AME AME8844 750ma cmos ldo Datasheet

AME
AME8844
n General Description
The AME8844 family of positive, linear regulators feature low quiescent current (45µA typ.) with low dropout
voltage, making them ideal for battery applications.
750mA CMOS LDO
n Functional Block Diagram
(Fixed Versions)
OUT
IN
Output voltages are set at the factory and trimmed to
1.5% accuracy.
Overcurrent
Shutdown
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" operating conditions.
Thermal
Shutdown
EN
An additional feature is a “Power Good” detector, which
pulls low when the output is out of regulation.
PG
R1
Vrefx115%
AMP
The AME8844 is stable with an output capacitance of
4.7µF or greater.
R2
n Features
Vref x85%
Vref
l Very Low Dropout Voltage
l Guaranteed 750mA Output
l Accurate to within 1.5%
l 45µA Quiescent Current Typically
GND
(Adjustable Version)
IN
OUT
l Over-Temperature Shutdown
l Current Limiting
Overcurrent
Shutdown
l Short Circuit Current Fold-back
Thermal
Shutdown
l Noise Reduction Bypass Capacitor (Fixed
Versions)
R1
AMP
l Power-Saving Shutdown Mode
EN
(external)
l Space-Saving MSOP-8 Package
ADJ
l 6 Factory Pre-set Output Voltages
1.242V
l Low Temperature Coefficient
R2
(external)
l Adjustable Version
l Power Good Output Function.
l All AME's Lead Free Products Meet RoHS
Standards
GND
n Typical Applications
IN
IN
n Applications
l Instrumentation
l Portable Electronics
OUT
OUT
AME8844
PG
GND
EN
C1
C3
1µF
4.7 µF
5V
l Wireless Devices
l PC Peripherals
l Battery Powered Widgets
Rev.F.01
1
AME
AME8844
750mA CMOS LDO
n Pin Configuration
MSOP-8
Top View
8
7
6
MSOP-8
Top View
AME 8844BEQAADJ
5
1
2
3
6
5
AME 8844CEQAxxx
1. EN
2. IN
2. IN
3. ADJ
3. NC
AME8844
4. OUT
5. GND
5. GND
6. GND
6. GND
7. GND
7. PG
8. GND
4
7
1. EN
4. OUT
AME8844
8
1
2
* Die Attach:
3
4
8. GND
* Die Attach:
Conductive Epoxy
Conductive Epoxy
n Pin Description
Pin Number
Pin Name
Pin Description
AME8844BEQA AME8844CEQA
2
1
1
EN
Enable pin.
When pulled low, the PMOS pass transistor turns off, current
consuming less than 1µA.
2
2
IN
Input voltage pin.
It should be decoupled with 1µF or greater capacitor.
3
N/A
ADJ
Feedback output voltage for adjustable device.
N/A
3
NC
No connection.
4
4
OUT
LDO voltage regulator output pin.
It should be decoupled with a 4.7µF or greater value low ESR
ceramic capacitor.
N/A
7
PG
Power-Good output.
This open-drain output is low when output is out of regulation.
5, 6, 7, 8
5, 6, 8
GND
Ground connection pin.
Rev.F.01
AME
AME8844
750mA CMOS LDO
n Ordering Information
AME8844 x x x x xxx x
Special Feature
Output Voltage
Number of Pins
Package Type
Operating Ambient Temperature Range
Pin Configuration
Pin
Configuration
B: 1. EN
(MSOP-8) 2. IN
3. ADJ
4. OUT
5. GND
6. GND
7. GND
8. GND
Operating Ambient
Temperature
Range
E: -40OC to +85OC
Package Type
Q: MSOP
Number
Output Voltage
of
Pins
A: 8
ADJ:
150:
180:
250:
330:
Adjustable
V=1.5V
V=1.8V
V=2.5V
V=3.3V
Special Feature
Z: Lead Free
C: 1. EN
2. IN
3. NC
4. OUT
5. GND
6. GND
7. PG
8. GND
(MSOP-8)
Rev.F.01
3
AME
AME8844
750mA CMOS LDO
n Ordering Information
Part Number
Marking*
Output Voltage
Package
Operating Ambient
Temperature Range
AME8844BEQAADJ
8844
Byww
ADJ
MSOP-8
- 40oC to +85oC
AME8844BEQAADJZ
8844
Byww
ADJ
MSOP-8
- 40oC to +85oC
AME8844CEQA250Z
8844
Nyww
2.50
MSOP-8
- 40oC to +85oC
Note: yww represents the date code
* A line on top of the first character represents lead free plating such as 8844
Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package type.
