ASDL-6270 High Performance Silicon NPN Phototransistor in Dark T-1¾ Package Data Sheet Description Features ASDL-6270 is a silicon phototransistor in a standard T-1¾ molded package that optically filters the visible light, hence it is not sensitive to ambient light interference. It has high sensitivity, high speed and low dark current. The collector is denoted by a flat on the packaging diagram and the shorter of the two leads. • T-1¾ package • Special Dark Lens that Filter Visible Light • High Sensitivity • Narrow Viewing Angle • Low Cost • Lead-Free & ROHS compliant • Available in Tape & Reel Applications • Suitable for detectors of Infrared Applications • Photo Interrupter • Industrial Electronics & Equipment • Consumer Electronics Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-6270-D22 ASDL-6270-D31 Straight Dark Tape & Reel Bulk 4000pcs 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice. Absolute Maximum Ratings at TA=25°C Parameter Symbol Power Dissipation Collector Emitter Voltage Max Unit PDISS 100 mW VCEO 30 V Emitter Collector Voltage VECO 5 V Operating Temperature TO -40 85 °C Storage Temperature TS -55 100 °C Junction temperature TJ 110 °C Lead Soldering Temperature [ .6mm (0.063”) From Body ] Min. 260°C for 5 seconds Electrical Characteristics at 25°C Parameter Symbol Min. Typ. Unit Condition Collector-Emitter Breakdown Voltage V(BR)CEO 30 V Ic= 1mA Ee = 0mW/cm2 Emitter-Collector Breakdown Voltage V(BR)ECO 5 V Ie = 100µA Ee = 0mW/cm2 Collector Emitter Saturation Voltage VCE(SAT) 0.4 V Ic = 100µA Ee = 1mW/cm2 Collector Dark Current ICEO 100 nA VCE=10V Ee=0mW/cm2 Thermal Resistance, Junction to Pin RqJP - 350 Parameter Symbol Min. Typ. Viewing Angle 2q1/2 20 Deg Wavelength of Peak sensitivity 900 nm Spectral BandWidth λPK Δλ Rise Time tr 10 µs VCC = 5V IC = 1mA RL = 1KΩ Fall Time tf 15 µs VCC = 5V IC = 1mA RL = 1KΩ On State Collector Current IC(ON) mA VCE = 5V Ee = 1mW/cm2 λ = 940nm 0.1 Max. °C/W Optical Characteristics at 25°C 700 2.4 900 Max. 1100 7 Unit Condition nm Iceo-Collector Dark Current- A Collector Power Dissipation Pc(mW) Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) 100 10 1 0.1 0.01 0 40 0 80 120 120 100 80 60 40 20 0 -40 -20 Ta-Ambient Temperature- o C tf tr 2 6 4 8 Relative Sensitivity 10 o 20 3.0 2.0 1.0 0 1 2 o o 1.0 40 o 0.9 50 o 0.8 60 o 0.7 70 o 80 o 90 o 0.1 4 5 Figure 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE 30 0.5 0.3 3 Ee-Irradiance-mW/cm 2 Figure 3. RISE AND FALL TIME VS LOAD RESISTANCE o Vce= 5V 4.0 0 10 RL-Load Resistance-K 0 Figure 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE Relative Collector Current Tr Tf-Rise and Fall Time - µs Vcc=5V VRL=1V F =100Hz PW =1ms 0 20 40 60 80 100 Ta-Ambient Temperature- o C Figure 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 180 160 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 Figure 5. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0012EN - January 22, 2007