MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. FEATURES Two package configurations (WP/DP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta = –40 to +85°C) PIN CONFIGURATION INPUT IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 OUTPUT IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 9 8 COM COMMON 16P4X-A(WP) Package type 16P2X-B(DP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces INPUT 2.7K 7.2K 3K GND The seven circuits share the COM and GND. FUNCTION The M63827WP and M63827DP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –40 ~ +85 °C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +50 Unit V 500 mA –0.5 ~ +30 500 V mA 50 1.47(WP)/1.00(DP) V W –40 ~ +85 –55 ~ +125 °C °C Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Parameter VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC VIH “H” input voltage VIL “L” input voltage min typ max 0 — 50 0 — 400 200 Duty Cycle WP : no more than 8% DP : no more than 5% Duty Cycle WP : no more thn 30% DP : no more than 20% IC ≤ 400mA 0 — 3.85 — IC ≤ 200mA 3.4 — — V mA 0 ELECTRICAL CHARACTERISTICS Unit 25 V 0.6 V (Unless otherwise noted, Ta = 25 °C) Limits Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA — — 1.2 1.0 1.6 1.3 II = 250µA, IC = 100mA VI = 3.85V — 0.9 1.1 — — 0.9 1.4 1.4 2.0 mA V — 1000 — 3000 100 — µA — min Limits typ max — 20 — ns — 400 — ns II Test conditions VF Input current Clamping diode forward voltage IR h FE Clamping diode reverse current DC amplification factor SWITCHING CHARACTERISTICS Symbol ICEO = 100µA IF = 350mA VR = 50V VCE = 2V, IC = 350mA Turn-on time toff Turn-off time typ — Unit max — V V (Unless otherwise noted, Ta = 25°C) Parameter ton min 50 Test conditions CL = 15pF (note 1) NOTE 1 TEST CIRCUIT Unit TIMING DIAGRAM VO INPUT 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 3.85V (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics Clamping Diode Characteristics M63827WP 1.5 M63827DP 1.0 0.764 0.520 0.5 0 0 25 50 75 85 q 0.4 0.8 1.2 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 80 e r t y u 1.6 500 400 q 300 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M63827DP) Duty-Cycle-Collector Characteristics (M63827DP) 500 w e r t y u 100 500 q 400 300 w 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 Duty cycle (%) 80 e r t y u 100 Collector current Ic (mA) Collector current Ic (mA) 0 Ta = –40°C Duty-Cycle-Collector Characteristics (M63827WP) 200 0 Ta = 25°C 100 Duty-Cycle-Collector Characteristics (M63827WP) w 0 Ta = 85°C 200 Forward bias voltage VF (V) 300 0 300 0 100 400 100 400 Ambient temperature Ta (°C) 500 Collector current Ic (mA) Forward bias current IF (A) 500 Collector current Ic (mA) Power dissipation Pd (W) 2.0 400 300 q 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. 100 0 0 20 40 60 w e r ty u •Ta = 85°C 80 100 Duty cycle (%) Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Output Saturation Voltage Collector Current Characteristics Output Saturation Voltage Collector Current Characteristics 500 Il=500 m A 80 Collector current Ic (A) Collector current Ic (A) 100 Ta=–40°C 60 Ta=25°C 40 Ta=85°C 20 0 0.2 0 0.4 0.6 0.8 Il=500 m A 400 Ta=85°C 300 Ta=25°C 200 Ta=–40°C 100 0 1.0 DC Amplification Factor Collector Current Characteristics 1.2 1.6 Grounded Emitter Transfer Characteristics 104 500 VCE = 2V 7 5 Collector current Ic (mA) Ta = 85°C 3 2 103 Ta = –40°C 7 5 Ta = 25°C 3 Ta = 85°C 400 Ta = 25°C 300 Ta = –40°C 200 100 2 102 1 10 2 3 5 7 102 2 0 5 7 103 3 0 0.4 Collector current Ic (mA) 1.2 1.6 3 12 Input current II (mA) 16 Ta = 25°C Ta = –40°C 1 0 1 2 3 Input voltage VI (V) 2.4 Ta = –40°C Ta = 25°C 8 4 Ta = 85°C Ta = 85°C 0 2.0 Input Characteristics 4 2 0.8 Input voltage VI (V) Input Characteristics Input current II (mA) 0.8 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) DC amplification factor hFE 0.4 0 4 5 0 0 5 10 15 20 25 Input voltage VI (V) Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE PACKAGE OUTLINE 16P4X-A Dimension in mm e2 e1 E c PACKAGE TYPE : 16P4X-A 16PIN PLASTIC MOLD DUAL INLINE PACKAGE L A1 A A2 D e b1 b SEATING PLANE b2 Symbol A A1 A2 b b1 b2 c D E e e1 e2 L Dimension in Millimeters Min Max Nom 4.57 0.38 3.3 3.25 3.45 0.46 0.36 0.56 1.52 1.78 1.14 0.99 0.76 1.14 0.25 0.20 0.33 19.15 19.3 18.9 6.5 6.65 6.35 2.54 7.94 7.62 8.26 9.65 8.64 9.145 3.18 Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 16P2X-B Dimension in mm E HE PACKAGE TYPE : 16P2X-B 16PIN PLASTIC MOLD SMALL OUTLINE PACKAGE F A A2 A1 L D b c e y Detail F e b2 Dimension in Millimeters l2 Symbol Min Nom Max A 1.47 1.6 1.73 A1 0.1 0.175 0.25 e1 A2 1.45 0.402 0.41 c 0.19 0.2 0.25 D 9.8 9.91 10.01 E e 3.81 3.91 3.99 HE 5.79 5.99 6.2 L y 0.37 0.71 1.27 1.27 0.1 0 Recommended Mount Pad 0.42 b b2 e1 l2 8 0.76 5.72 1.27 Feb. 2003