NTE192 (NPN) & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), TL . . . . . . . . +260°C Note 1. Determined from power limitations due to saturation voltage at this current. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCB = 50V – – 0.1 µA VCB = 50V, TA = +100°C – – 15 µA VEB = 5V – – 0.1 µA DC Characteristics Collector Cutoff Current Emitter Cutoff Current ICBO IEBO Collector Saturation Voltage VCE(sat) IB = 3mA, IC = 50mA – – 0.30 V Base Saturation Voltage VBE(sat) IB = 3mA, IC = 50mA – – 0.85 V 180 – 540 DC Current Gain hFE VCE = 4.5V, IC = 2mA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max VC = 4.5V, Frequency of Measurement =1000cps 180 – – VCE = 10V, IC = 1mA, f = 1kc 150 – 300 Unit Small–Signal Characteristics Small–Signal Current Gain hfe Input Impedance hie VCE = 10V, IC = 1mA, f = 1kc 4200 – 8300 Ω Output Admittance hoe VCE = 10V, IC = 1mA, f = 1kc 10 – 20 µmhos Voltage Feedback Ratio hre VCE = 10V, IC = 1mA, f = 1kc 0.2 – 0.4 x 10–3 .350 (8.89) .187 (4.76) .156 (3.95) .325 (8.27) .125 (3.17) Dia .500 (12.7) Min .017 (0.45) Dia .100 (2.54) .050 (1.27) 3 .263 (6.7) Max .127 (3.25) 2 1 Pin Number 1 2 3 NTE192/193 C B E NTE192A/193A B C E