AVAGO ASDL-6270-D31 High performance silicon npn phototransistor in dark t-1â¾ package Datasheet

ASDL-6270
High Performance Silicon NPN Phototransistor in Dark T-1¾ Package
Data Sheet
Description
Features
ASDL-6270 is a silicon phototransistor in a standard T-1¾
molded package that optically filters the visible light,
hence it is not sensitive to ambient light interference. It
has high sensitivity, high speed and low dark current. The
collector is denoted by a flat on the packaging diagram
and the shorter of the two leads.
• T-1¾ package
• Special Dark Lens that Filter Visible Light
• High Sensitivity
• Narrow Viewing Angle
• Low Cost
• Lead-Free & ROHS compliant
• Available in Tape & Reel
Applications
• Suitable for detectors of Infrared Applications
• Photo Interrupter
• Industrial Electronics & Equipment
• Consumer Electronics
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-6270-D22
ASDL-6270-D31
Straight
Dark
Tape & Reel
Bulk
4000pcs
8000pcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protruded resin under flange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at TA=25°C
Parameter
Symbol
Power Dissipation
Collector Emitter Voltage
Max
Unit
PDISS
100
mW
VCEO
30
V
Emitter Collector Voltage
VECO
5
V
Operating Temperature
TO
-40
85
°C
Storage Temperature
TS
-55
100
°C
Junction temperature
TJ
110
°C
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
Min.
260°C for 5 seconds
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Unit
Condition
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
V
Ic= 1mA
Ee = 0mW/cm2
Emitter-Collector
Breakdown Voltage
V(BR)ECO
5
V
Ie = 100µA
Ee = 0mW/cm2
Collector Emitter
Saturation Voltage
VCE(SAT)
0.4
V
Ic = 100µA
Ee = 1mW/cm2
Collector Dark Current
ICEO
100
nA
VCE=10V
Ee=0mW/cm2
Thermal Resistance,
Junction to Pin
RqJP
-
350
Parameter
Symbol
Min.
Typ.
Viewing Angle
2q1/2
20
Deg
Wavelength of Peak sensitivity
900
nm
Spectral BandWidth
λPK
Δλ
Rise Time
tr
10
µs
VCC = 5V
IC = 1mA
RL = 1KΩ
Fall Time
tf
15
µs
VCC = 5V
IC = 1mA
RL = 1KΩ
On State Collector Current
IC(ON)
mA
VCE = 5V
Ee = 1mW/cm2
λ = 940nm
0.1
Max.
°C/W
Optical Characteristics at 25°C
700
2.4
900
Max.
1100
7
Unit
Condition
nm
Iceo-Collector Dark Current-
A
Collector Power Dissipation Pc(mW)
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
100
10
1
0.1
0.01
0
40
0
80
120
120
100
80
60
40
20
0
-40 -20
Ta-Ambient Temperature- o C
tf
tr
2
6
4
8
Relative Sensitivity
10
o
20
3.0
2.0
1.0
0
1
2
o
o
1.0
40
o
0.9
50
o
0.8
60
o
0.7
70
o
80
o
90
o
0.1
4
5
Figure 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE
30
0.5 0.3
3
Ee-Irradiance-mW/cm 2
Figure 3. RISE AND FALL TIME VS LOAD RESISTANCE
o
Vce= 5V
4.0
0
10
RL-Load Resistance-K
0
Figure 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE
Relative Collector Current
Tr Tf-Rise and Fall Time - µs
Vcc=5V
VRL=1V
F =100Hz
PW =1ms
0
20 40 60 80 100
Ta-Ambient Temperature- o C
Figure 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE
200
180
160
140
120
100
80
60
40
20
0
0
0.2 0.4 0.6
Figure 5. SENSITIVITY DIAGRAM
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0012EN - January 22, 2007
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