4
Rev.F.01
AME
AME8844
750mA CMOS LDO
n Absolute Maximum Ratings
Parameter
Maximum
Unit
Input Voltage
-0.3 to +8
V
EN Voltage
-0.3 to +8
V
Output Voltage
-0.3 to VIN + 0.3
V
PG Voltage
-0.3 to VIN + 0.3
V
Output Current
PD / (V IN - VOUT)
mA
B*
ESD Classification
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device.
* HBM B: 2000~3999V
n Recommended Operating Conditions
Parameter
Symbol
Rating
Unit
Ambient Temperature Range
TA
- 40 to +85
o
Junction Temperature Range
TJ
- 40 to +125
o
Storage Temperature Range
TSTG
- 65 to +150
o
C
C
C
n Thermal Information
Parameter
Package
Die Attach
Thermal Resistance *
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
Symbol
Maximum
θJC
100
Unit
o
MSOP-8
Conductive Epoxy
Internal Power Dissipation
θJA
206
PD
625
C/W
mW
Maximum Junction Temperature
150
o
C
Solder Iron(10 Sec)**
350
o
C
* Measure θJC on center of molding compound if IC has no tab.
** MIL-STD-202G 210F
Rev.F.01
5
AME
AME8844
750mA CMOS LDO
n Electrical Specifications
VIN = VO(NOM) +2V, VEN = VIN, TA = 25OC unless otherwise noted
Parameter
Symbol
Input Voltage
VIN
Output Voltage Accuracy
VO
Dropout Voltage
VDROPOUT
Test Condition
IO=1mA
Min
Typ Max
Note 1
7
V
-1.5
1.5
%
VO(NOM)=1.5V
IO=750mA
1000
See
chart
VO(NOM)=1.8V
VO=VONOM -2.0%
VO(NOM)>=2.0V
Output Current
650
mV
500
IO
VO>1.2V
750
mA
Current Limit
ILIM
VO>1.2V
750
mA
Short Circuit Current
ISC
VIN =VO(NOM) +1V, VO<0.4V
750
Quiescent Current
IQ
IO=0mA
45
Ground Pin Current
IGND
IO=1mA to 750mA
45
Line Regulation
Load Regulation
Over Temerature Shutdown
REGLINE
REGLOAD
IO=1mA
VIN =VO+1 to VO+2
VO<2.0V
-0.15
4.0>VO>=2.0V
-0.1
4.0V<=VO
-0.4
IO=1mA to 750mA
-1
OTS
0.02
0.2
mA
70
µA
µA
0.15
%
0.1
%
0.4
%
1
%
150
o
C
o
C
Over Temerature Hysterisis
OTH
30
VO Temperature Coefficient
TC
30
ppm/oC
ADJ Input Bias Current
IADJ
1
µA
Minimum Load Current
ILOAD
ADJ Reference Voltage
VREF
Power Supply Rejection
Output Voltage Noise
EN Input Threshold
EN Input Bias Current
6
Units
PSRR
eN
VIN = 2.5V
70
1.221 1.240 1.26
IO=100mA
CO=4.7µF ceramic
f=10Hz to 100kHz
IO=10mA
f=1kHz
75
f=10kHz
55
f=100kHz
30
Co=4.7µF
30
µA
V
dB
µVrms
VEH
VIN =2.7V to 7V
2.0
Vin
V
VEL
VIN =2.7V to 7V
0
0.4
V
IEH
VEN =VIN , VIN =2.7V to 7V
1
µA
IEL
VEN =0V, VIN =2.7V to 7V
1
µA
Rev.F.01
AME
AME8844
750mA CMOS LDO
n Electrical Specifications (Contd.)
Parameter
Symbol
Test Condition
Shutdown Supply Current
ISD
VIN =5V, VO=0V, VEN <V EL
Output Under Voltage
VUV
PG goes Low when VOUT too Low
Output Over Voltage
VOV
PG goes Low when VOUT too High
PG Leakage Current
ILC
VPG=7V
1
µA
VOL
ISINK=0.25mA
0.4
V
PG Voltage Low
Min
Typ
Max
Units
0.5
2
µA
84
%V O(NOM)
%V O(NOM)
105
Note1:VIN(min) =VOUT+VDROPOUT
Rev.F.01
7
AME
AME8844
750mA CMOS LDO
n Detailed Description
n Enable
The AME8844 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, and thermal shutdown.
