3
3
TO-251
MAIN FEATURES
TO-252
1
1 2
Symbol
Value
Unit
IT(RMS)
4
A
VDRM /VRRM
1000
V
IGT
≤5 or ≤10 or ≤25
V/μs
3
TO-220F
Insulated
2
3
SOT-223
T1(1)
T2(2)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage( Tj =25℃)
VDRM
1000
V
Repetitive peak reverse voltage( Tj =25℃)
VRRM
1000
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
IT(RMS)
4
A
ITSM
30
A
Storage junction temperature range
Operating junction temperature range
TO-251/ TO-252/
TO-220A(Ins) (TC=110℃)
RMS on-state
TO-220B(Non-Ins)
current
(TC=115℃)
TO-220F(Ins)/ SOT-223
(TC=103℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
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ACJT4 Series
JieJie Microelectronics CO. , Ltd
I2t value for fusing ( tp=10ms)
Rate of rise of on-state current (IG=2×IGT)
I2t
4.5
A2s
dIT/dt
50
A/μs
IGM
1
A
PG(AV)
0.1
W
PGM
1
W
Peak gate current
Average gate power dissipation
Peak gate power
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
VD=12V RL=33Ω
VD=VDRM Tj=125℃
RL=3.3KΩ
Quadrant
Unit
ACJT405
ACJT410
ACJT425
Ⅰ-Ⅱ-Ⅲ
MAX
5
10
25
mA
Ⅰ-Ⅱ-Ⅲ
MAX
1.3
1.4
1.5
V
Ⅰ-Ⅱ-Ⅲ
MIN
Ⅰ-Ⅲ
IL
IG=1.2IGT
IH
IT=100mA
VD=2/3VDRM Gate Open
Tj=125℃
dV/dt
0.2
V
15
30
40
20
45
60
MAX
10
25
35
mA
MIN
300
600
1000
V/μs
MAX
Ⅱ
mA
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=5.6A tp=380μs
VD=VDRM VR=VRRM
Value(MAX)
Unit
Tj=25℃
1.55
V
Tj=25℃
10
μA
Tj=125℃
1
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
junction to case(AC)
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TO-251/ TO-252/
TO-220A(Ins)
3.7
TO-220B(Non-Ins)
2.8
TO-220F(Ins)/ SOT-223
4.5
- 2 / 7-
℃/W
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ACJT4 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
AC
J
T
4
05
AC switch
JieJie Microelectronics Co.,Ltd
Triacs
IT(RMS):4A
05: IGT1-3≤5mA
10: IGT1-3≤10mA
25: IGT1-3≤25mA
-10
H
V:SOT-223
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
H:TO-251 K:TO-252
10:VDRM /VRRM≥1000V
PACKAGE MECHANICAL DATA
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ACJT4 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min.
E
A
B2
D
V1
H
V1
L2
C2
V1
L1
L
B3
C
B
A2
Min.
Typ.
Max.
2.20
2.40
0.086
0.095
A2
0.90
1.20
0.035
0.047
B
0.55
0.65
0.022
0.026
B2
5.10
5.40
0.200
0.213
B3
0.76
0.85
0.030
0.033
C
0.45
0.62
0.018
0.024
C2
0.48
0.62
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
0.264
2.30
0.091
H
16.0
17.0
0.630
0.669
L
8.90
9.40
0.350
0.370
L1
1.80
1.90
0.071
0.075
L2
1.37
1.50
0.054
0.059
4°
V1
TO-251
Max.
A
G
G
Typ.
Inches
4°
Dimensions
Ref.
Millimeters
Min.
E
A
C
0.6 M
IN
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Min.
Typ.
Max.
0.086
0.095
A2
0.03
0.23
0.001
0.009
B
0.55
0.65
0.022
0.026
B2
5.10
5.40
0.200
0.213
C
0.45
0.62
0.018
0.024
C2
0.48
0.62
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
0.264
G
4.40
4.70
0.173
0.185
H
9.35
10.6
0.368
0.417
L1
1.30
1.70
0.051
0.067
L2
1.37
1.50
0.054
0.059
D
2.40
4°
V1
TO-252
Max.
2.20
A2
V2
Inches
A
V1
B
G
V1
V1
L2
C2
L1
H
B2
Typ.
V2
- 4 / 7-
0°
4°
8°
0°
8°
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ACJT4 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
m
E
a
M
8m
Min.
A
C2
H
D
V1
L3
F
Φ
.
x3
Millimeters
L1
C3
L2
Max.
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.80
10.4
0.386
0.409
F
6.55
6.95
0.258
0.274
2.54
28.0
0.1
29.8
1.102
3.75
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
45°
V1
TO-220A Ins
Typ.
4.60
L1
C
Min.
4.40
H
G
Max.
A
G
B
Typ.
Inches
45°
Dimensions
Ref.
mm
.8
x3
E
Min.
A
C2
H
D
V1
L3
F
Φ
Ma
JIE
C3
L1
Millimeters
L2
TO-220B Non-Ins
TEL:+86-513-83639777
Typ.
Max.
4.60
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.60
10.4
0.378
0.409
F
6.20
6.60
0.244
0.260
2.54
28.0
0.1
29.8
1.102
3.75
L1
C
Min.
4.40
H
G
Max.
A
G
B
Typ.
Inches
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
V1
- 5 / 7-
45°
45°
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ACJT4 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
5m
E
M
3.
Min.
A
C2
F
L3
Φ
ax
Millimeters
m
H
D
V1
L1
C3
L2
0.173
0.83
0.029
Max.
0.74
C
0.48
0.75
0.019
0.030
C2
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
0.80
2.54
28.0
29.8
0.031
0.033
1.102
1.173
0.143
1.70
1.14
0.189
0.1
3.63
L2
TO-220F Ins
4.80
Typ.
B
L1
G
Min.
4.40
H
C
Max.
A
G
B
Typ.
Inches
0.045
0.067
L3
3.30
0.130
V1
45°
45°
FIG.1 Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
P(w)
6
IT(RMS) (A)
6
5
5
4
4
3
3
2
2
1
1
0
0
1
2
IT(RMS) (A)
3
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4
5
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0
0
α=180°
TO-220B
(Non-Ins)
TO-251/TO-252/
TO-220A(Ins)
TO-220F(Ins)/
SOT-223
Tc (℃)
25
50
75
100
125
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ACJT4 Series
JieJie Microelectronics CO. , Ltd
FIG.3: Surge peak on-state current versus
number of cycles
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
8
35
t=20ms
One cycle
30
6
25
20
4
Tj=125℃
15
10
Tj=25℃
2
5
0
1
10
Number of cycles
100
1000
FIG.5: Relative variations of gate trigger current
versus junction temperature
0
0
3.0
2.5
2.5
2.0
IGT3
1.5 IGT1&IGT2
1.5
1.0
1.0
0.5
0.5
Tj (℃)
-20
0
20
1.5
2.0
VTM (V)
2.5
IH,IL(Tj) /IH,IL(Tj=25℃)
IGT(Tj) /IGT(Tj=25℃)
0.0
-40
1.0
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
3.0
2.0
0.5
40
60
80
100 120
140
0.0
-40
IH
IL
Tj (℃)
-20
0
20
40
60
80
100
120 140
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the fourth version which is made in 12-June-2015. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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