Diode Semiconductor Korea MBR3030PT - - - MBR30100PT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIERS FEATURES High s urge capacity. TO-3P(TO-247AD) 15.8± 0.2 5.0± 0.15 4.9± 0.25 6.5± 0.3 For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 8.0± 0.2 Metal s ilicon junction, m ajority carrier conduction. 21± 0.5 High current capacity, low forward voltage drop. Guard ring for over voltage protection. 2.0± 0.15 φ3 .6± 0.15 PIN MECHANICAL DATA 1 3 2.4± 0.2 2.2± 0.15 20.4± 0.4 Cas e:JEDEC TO-3P,m olded plas tic body Term inals :Solderable per MIL-STD-750, 1 1 2 3.0± 0.1 1.2± 0.15 Method 2026 Polarity: As m arked 0.6± 0.1 5.4± 0.15 Pos ition: Any Dimensions in millimeters Weight: 0.223 ounce, 6.3 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBR MBR MBR MBR MBR MBR MBR MBR UNITS 3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 80 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 56 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 80 100 V Maximum average forw ard total device m rectified current @TC = 105°C IF(AV) 30 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 200 A Maximum forward voltage (Note 1) (IF=15A,TC=25 ) (IF=15A,TC=125 (I F=30A,TC=25 ) ) VF (I F=30A ,TC=125 ) Maximum reverse current at rated DC blocking voltage @TC =25 @TC =125 IR 0.80 0.85 0.57 0.84 0.70 0.95 0.65 0.95 0.72 0.85 0.75 1.0 0.2 60 40 6.8 4.4 mA Maximum thermal resistance (Note2) R θJC Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range V /W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance from junction to case. www.diode.kr MBR3030PT- - - MBR30100PT Diode Semiconductor Korea FIG.2 -- FORWARD DERATING CURVE 160 8.3ms Single Half Sine Wave TJ=125 120 80 40 0 1 10 100 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 200 AMPERES PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 30 24 18 12 6.0 0 25 50 NUMBER OF CYCLES AT 60HZ Pulse width = 300 µs 1% Duty Cycle 100 TJ=125 TJ =25 10 1 MBR3030PT-MBR3045PT MBR3050PT-MBR3060PT MBR3080PT-MBR30100PT .1 .3 .4 .5 .6 .7 .8 100 125 150 CASE TEMPERATURE, FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 500 AMPERES INSTANTANEOUS FORWARD CURRENT, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 75 10 MBR3030PT-MBR3060PT MBR3080PT-MBR30100PT 1 MBR3030PT-MBR3060PT .1 MBR3080PT-MBR30100PT .01 TC=125℃ TC=25℃ 0 20 40 60 80 100 120 140 .9 1.0 1.1 1.2 1.3 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr