UTC L4863 Dual 2.2w audio amplifier plus stereo headphone function Datasheet

UNISONIC TECHNOLOGIES CO., LTD
L4863
CMOS IC
DUAL 2.2W AUDIO AMPLIFIER
PLUS STEREO HEADPHONE
FUNCTION
SOP-16
SOP-18
DESCRIPTION
The UTC L4863 is a dual bridge-connected audio power
amplifier. It combines dual bridge speaker amplifiers and stereo
headphone amplifiers on one chip to simplify audio system design.
In addition, the headphone input pin allows the amplifiers to
operate in single-ended mode when driving stereo headphones.
The IC could deliver different power by packages as below (when
connected to a 5V supply with less than 1.0% THD+N.):
HTSSOP-20, 4Ω load: 2.2W
HTSSOP-20, 3Ω load: 2.5W(with forced-air cooled)
SOP/DIP
, 8Ω load: 1.1W.
The UTC L4863 features an externally controlled, low-power
consumption shutdown mode, a stereo headphone amplifier mode,
and thermal shutdown protection. It also utilizes circuitry to reduce
“clicks and pops” during device turn-on.
DIP-16
HTSSOP-20
*Pb-free plating product number: L4863L
FEATURES
* “Click and pop” suppression
* Thermal shutdown protection
* Unity-gain stable
* Stereo headphone amplifier mode
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
L4863-D16-T
L4863L-D16-T
L4863-S16-R
L4863L-S16-R
L4863-S16-T
L4863L-S16-T
L4863-S18-R
L4863L-S18-R
L4863-S18-T
L4863L-S18-T
L4863-N20-R
L4863L-N20-R
L4863-N20-T
L4863L-N20-T
Package
Packing
DIP-16
SOP-16
SOP-16
SOP-18
SOP-18
HTSSOP-20
HTSSOP-20
Tube
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
Tube
L4863L-D16-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
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Copyright © 2005 Unisonic Technologies Co., Ltd
(1) R: Tape Reel, T: Tube
(2) D16: DIP-16, S16: SOP-16, S18: SOP-18,
N 20: HTSSOP-20
(3) L: Lead Free Plating, Blank: Pb/Sn
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CMOS IC
PIN CONFIGURATION
DIP-16
SOP-16
SHUTDOWN
1
SOP-18
16
HP-IN
SHUTDOWN
1
18
HP-IN
GND
2
17
GND
+OUT A
3
16
+OUT B
VDD
4
15
VDD
GND
2
15
GND
+OUT A
3
14
+OUT B
VDD
4
13
VDD
-OUT A
5
12
-OUT B
-OUT A
5
14
-OUT B
-IN A
6
13
-IN B
GND
7
12
BYPASS
+IN A
8
11
+IN B
GND
9
10
GND
-IN A
6
11
-IN B
GND
7
10
BYPASS
+IN A
8
9
+IN B
HTSSOP-20
SHUTDOWN
1
20 HP-IN
GND
+OUT A
2
19 GND
3
18 +OUT B
VDD
-OUT A
4
5
-IN A
6
17 VDD
16 -OUT B
15 -IN B
GND
+IN A
7
14 BYPASS
13 +IN B
8
GND 9
GND 10
12 GND
11 GND
THERMAL DATA
PARAMETER
Thermal resistance (Junction to Ambient)
Thermal resistance (Junction to Case)
SYMBOL
SOP-16
SOP-18
DIP-16
HTSSOP-20
SOP-16
SOP-18
DIP-16
HTSSOP-20
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θJA
θJC
RATINGS
80
90
63
90
20
2
20
2
UNIT
℃/W
℃/W
℃/W
℃/W
℃/W
℃/W
℃/W
℃/W
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CMOS IC
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VDD
6.0
V
Recommended Supply Voltage Range
VDD
2.0 ~ 5.5
V
Input Voltage
VIN
-0.3 ~ VDD+0.3
V
Power Dissipation
PD
Internally limited
Junction Temperature
TJ
+125
℃
Operating Temperature
TOPR
-40 ~ +85
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Notes 1)(VDD=5V, Ta =25℃, unless otherwise specified)
PARAMETER
FOR ENTIRE IC
SYMBOL
Supply Voltage
Quiescent Power Supply Current
(Note 2)
Shutdown Current
IDD
VIN=0V, IOUT=0A, HP-IN=0V
VIN=0V, IOUT=0A, HP-IN=4V
VDD applied to the SHUTDOWN pin
VO(OFF) VIN=0V
THD=1%, f=1kHz
Output Power
(measured at the device
terminals)
MIN TYP MAX UNIT
VDD
ISD
High
VIH
Headphone Input Voltage
Low
VIL
FOR BRIDGED-MODE OPERATION
Output Offset Voltage
TEST CONDITIONS
HTSSOP-20
POUT
THD+N=10%, f=1kHz
RL=3Ω
RL=4Ω
RL=3Ω
RL=4Ω
RL=8Ω
RL=8Ω
2
6
2
4
11.5
5.8
0.7
5
2.5
2.2
3.2
2.7
1.1
1.5
0.34
0.3
0.3
5.5
20
V
mA
0.8
µA
V
V
50
mV
W
THD=1%, f=1kHz
1.0
W
THD+N=10%, f=1kHz
THD+N=1%, f=1kHz, RL=32Ω
W
20Hz≤f≤20kHz,
Total
Harmonic HTSSOP-20
RL=4Ω, POUT=2W
THD+N
%
AVD=2
Distortion + Noise
SOP/DIP
RL=8Ω, POUT=1W
VDD=5V, VRIPPLE=200mVRMS, RL=8Ω,
67
dB
Power Supply Rejection Ratio
PSRR
CB=1.0µF
Channel Separation
XTALK f=1kHz, CB=1.0µF
90
dB
Signal To Noise Ratio
SNR VDD=5V, POUT=1.1W, RL=8Ω
98
dB
FOR SINGLE-ENDED OPERATION
Output Offset Voltage
VO(OFF) VIN=0V
5
50
mV
THD=0.5%, f=1kHz, RL=32Ω
75
85
Output Power
POUT THD+N=1%, f=1kHz, RL=8Ω
mW
340
THD+N=10%, f=1kHz, RL=8Ω
440
AV=-1, POUT=75mW,20Hz≤f≤20kHz,
Total Harmonic Distortion + Noise
THD+N
0.2
%
RL=32Ω
Power Supply Rejection Ratio
PSRR CB=1.0µF, VRIPPLE=200mVRMS, f=1kHz
52
dB
Channel Separation
XTALK f=1kHz, CB=1.0µF
60
dB
Signal To Noise Ratio
SNR VDD=5V, POUT=340mW, RL=8Ω
95
dB
Note:1. All voltages are measured with respect to the ground (GND) pins, unless otherwise specified.
2. Depends on the offset voltage when a practical load is connected to the amplifier.
3. When driving 3Ω or 4Ω and operating on a 5V supply, the HTSSOP-20 package must be mounted to the
circuit board that has a minimum of 2.5 in2 of exposed, uninterrupted copper area connected to the
exposed-DAP.
SOP/DIP
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CMOS IC
TYPICAL APPLICATION CIRCUIT
VDD
CI
RF
1µF 20KΩ
Audio
Input
6
RI 8
20KΩ
CB
CI (CB size)
0.33µF
1µF
RI
Audio
Input
10
4,13
- IN A
+IN A
Bypass
11 -IN B
9 +IN B
CS
+ 0.1µF
TANT
AMP 1A
+
20KΩ
50KΩ
VDD/2
-OUT A 5
20KΩ
20KΩ
AMP 2A
+
+OUT A
CONTROL PIN
R L 1kΩ
RING
8Ω
3 To HP-IN Circuit
50KΩ
20KΩ
VDD
RF
20KΩ
100kΩ
1 Shutdown
16 HP-IN
To Control Pin on
Headphone jack
100KΩ
AMP 1B
+
20KΩ
CO
100µF
+
-OUT B 12
20KΩ
20KΩ
14
AMP 2B
+
+OUT B
CO
100µF
+
RL
8Ω
SLEEVE
TIP
HEADPHONE JACK
1kΩ
GND 2,7,15
Note: Pin out shown for DIP-16 and SOP-16 packages. Refer to the PIN CONFIGURATION for the pin out of other
packages.
Figure 1.Typical Audio Amplifier Application Circuit
EXTERNAL COMPONENTS DESCRIPTION
Components
RI
CI
RF
CS
CB
Functional Description
The inverting input resistance, along with RF, set the closed-loop gain. RI, along with CI form a high
pass filter with fc=1/(2πRICI)
The input coupling capacitor blocks DC voltage at the amplifier’s input terminals. CI, along with RI,
create a high pass filter with fc=1/(2πRICI). Refer to the section. Selecting Proper External
Components, for an explanation of determine the value of CI.
The feedback resistance, along with RI, set the closed-Ioop gain.
The supply bypass capacitor. Refer to the Power Supply Bypassing section for information about
properly placing and selecting the value of, this capacitor.
The capacitor, CB, filters the half-supply voltage present on the Bypass pin. Refer to the Selecting
Proper External Components section for information concerning proper placement and selecting
CB’S value.
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QW-R107-050,A
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CMOS IC
TYPICAL CHARACTERISTICS
(For HTSSOP-20)
THD+N vs Output Power
10
VDD=5V, RL =3Ω
POUT=2.2W, BW<80kHz
1
THD+N (%)
THD+N (%)
VDD=5V, R L=3Ω
BW<80kHz
20Hz
THD+N vs Frequency
10
20KHz
0.1
1
0.1
0.01
0 10m
1KHz
0.1
Level (W)
1
5
0.01
0 20
THD+N vs Output Power
10
10
THD+N (%)
THD+N (%)
1
20KHz
10k 20k
THD+N vs Frequency
1
0.1
0.1
1KHz
0.01
0 10m
0.1
Level (W)
1
3
0.01
0 20
100
1k
Frequency (Hz)
10k 20k
Power Dissipation vs Power Output
2
VDD=5V
Power Dissipation (W)
1k
Frequency (Hz)
VDD=5V, RL =4Ω
POUT=2.0W, BW<80kHz
VDD=5V, R L=4Ω
BW<80kHz
20Hz
100
3Ω
1.5
4Ω
1
0.5
0
0
0.5
1.5
1
2
Power Out (W)
2.5
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
(For DIP-16, SOP-16 and SOP-18)
THD+N vs Frequency
5
THD+N(%)
VDD=5V, R 0=1W
RL =8Ω
Bridged Load, No Filters
1
THD+N (%)
5
AVD=20
AVD=10
AVD=2
0.1
0.01
0 20
1
1k
Frequency (Hz)
10k 20k
AV=-5
AV=-1
10k 20k
THD+N
(%)
f=20kHz
0.1
f=20Hz
VDD=5V, RL=8Ω
Bridged Load
AVD=2,BW<80kHz
f=20kHz
f=1kHz
0.01
0 10m
0.1
Output Power (W)
0.1
Output Power (W)
2
VDD=5V, R L=32Ω
Single Ended
AV= -1, BW<80kHz
1
0.1
f=20Hz
f=20kHz
f=1kHz
0.5
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1
THD+N vs Output Power
f=1kHz
0.01
0 10m
1k
10k 20k
Frequency (Hz)
THD+N vs Output Power
0.1
10
VDD=5V, RL =16Ω
Single Ended
AV= -1,
BW<80kHz
100
f=20Hz
THD+N vs Output Power
10
1
1k
Frequency (Hz)
AV=-1
1
THD+N (%)
AV=-10
100
AV =-5
10
VDD=5V, R0=75mW
RL=32Ω, CO=1000μF
Single Ended, No Filters
0.01
0 20
AV =-10
0.01
0 20
THD+N vs Frequency
0.1
VDD=5V, R 0=150mW
RL =16Ω, C O=100µF
Single Ended, No Filters
0.1
THD+N (%)
THD+N (%)
5
100
1
THD+N vs Frequency
0.01
0 10m
0.1
Output Power (W)
0.2
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
THD+N vs Output Power
VDD=-3.3V, AVD= -2
RL=4Ω
VDD=3.3V, AVD=-2
POUT=750mW, RL =4Ω
f=20kHz
1
f=20Hz
1
0.1
0.1
f=1kHz
0.01
10m
0.1
Level (W)
1
0.01
20
2
THD+N vs Output Power
10
10
VDD=-3.3V, AVD=-2
RL =8Ω
f=20kHz
1
f=20Hz
0.1
100
1k
Frequency (Hz)
10k 20k
THD+N vs Frequency
VDD=3.3V, AVD=-2
P OUT=450mW, R L=8Ω
1
THD+N (%)
THD+N (%)
THD+N vs Frequency
10
THD+N (%)
THD+N (%)
10
0.1
f=1kHz
0.01
10m
1
0.01
20
Output Power vs Load Resistance
1000
VDD=3.3V, AV = -1
800 f=1kHz, BW<80kHz
600
THD+N=10%
400
200
THD+N=1%
0
0
20
10
30
Load Resistance (Ω)
100
1k
Frequency (Hz)
10k 20k
Power Dissipation vs Supply Voltage
VDD=3.3V
Single-ended
600
4Ω
400
8Ω
200
16Ω
40
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800
Power Dissipation(mW)
Power Dissipation (mW)
0.1
Level (W)
0
0
250
500
750
Power Out (mW)
1000
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
Output Power vs Supply Voltage
2
Output Power (W)
Output Power (W)
VDD=5V
1.75 f=1kHz
R L=8Ω
1.5
Bridged Load
1.25 BW<80kHz
1
10% THD+N
0.75
0.5
1% THD+N
2
3
3.5 4 4.5
Supply Voltage (V)
5
10% THD+N
0.075
0.05
1% THD+N
0.025
2
2
2.5
3 3.5 4 4.5
Supply Voltage (V)
5
0.75
0
10% THD+N
810
1% THD+N
10
20 30 40 50 60
Load Resistance (Ω)
70
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20
30
40
50
60
70
Output Power vs Supply Voltage
RL =8Ω
0.5
0.4
0.3
R L=16Ω
0.2
0.1
0
1% THD+N
0.6
0.4
0.2
10% THD+N
0.5
0.7
Power Dissipation (W)
0.6
VDD=5V
f=1kHz
AVD=2
Bridged Load
BW<80kHz
Load Resistance(Ω)
VDD=5V
f=1kHz
AV=-1
Single Ended
BW<80kHz
0.8
5.5
Output Power vs Supply Voltage
1
0
5.5
Output Power vs Load resistance
1
3 3.5 4 4.5 5
Supply Voltage (V)
2.5
1.2
5
0.25
0
Output Power (W)
1% THD+N
1.5
Output Power (W)
0.1
0.1
1.75
VDD=5V
f=1kHz
RL =32Ω
Single Ended
BW<80kHz
0.125
10% THD+N
0.15
0
5.5
Output Power vs Supply Voltage
0.15
Output Power (W)
2.5
VDD=5V
0.25 f=1kHz
RL=16Ω
Single Ended
0.2
BW<80kHz
0.05
0.25
0
Output Power vs Supply Voltage
0.3
0
2
R L=32Ω
2.5
VDD=5V
f=1kHz
THD+N∞1.0%
Bridged Load
BW<80kHz
0.5 0.75
1
Output Power (W)
1.25
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
0.2
0.1
5
RL=16 Ω
0.0
5 0
0.1
0.2
0.3
Output Power (W)
VO1 + VO2
VO1
10µ
1µ
20
0.4
Output Level (dB)
Channel A to B
1k
Frequency (Hz)
10k 20k
VDD=5V, RL=32Ω
POUT=75mW, Av=1
CB=1.0µF
Single Ended
-20.00
-60.00
100
Channel Separation
0.0
VDD=5V, RL =8Ω
POUT=1W, AV=1
-20.00 C =1.0µF
B
Bridged Load
-40.00
-80.00
VDD=5V
RL=8Ω
AVD=2, C B=1.0µF
A-Weighted Filter
100µ
Channel Separation
0.0
Output Level (dB)
VDD=5V
f=1kHz
Single Ended
THD+N≦1.0%
BW<80kHz
RL=32 Ω
0.1
Noise Floor
1m
Output Noise Voltage (µv)
Power Dissipation (W)
0.2 Power Dissipation vs Output Power
5
RL=8Ω
-40.00
Channel A to B
-60.00
-80.00
Channel B to A
-100.0
-100.0
Channel B to A
-120.0
20
1k
Frequency (Hz)
-120.0
20
10k 20k
Power Supply Rejection Ratio
70
50
Bridged
Load
60
100
1k
Frequency (Hz)
10k 20k
Open Loop Frequency Response
40
45
0
GAIN
Single
Ended
40
VDD=5V
Vripple=200mVrms
0dB=200mVrms
RL =8Ω
CB =1.0µF
30
20
10
20
100
1k
10k
Frequency (Hz)
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PHASE
20
10
20k
-45
30
0
100
VDD=5V
Single Ended
1k
10k
100k 1M
Frequency (Hz)
Phase (o)
50
GAIN (dB)
PSRR (dB)
100
-90
-135
-180
10M
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
Supply Current vs Supply Voltage
VIN=0V
No Load
12
BRIDGED
(HP-IN=GND)
9
6
3
0
SINGLE-ENDED
(HP-IN=VDD)
2
2.5
3 3.5 4 4.5
Supply Voltage (V)
5
5.5
Dropout Voltage vs Supply Voltage
0.3
Dropout Voltage ( V )
Supply Current (mA)
15
RL=8Ω
Bridged Load
0.25
Top Side
0.2
Botton Side
0.15
0.1
2
2.5
3 3.5 4 4.5
Supply Voltage (V)
5
5.5
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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