Mitsubishi M63827DP 7-unit 500ma darlington transistor array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63827WP and M63827DP are seven-circuit Darlington
transistor arrays with clamping diodes. The circuits are made
of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
FEATURES
Two package configurations (WP/DP)
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL, PMOS IC output
Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION







INPUT 







IN1→ 1
16 →O1 
IN2→ 2
15 →O2 

IN3→ 3
14 →O3 
IN4→ 4
13 →O4  OUTPUT
IN5→ 5
12 →O5 
IN6→ 6
11 →O6 
IN7→ 7
10 →O7 
GND
9







8
COM COMMON
16P4X-A(WP)
Package type 16P2X-B(DP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
INPUT
2.7K
7.2K
3K
GND
The seven circuits share the COM and GND.
FUNCTION
The M63827WP and M63827DP each have seven circuits
consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –40 ~ +85 °C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
Unit
V
500
mA
–0.5 ~ +30
500
V
mA
50
1.47(WP)/1.00(DP)
V
W
–40 ~ +85
–55 ~ +125
°C
°C
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
(Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
Parameter
VO
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
IC
VIH
“H” input voltage
VIL
“L” input voltage
min
typ
max
0
—
50
0
—
400
200
Duty Cycle
WP : no more than 8%
DP : no more than 5%
Duty Cycle
WP : no more thn 30%
DP : no more than 20%
IC ≤ 400mA
0
—
3.85
—
IC ≤ 200mA
3.4
—
—
V
mA
0
ELECTRICAL CHARACTERISTICS
Unit
25
V
0.6
V
(Unless otherwise noted, Ta = 25 °C)
Limits
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE (sat)
II = 500µA, IC = 350mA
Collector-emitter saturation voltage II = 350µA, IC = 200mA
—
—
1.2
1.0
1.6
1.3
II = 250µA, IC = 100mA
VI = 3.85V
—
0.9
1.1
—
—
0.9
1.4
1.4
2.0
mA
V
—
1000
—
3000
100
—
µA
—
min
Limits
typ
max
—
20
—
ns
—
400
—
ns
II
Test conditions
VF
Input current
Clamping diode forward voltage
IR
h FE
Clamping diode reverse current
DC amplification factor
SWITCHING CHARACTERISTICS
Symbol
ICEO = 100µA
IF = 350mA
VR = 50V
VCE = 2V, IC = 350mA
Turn-on time
toff
Turn-off time
typ
—
Unit
max
—
V
V
(Unless otherwise noted, Ta = 25°C)
Parameter
ton
min
50
Test conditions
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
Unit
TIMING DIAGRAM
VO
INPUT
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 3.85V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Clamping Diode Characteristics
M63827WP
1.5
M63827DP
1.0
0.764
0.520
0.5
0
0
25
50
75 85
q
0.4
0.8
1.2
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
80
e
r
t
y
u
1.6
500
400
q
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
100
0
100
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M63827DP)
Duty-Cycle-Collector Characteristics
(M63827DP)
500
w
e
r
t
y
u
100
500
q
400
300
w
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
Duty cycle (%)
80
e
r
t
y
u
100
Collector current Ic (mA)
Collector current Ic (mA)
0
Ta = –40°C
Duty-Cycle-Collector Characteristics
(M63827WP)
200
0
Ta = 25°C
100
Duty-Cycle-Collector Characteristics
(M63827WP)
w
0
Ta = 85°C
200
Forward bias voltage VF (V)
300
0
300
0
100
400
100
400
Ambient temperature Ta (°C)
500
Collector current Ic (mA)
Forward bias current IF (A)
500
Collector current Ic (mA)
Power dissipation Pd (W)
2.0
400
300
q
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
100
0
0
20
40
60
w
e
r
ty
u
•Ta = 85°C
80
100
Duty cycle (%)
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
500
Il=500 m A
80
Collector current Ic (A)
Collector current Ic (A)
100
Ta=–40°C
60
Ta=25°C
40
Ta=85°C
20
0
0.2
0
0.4
0.6
0.8
Il=500 m A
400
Ta=85°C
300
Ta=25°C
200
Ta=–40°C
100
0
1.0
DC Amplification Factor
Collector Current Characteristics
1.2
1.6
Grounded Emitter Transfer Characteristics
104
500
VCE = 2V
7
5
Collector current Ic (mA)
Ta = 85°C
3
2
103
Ta = –40°C
7
5
Ta = 25°C
3
Ta = 85°C
400
Ta = 25°C
300
Ta = –40°C
200
100
2
102 1
10
2
3
5 7 102
2
0
5 7 103
3
0
0.4
Collector current Ic (mA)
1.2
1.6
3
12
Input current II (mA)
16
Ta = 25°C
Ta = –40°C
1
0
1
2
3
Input voltage VI (V)
2.4
Ta = –40°C
Ta = 25°C
8
4
Ta = 85°C
Ta = 85°C
0
2.0
Input Characteristics
4
2
0.8
Input voltage VI (V)
Input Characteristics
Input current II (mA)
0.8
Output saturation voltage VCE(sat) (V)
Output saturation voltage VCE(sat) (V)
DC amplification factor hFE
0.4
0
4
5
0
0
5
10
15
20
25
Input voltage VI (V)
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
PACKAGE OUTLINE
16P4X-A
Dimension in mm
e2
e1
E
c
PACKAGE TYPE :
16P4X-A 16PIN PLASTIC MOLD DUAL INLINE PACKAGE
L
A1
A
A2
D
e
b1
b
SEATING PLANE
b2
Symbol
A
A1
A2
b
b1
b2
c
D
E
e
e1
e2
L
Dimension in Millimeters
Min
Max
Nom
4.57
0.38
3.3
3.25
3.45
0.46
0.36
0.56
1.52
1.78
1.14
0.99
0.76
1.14
0.25
0.20
0.33
19.15
19.3
18.9
6.5
6.65
6.35
2.54
7.94
7.62
8.26
9.65
8.64
9.145
3.18
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
16P2X-B
Dimension in mm
E
HE
PACKAGE TYPE :
16P2X-B 16PIN PLASTIC MOLD SMALL OUTLINE PACKAGE
F
A
A2
A1
L
D
b
c
e
y
Detail F
e
b2
Dimension in Millimeters
l2
Symbol
Min
Nom
Max
A
1.47
1.6
1.73
A1
0.1
0.175
0.25
e1
A2
1.45
0.402
0.41
c
0.19
0.2
0.25
D
9.8
9.91
10.01
E
e
3.81
3.91
3.99
HE
5.79
5.99
6.2
L
y
0.37
0.71
1.27
1.27
0.1
0
Recommended Mount Pad
0.42
b
b2
e1
l2
8
0.76
5.72
1.27
Feb. 2003
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