LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor C1 E1 C2 5 B1 2 10mA B1 BOTH SIDES 500mW 4.3mW/°C E1 E2 7 C2 B2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS318 ∆re Log Conformance 1.5 MAX. BVCBO Collector-Base Breakdown Voltage 25 MIN. V IC = 10µA IE = 0 BVCEO Collector to Emitter Voltage 25 MIN. V IC = 10µA IB = 0 BVEBO Emitter-Base Breakdown Voltage 6.2 MIN. V IE = 10µA IC = 0 BVCCO Collector to Collector Voltage 45 MIN. V IC = 10µA IE = 0 hFE DC Current Gain VCE = 5V DC Current Gain IC = 100µA VCE = 5V hFE DC Current Gain MIN. MAX. MIN. MAX. MIN. IC = 10µA hFE 150 600 150 600 150 IC = 1mA VCE = 5V VCE(SAT) Collector Saturation Voltage 0.25 MAX. UNITS Ω V CONDITIONS IC= 10-100-1000µA VCE = 5V NOTE 2 IC = 1mAIB = 0.1 mA ICBO Collector Cutoff Current 0.2 MAX. nA IE = 0 VCB = 20V IEBO Emitter Cutoff Current 0.2 MAX. nA IC = 0 VEB = 3V VCB = 3V COBO Output Capacitance 2 MAX. pF IE = 0 CC1C2 Collector to Collector Capacitance 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 0.5 MAX. nA VCC = ±45V fT Current Gain Bandwidth Product 200 MIN. MHz IC = 1mA VCE = 5V NF Narrow Band Noise Figure 3 MAX. dB IC = 100µA VCE = 5V BW = 200Hz f=1KHz RG = 10 KΩ Linear Integrated Systems E2 6 B2 1 C1 -65°C to +200°C +150°C ONE SIDE 250mW 2.3mW/°C 3 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS318 Base Emitter Voltage Differential 0.4 |VBE1-VBE2| 1 ∆|(VBE1-VBE2)|/°C |IB1- IB2| |∆(IB1-IB2)|/°C TYP. MAX. UNITS mV mV µV/°C 1 TYP. 5 MAX. Base Current Differential 10 MAX. nA IC = 10µA Base Current Differential 0.5 MAX. nA/°C IC = 10µA TA = -55°C TA = -55°C DC Current Gain Differential 5 TO-71 TYP. 0.230 DIA. 0.209 0.030 MAX. 0.150 0.115 6 LEADS 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 VCE = 5V VCE = 5V to +125°C VCE = 5V P-DIP MAX. 0.040 0.165 0.185 MIN. 0.500 0.016 0.021 DIM. B +125°C 0.320 (8.13) 0.290 (7.37) 0.335 0.370 0.016 0.019 DIM. A VCE = 5V to IC = 10µA TO-78 Six Lead 0.195 DIA. 0.175 % VCE = 5V IC = 10 µA Base Emitter Voltage Differential Change with Temperature Change with Temperature hFE1/hFE2 CONDITIONS IC = 10 µA SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 1 8 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 45° 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261