NTGD1100L, STGD1100L Power MOSFET 8 V, ±3.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF www.onsemi.com V(BR)DSS RDS(on) TYP 8.0 V ±3.3 A 55 m @ −2.5 V 80 m @ −1.8 V SIMPLIFIED SCHEMATIC 4 2,3 Q2 Features • • • • • • • ID MAX 40 m @ −4.5 V Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 2000 V These Devices are Pb−Free and are RoHS Compliant 6 Q1 5 1 MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Input Voltage (VDSS, P−Ch) ON/OFF Voltage (VGS, N−Ch) Continuous Load Current Steady (Note 1) State TA = 25°C Power Dissipation (Note 1) TA = 25°C Steady State Pulsed Load Current Symbol Value Unit VIN 8.0 V VON/OFF 8.0 V IL ±3.3 A ±2.4 TA = 85°C PD TA = 85°C tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) ESD Rating, MIL−STD−883D HBM (100 pF, 1.5 k) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) D1/G2 6 1 TSOP−6 CASE 318G STYLE 11 0.43 ILM ±10 A 1 S1 TJ, TSTG −55 to 150 °C IS −1.0 A ESD 2.0 kV TL 260 °C TZ M G 2 3 D2 D2 = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). S2 4 TZ M G G W 0.83 G1 5 Package Shipping† NTGD1100LT1G TSOP−6 3000 / Tape & Reel (Pb−Free) STGD1100LT1G TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. 11 1 Publication Order Number: NTGD1100L/D NTGD1100L, STGD1100L THERMAL RESISTANCE RATINGS Rating Symbol Max Unit Junction−to−Ambient – Steady State (Note 2) RJA 150 °C/W Junction−to−Foot – Steady State (Note 2) RJF 50 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Q2 Drain−to−Source Breakdown Voltage VIN VGS2 = 0 V, ID2 = −250 A 8.0 Forward Leakage Current IFL VGS1 = 0 V, VDS1 = 8.0 V Typ Max Unit OFF CHARACTERISTICS V TJ = 25°C 1.0 TJ = 125°C 10 Q2 Gate−to−Source Leakage Current IGSS VDS2 = 0 V, VGS2 = ±8.0 V Q2 Diode Forward On−Voltage VSD IS = −1.0 A, VGS2 = 0 V −0.7 A ±100 nA −1.0 V ON CHARACTERISTICS Voltage ON/OFF VON/OFF Q1 Gate Threshold Voltage 1.5 8.0 V VGS1 = VDS1, ID = 50 A 0.6 1.2 V VGS2 = VDS2, ID = 250 A 1.8 VGS1 Input Voltage VIN Q2 Drain−to−Source On Resistance RDS(on) VON/OFF = 1.5 V, IL = 1.0 A 8.0 V VIN = 4.5 V 40 55 m VIN = 2.5 V 55 70 80 140 VIN = 1.8 V Load Current IL VDROP ≤ 0.2 V, VIN = 5.0 V, VON/OFF = 1.5 V 1.0 VDROP ≤ 0.2 V, VIN = 2.5 V, VON/OFF = 1.5 V 1.0 VDROP ≤ 0.2 V, VIN = 1.8 V, VON/OFF = 1.5 V 1.0 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4 VIN 2,3 VOUT Q2 R1 C1 6 ON/OFF 6 5 CO LOAD Q1 1 CI R2 R2 GND Figure 1. Load Switch Application Components Description Values R1 Pullup Resistor Typical 10 k to 1.0 M R2 Optional Slew−Rate Control Typical 0 to 100 k C0 Output Capacitance Usually < 1.0 F C1 Optional In−Rush Current Control Typical ≤ 1000 pF www.onsemi.com 2 NTGD1100L, STGD1100L TYPICAL CHARACTERISTICS 0.300 0.400 0.350 0.250 0.200 0.250 VDROP, (V) VDROP, (V) 0.300 TJ = 125°C 0.200 0.150 TJ = 25°C TJ = 125°C 0.150 TJ = 25°C 0.100 0.100 0.050 0.050 0 0 0 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 IL, (A) IL, (A) Figure 3. VDROP vs. IL @ VIN = 4.5 V TJ = 125°C TJ = 25°C IL = 1.0 A VON/OFF = 1.5 to 8.0 V 0 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.50 0.48 0.46 0.44 0.42 0.40 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.15 0.14 IL = 1.0 A 0.13 VON/OFF = 1.5 to 8.0 V 0.12 0.11 0.10 VIN = 1.8 V 0.09 0.08 0.07 0.06 VIN = 5.0 V 0.05 0.04 0.03 0.02 0.01 0 −50 −25 0 25 50 75 100 125 VIN, (V) TJ, JUNCTION TEMPERATURE (°C) Figure 4. On Resistance vs. Input Voltage Figure 5. On Resistance Variation with Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 2. VDROP vs. IL @ VIN = 2.5 V 1.7 1.5 IL = 1.0 A VON/OFF = 1.5 to 8.0 V VIN = 5.0 V 1.3 1.1 VIN = 1.8 V 0.9 0.7 −50 −25 0 25 50 75 100 125 150 TJ, TEMPERATURE JUNCTION (°C) Figure 6. Normalized On Resistance Variation with Temperature www.onsemi.com 3 150 NTGD1100L, STGD1100L TYPICAL CHARACTERISTICS 60 60 IL = 1.0 A VON/OFF = 1.5 V C1 = 10 F C0 = 1.0 F 45 40 35 30 55 50 td(off) TIME (S) TIME (S) 55 50 tf 25 20 tr 15 10 0 1 2 3 4 5 45 40 35 30 tf 25 20 15 10 td(on) 5 0 td(off) IL = 1.0 A VON/OFF = 3.0 V C1 = 10 F C0 = 1.0 F tr 5 0 6 7 8 td(on) 0 1 2 3 R2 (k) 6 7 8 Figure 8. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 30 40 35 tf 25 30 tr tf 25 20 td(off) IL = 1.0 A VON/OFF = 1.5 V C1 = 10 F C0 = 1.0 F 15 10 TIME (S) TIME (S) 5 R2 (k) Figure 7. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW td(on) 20 td(off) 15 IL = 1.0 A VON/OFF = 3.0 V C1 = 10 F C0 = 1.0 F 10 tr 5 5 0 td(on) 0 0 1 2 3 4 5 6 7 0 8 1 2 3 4 5 6 7 8 R2 (k) R2 (k) Figure 9. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW RJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 4 Figure 10. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1E−03 Single Pulse 0.01 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION TIME, t (sec) Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad) www.onsemi.com 4 1E+03 NTGD1100L, STGD1100L PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D H 6 E1 5 ÉÉÉ 1 NOTE 5 2 4 L2 GAUGE PLANE E 3 L M b SEATING PLANE DETAIL Z e 0.05 C A c A1 DETAIL Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. DIM A A1 b c D E E1 e L L2 M MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2 RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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