NTE NTE193 Silicon complementary transistors audio power output Datasheet

NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), TL . . . . . . . . +260°C
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCB = 50V
–
–
0.1
µA
VCB = 50V, TA = +100°C
–
–
15
µA
VEB = 5V
–
–
0.1
µA
DC Characteristics
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
Collector Saturation Voltage
VCE(sat) IB = 3mA, IC = 50mA
–
–
0.30
V
Base Saturation Voltage
VBE(sat) IB = 3mA, IC = 50mA
–
–
0.85
V
180
–
540
DC Current Gain
hFE
VCE = 4.5V, IC = 2mA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
VC = 4.5V, Frequency of
Measurement =1000cps
180
–
–
VCE = 10V, IC = 1mA, f = 1kc
150
–
300
Unit
Small–Signal Characteristics
Small–Signal Current Gain
hfe
Input Impedance
hie
VCE = 10V, IC = 1mA, f = 1kc
4200
–
8300
Ω
Output Admittance
hoe
VCE = 10V, IC = 1mA, f = 1kc
10
–
20
µmhos
Voltage Feedback Ratio
hre
VCE = 10V, IC = 1mA, f = 1kc
0.2
–
0.4
x 10–3
.350 (8.89)
.187 (4.76)
.156
(3.95)
.325
(8.27)
.125 (3.17) Dia
.500
(12.7)
Min
.017 (0.45) Dia
.100 (2.54)
.050 (1.27)
3
.263
(6.7)
Max
.127 (3.25)
2
1
Pin Number
1
2
3
NTE192/193
C
B
E
NTE192A/193A B
C
E
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