Linear LS358 Log conformance monolithic dual pnp transistor Datasheet

LS358
LOG CONFORMANCE
MONOLITHIC DUAL
PNP
TRANSISTORS
Linear Integrated Systems
FEATURES
∆re ≤1Ω from ideal TYP.
LOG CONFORMANCE
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Collector Current
IC
C2
E1
5
B1
BOTH SIDES
500mW
4.3mW/°C
E1
E2
UNITS
Ω
7
C2
B2
26 X 29 MILS
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS358
∆re
Log Conformance
1.5
BOTTOM VIEW
CONDITIONS
IC= 10-100-1000µA
VCE = 5V
BVCBO
Collector-Base Breakdown Voltage
20
MIN.
V
IC = 10µA
IE = 0
BVCEO
Collector to Emitter Voltage
20
MIN.
V
IC = 10µA
IB = 0
BVEBO
Emitter-Base Breakdown Voltage
6.2
MIN.
V
IE = 10µA
IC = 0
V
IC = 10µA
IE = 0
IC = 10µA
VCE = 5V
IC = 100µA
VCE = 5V
IC = 1mA
VCE = 5V
BVCCO
Collector to Collector Voltage
45
MIN.
hFE
DC Current Gain
hFE
DC Current Gain
MIN.
MAX.
MIN.
MAX.
MIN.
NOTE 2
hFE
DC Current Gain
100
600
100
600
100
VCE(SAT)
Collector Saturation Voltage
0.5
MAX.
V
IC = 1mAIB = 0.1 mA
ICBO
Collector Cutoff Current
0.2
MAX.
nA
IE = 0
IEBO
Emitter Cutoff Current
0.2
MAX.
nA
IC = 0
VEB = 3V
COBO
Output Capacitance
2
MAX.
pF
IE = 0
VCB = 5V
CC1C2
Collector to Collector Capacitance
2
MAX.
pF
VCC = 0
IC1C2
Collector to Collector Leakage Current
0.5
MAX.
nA
VCC = ±45V
fT
Current Gain Bandwidth Product
200
MIN.
MHz
IC = 1mA
NF
Narrow Band Noise Figure
3
MAX.
dB
Linear Integrated Systems
E2
6 B2
1
C1
-65°C to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
3
B1 2
10mA
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
C1
VCB = 15V
VCE = 5V
IC = 100µA
VCE = 5V
BW = 200Hz
f=1KHz
RG = 10 KΩ
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
PARAMETER
LS358
Base Emitter Voltage Differential
0.4
TYP.
|VBE1-VBE2|
1
MAX.
UNITS CONDITIONS
mV
IC = 10 µA
mV
VCE = 5V
VCE = 5V
Base Emitter Voltage Differential
1
TYP.
µV/°C
Change with Temperature
10
MAX.
µV/°C
TA= -55°C to +125°C
|IB1- IB2|
Base Current Differential
5
MAX.
nA
I = 10µA
V
= 5V
|∆(IB1- IB2)|/°C
Base Current Differential
0.5
MAX.
nA/°C
I = 10 µA
V
= 5V
∆|(VBE1-VBE2)|/°C
DC Current Gain Differential
5
TO-71
TYP.
%
0.230
DIA.
0.209
0.030
MAX.
0.150
0.115
6 LEADS
CE
C
CE
I = 10µA
V
C
CE
TO-78
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
0.320 (8.13)
0.290 (7.37)
0.335
0.370
MAX.
0.040 0.165
0.185
0.016
0.019
DIM. A
MIN. 0.500
0.016
0.021
DIM. B
= 5V
P-DIP
Six Lead
0.195
DIA.
0.175
C
TA= -55°C to +125°C
Change with Temperature
hFE1/hFE2
IC= 10 µA
SEATING
PLANE
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
5
6
1
8
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
45°
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
C1
B1
E1
N/C
1
2
3
8 C2
7 B2
6 E2
4
5 N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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