CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high current capability. SOT-23 CASE The following configurations are available: CMPD5001 CMPD5001S SINGLE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING CODE: DA2 MARKING CODE: D49 SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ, Tstg ΘJA 120 400 800 600 6.0 1.5 350 -65 to +150 357 UNITS V mA mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=90V 100 nA IR 100 μA BVR VR=90V, TA=150°C IR=50μA 325 V VF IF=10mA 0.75 V VF IF=50mA 0.84 V VF IF=100mA 0.90 V VF IF=200mA 1.00 V VF IF=400mA 1.25 V CT VR=0, f=1.0MHz 35 pF trr IR=IF=30mA, Irr=3.0mA, RL=100Ω IR=IF=10mA, Irr=3.0mA, RL=100Ω 60 ns 50 ns trr 120 R4 (25-January 2010) CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD5001 CMPD5001S LEAD CODE: 1) Anode 2) No Connection 3) Cathode LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: DA2 MARKING CODE: D49 R4 (25-January 2010) w w w. c e n t r a l s e m i . c o m