When EN pin is pulled low, the PMOS pass transistor
shuts off, and all internal circuits are powered down. In
this state, the quiescent current is less than 2µA. This
pin behaves much like an electronic switch.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference.
Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 140oC, or
the current exceeds 2.2A. During thermal shutdown, the
output voltage remains low. Normal operation is restored
when the junction temperature drops below 120oC.
The AME8844 behaves like a current source when the
load reaches 2.2A. However, if the load impedance drops
below 0.3 ohms, the current drops back to 600mA to
prevent excessive power dissipation. Normal operation
is restored when the load resistance exceeds 0.75 ohms.
n External Capacitors
The AME8844 is stable with an output capacitor to
ground of 4.7µF or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1µF ceramic
capacitor with a 10µF Aluminum Electrolytic. The benefit
is low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
100K ohms resistor is necessary between VEN source
and EN pin when VEN is higher than VIN.
(Note: There is no internal pull-up for EN pin.
It can not be floating)
n Adjustable Version
The adjustable version uses external feedback resistors to generate an output voltage anywhere from 1.5V to
5.0V. Vadj is trimmed to 1.24V and VOUT is given by the
equation:
VOUT = Vadj ( 1 + R1 / R2 )
Feedback resistors R1 and R2 should be high enough
to keep quiescent current low, but increasing R1 + R2
will reduce stability. In general, R1 and R2 in the 10 sof
kΩ will produce adequate stability, given reasonable layout precautions. To improve stability characteristics, keep
parasitics on the ADJ pin to a minimum, and lower R1
and R2 values.
n Power Good
The AME8844 includes the Power Good feature. When
the output is not within ? 5% of the specified voltage, it
pulls low. This can occur under the following conditions:
1) Input Voltage too low.
2) During Over-Temperature.
3) During Over-Current.
4) If output is pulled up.
(Note: PG pin is an open-drain output.)
8
Rev.F.01
AME
AME8844
750mA CMOS LDO
Dropout Voltage VS ILOAD
Dropout Voltage VS VOUT
1
1.2
VOUT=1.5
ILOAD=1.5A
0.8
Dropout Voltage (V)
Dropout Voltage (V)
1
1.8
0.8
2.0
0.6
2.1
0.4
2.8
3.3
0.2
0
0
0.6
ILOAD=1.0A
0.4
ILOAD=0.5A
0.2
0
0.3
0.6
0.9
1.2
1.5
0
1.8
2
4
Quiescent Current vs. Temperature
8
Ground Current vs. VIN
50
41
39
45
37
40
Ground Current (µA)
Quiescent Current @ 5V
(uA)
6
VOUT (V)
ILOAD (A)
35
33
31
29
35
IOUT = 140mA
V OUT = 1.5V
30
25
20
15
27
10
25
-45
-5
25
55
85
115
2
3
4
5
6
7
8
VIN (V)
Temperature (o C)
Ground Current vs. Load Current
VOUT vs. Temperature(2.5V)
38.5
2.500
2.495
37.5
Output Voltage (V)
G round Current (µA)
38
V IN = 2.5V
VOUT = 1.5V
37
36.5
36
35.5
2.490
2.485
2.480
35
34.5
0
0.25
0.5
0.75
1
Load Current (A)
Rev.F.01
1.25
1.5
2.475
-45
-5
25
55
Temperature
85
115
(oC)
9
AME
AME8844
750mA CMOS LDO
Load Regulation vs. Temperature
Dropout Voltage vs. Load Current(2.5V)
400
Dropout Voltage @1.5A (mV)
0.30
Load Regulation (%)
0.25
0.20
0.15
0.10
0.05
0.00
-45
-5
25
55
85
115 oC
85 oC
350
55 oC
300
25 oC
250
-5 oC
-45 oC
200
150
100
50
0
115
0.3
Temperature (oC)
0.6
0.9
1.2
1.5
Load Current (A)
AME8844BEQA VADJ vs. Temperature
Line Transient Response
1.244
VOUT (50mV/DIV)
1.243
VADJ (V)
1.242
1.241
1.240
1.239
VIN (2V/DIV)
1.238
1.237
1.236
1.235
-45
-5
25
55
85
0
115
Time (20mS/DIV)
Temperature (o C)
VIN = 5V
CIN = 4.7µF
COUT = 4.7µF
VOUT 1V/DIV
0
Time 500µS/DIV
10
Current Limit Response
0V
ILOAD 1A/DIV
VOUT 10mV/DIV
ILoa d 1A/DIV
Load Step 40mA to 1.5A
CIN = 4.7µF
COUT = 4.7µF
VIN = 4.0V
VOUT = 1.8V
C IN = 4.7µF
C OUT = 4.7µF
T R = TF = 1µS
VOUT = 1.5V
ILIM
ISC
0A
Time 1mS/DIV
Rev.F.01
AME
AME8844
750mA CMOS LDO
Current Limit vs. VIN
Short Circuit Current vs. VIN
1.6
3
2.6
Current Limit (A)
2.4
C IN = 4.7µF
C OUT = 4.7µF
VOUT = 1.8V
1.4
Short Circuit Current (A)
2.8
2.2
2
1.8
1.6
1.4
1
0.8
0.6
0.4
0.2
1.2
1
2
C IN = 4.7µF
C OUT = 4.7µF
1.2
0
3
4
5
6
7
2
8
3
4
5
6
7
8
1250
1500
VIN (V)
VIN (V)
Overtemperature Shutdown
Stability vs. ESR vs. ILoad
10000
IOUT 1A/DIV
Unstable Region
1000
C L=5µF
VOUT 1V/DIV
VIN = 4V
CIN = 4.7µF
COUT = 4.7µF
C LESR (Ω )
100
0A
10
1
Stable Region
0.1
0V
Untested Region
0.01
0
250
500
750
1000
ILOAD (mA)
Time 100mS/DIV
Stability vs. ESR vs. ILoad
Stability vs. ESR vs. ILoad
10000
10000
Unstable Region
Unstable Region
1000
1000
C L=10µF
C LESR (Ω )
CLESR (Ω )
100
CL=2µF
100
10
1
Stable Region
Stable Region
0.1
Untested Region
Untested Region
250
500
750
1000
ILOAD (mA)
Rev.F.01
1
0.01
0.1
0.01
0
10
1250
1500
0.001
0
250
500
750
1000
1250
1500
ILOAD (mA)
11
AME
AME8844
750mA CMOS LDO
n External Resistor Divider Table
R1
(K Ohm)
1
12
5
10
20
R2(kohm)=(1.24*R1(kohm))/(Vout-1.24)
Vout
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
2
20.67
11.27
7.75
5.90
4.77
4.00
3.44
3.02
2.70
2.43
2.21
2.03
1.88
1.75
1.63
1.53
1.44
1.36
1.29
1.23
1.17
1.12
1.07
1.02
0.98
0.95
0.91
0.88
0.85
0.82
0.79
0.77
0.75
0.73
0.70
0.69
0.67
41.33
22.55
15.50
11.81
9.54
8.00
6.89
6.05
5.39
4.86
4.43
4.07
3.76
3.49
3.26
3.06
2.88
2.73
2.58
2.46
2.34
2.23
2.14
2.05
1.97
1.89
1.82
1.76
1.70
1.64
1.59
1.54
1.49
1.45
1.41
1.37
1.33
103.33
56.36
38.75
29.52
23.85
20.00
17.22
15.12
13.48
12.16
11.07
10.16
9.39
8.73
8.16
7.65
7.21
6.81
6.46
6.14
5.85
5.59
5.34
5.12
4.92
4.73
4.56
4.40
4.25
4.11
3.97
3.85
3.73
3.63
3.52
3.43
3.33
206.67
112.73
77.50
59.05
47.69
40.00
34.44
30.24
26.96
24.31
22.14
20.33
18.79
17.46
16.32
15.31
14.42
13.63
12.92
12.28
11.70
11.17
10.69
10.25
9.84
9.47
9.12
8.79
8.49
8.21
7.95
7.70
7.47
7.25
7.05
6.85
6.67
413.33
225.45
155.00
118.10
95.38
80.00
68.89
60.49
53.91
48.63
44.29
40.66
37.58
34.93
32.63
30.62
28.84
27.25
25.83
24.55
23.40
22.34
21.38
20.50
19.68
18.93
18.24
17.59
16.99
16.42
15.90
15.40
14.94
14.50
14.09
13.70
13.33
Rev.F.01
AME
AME8844
750mA CMOS LDO
n External Resistor Divider Table (contd.)
