DSK MBR3045PT Schottky barrier rectifier Datasheet

Diode Semiconductor Korea MBR3030PT - - - MBR30100PT
VOLTAGE RANGE: 30 - 100 V
CURRENT: 30 A
SCHOTTKY BARRIER RECTIFIERS
FEATURES
High s urge capacity.
TO-3P(TO-247AD)
15.8± 0.2
5.0± 0.15
4.9± 0.25
6.5± 0.3
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
8.0± 0.2
Metal s ilicon junction, m ajority carrier conduction.
21± 0.5
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
2.0± 0.15
φ3 .6± 0.15
PIN
MECHANICAL DATA
1
3
2.4± 0.2
2.2± 0.15
20.4± 0.4
Cas e:JEDEC TO-3P,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1
2
3.0± 0.1
1.2± 0.15
Method 2026
Polarity: As m arked
0.6± 0.1
5.4± 0.15
Pos ition: Any
Dimensions in millimeters
Weight: 0.223 ounce, 6.3 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR MBR
MBR MBR MBR MBR MBR MBR
UNITS
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT
Maximum recurrent peak reverse voltage
V RRM
30
35
40
45
50
60
80
100
V
Maximum RMS V oltage
V RMS
21
25
28
32
35
42
56
70
V
Maximum DC blocking voltage
V DC
30
35
40
45
50
60
80
100
V
Maximum average forw ard total device
m rectified current @TC = 105°C
IF(AV)
30
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
200
A
Maximum forward
voltage
(Note 1)
(IF=15A,TC=25
)
(IF=15A,TC=125
(I F=30A,TC=25
)
)
VF
(I F=30A ,TC=125 )
Maximum reverse current
at rated DC blocking voltage
@TC =25
@TC =125
IR
0.80
0.85
0.57
0.84
0.70
0.95
0.65
0.95
0.72
0.85
0.75
1.0
0.2
60
40
6.8
4.4
mA
Maximum thermal resistance (Note2)
R θJC
Operating junction temperature range
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Storage temperature range
V
/W
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
www.diode.kr
MBR3030PT- - - MBR30100PT
Diode Semiconductor Korea
FIG.2 -- FORWARD DERATING CURVE
160
8.3ms Single Half Sine Wave
TJ=125
120
80
40
0
1
10
100
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
200
AMPERES
PEAK FORWARD SURGE CURRENT,
FIG.1 -- PEAK FORWARD SURGE CURRENT
30
24
18
12
6.0
0
25
50
NUMBER OF CYCLES AT 60HZ
Pulse width = 300 µs
1% Duty Cycle
100 TJ=125
TJ =25
10
1
MBR3030PT-MBR3045PT
MBR3050PT-MBR3060PT
MBR3080PT-MBR30100PT
.1
.3
.4
.5 .6
.7
.8
100
125
150
CASE TEMPERATURE,
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
500
AMPERES
INSTANTANEOUS FORWARD CURRENT,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
75
10
MBR3030PT-MBR3060PT
MBR3080PT-MBR30100PT
1
MBR3030PT-MBR3060PT
.1
MBR3080PT-MBR30100PT
.01
TC=125℃
TC=25℃
0
20
40
60
80
100
120
140
.9 1.0 1.1 1.2 1.3 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
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