R1
(K Ohm)
1
5
10
20
R2(kohm)=(1.242*R1(kohm))/(Vout-1.242)
Vout
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
3.75
3.80
3.85
3.90
3.95
4.00
4.05
4.10
4.15
4.20
4.25
4.30
4.35
4.40
4.45
4.50
4.55
4.60
4.65
4.70
4.75
4.80
4.85
4.90
4.95
5.00
2
0.65
0.63
0.62
0.60
0.59
0.57
0.56
0.55
0.54
0.53
0.51
0.50
0.49
0.48
0.48
0.47
0.46
0.45
0.44
0.43
0.43
0.42
0.41
0.41
0.40
0.39
0.39
0.38
0.37
0.37
0.36
0.36
0.35
0.35
0.34
0.34
0.33
0.33
1.30
1.27
1.23
1.20
1.18
1.15
1.12
1.10
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
0.92
0.90
0.88
0.87
0.85
0.84
0.82
0.81
0.80
0.78
0.77
0.76
0.75
0.74
0.73
0.72
0.71
0.70
0.69
0.68
0.67
0.66
3.25
3.16
3.08
3.01
2.94
2.87
2.81
2.74
2.68
2.63
2.57
2.52
2.47
2.42
2.38
2.33
2.29
2.25
2.21
2.17
2.13
2.09
2.06
2.03
1.99
1.96
1.93
1.90
1.87
1.85
1.82
1.79
1.77
1.74
1.72
1.69
1.67
1.65
6.49
6.33
6.17
6.02
5.88
5.74
5.61
5.49
5.37
5.25
5.15
5.04
4.94
4.84
4.75
4.66
4.58
4.49
4.41
4.34
4.26
4.19
4.12
4.05
3.99
3.92
3.86
3.80
3.75
3.69
3.64
3.58
3.53
3.48
3.43
3.39
3.34
3.30
12.98
12.65
12.34
12.04
11.75
11.48
11.22
10.97
10.74
10.51
10.29
10.08
9.88
9.69
9.50
9.32
9.15
8.99
8.83
8.67
8.52
8.38
8.24
8.10
7.97
7.85
7.73
7.61
7.49
7.38
7.27
7.17
7.07
6.97
6.87
6.78
6.68
6.60
Note: Small load(greater than 2 mA) is necessary as R1 or R2 is larger than
50 K Ohm. Otherwise, outputvoltage probably cannot be pulled down to 0 V
on disable mode.
Rev.F.01
13
AME
AME8844
750mA CMOS LDO
n Tape and Reel Dimension
MSOP-8
P
PIN 1
W
AME
AME
AME
AME
Carrier Tape, Number of Components Per Reel and Reel Size
14
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
MSOP-8
12.0±0.1 mm
4.0±0.1 mm
4000pcs
330±1 mm
Rev.F.01
AME
AME8844
750mA CMOS LDO
n Package Dimension
MSOP-8
SYMBOLS
Top View
DETAIL A
D
e1
TOP PKG.
BTM PKG.
E1
E
θ
L2
L
L1
PIN 1 I.D
(SHINNY SURFACE)
R0.127(0 .005) TYP
ALL CORNER
& EDGES
Front View
MAX
MIN
MAX
A
-
1.07
-
0.04197
A1
0.05
0.20
0.002
0.008
A2
0.81
0.92
0.032
0.036
b
0.28
0.38
0.011
0.015
b1
0.28
0.33
0.011
0.013
c
0.13
0.23
0.005
0.009
c1
0.13
0.17
0.005
0.006
D
2.90
3.10
0.114
0.122
E
4.77
4.98
0.188
0.196
E1
2.90
3.10
0.114
0.122
e
0.65 TYP
0.0255 TYP
e1
1.95 TYP
0.0767 TYP
0.406
0.686
L1
0.94 REF
L2
0.254 TYP
θ
A1
INCHES
MIN
L
A A2
MILLIMETERS
0
o
8
0.01598 0.02701
0.037 REF
0.010 TYP
o
0
o
8
o
e
b
End View
SECTION B-B
b
b1
BASE METAL
B
c
B
E1
See Detail A
Rev.F.01
c1
WITH PLATING
NOTE:
1. Controlling dimension : Millimeter, converted inchdimension
are not necessarily exact.
2. Dimensiioning and tolerancing per ansi Y14.5m-1994.
3. Dimension "d" does not include mold flash,protrusion or gate
burr, mold flash,protrusion and gate burr shall not exceed
0.15mm(0.006") per side. Dimension e1 do not include inter-lead
flash or protrusion, inter-lead flash and protrusion shall not exceed 0.15mm(0.006") per side.
4. The package top be smaller than the package bottom. Dimension d and e1 are determined at outermost extremes of the
plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
5. Dimension 'b' does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm(0.0031) total in excess of
the "b" dimension at maximum material condition.
15
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , May 2009
Document: 2013-DS8844-F.01
Corporate Headquarter
AME, Inc.
2F, 302 Rui-Guang Road, Nei-Hu Dist.
Taipei 114 Taiwan.
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989