IXYS IXSH45N100 Low vce(sat) igbt - short circuit soa capability Datasheet

Low VCE(sat) IGBT
IXSH 45N100
IXSM 45N100
VCES
IC25
VCE(sat)
= 1000 V
= 75 A
= 2.7 V
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1000
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1000
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
45
A
ICM
TC = 25°C, 1 ms
180
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7 W
Clamped inductive load, L = 30 mH
ICM = 90
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
10
ms
PC
TC = 25°C
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Mounting torque
Weight
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
Symbol
Test Conditions
BVCES
IC
= 3 mA, VGE = 0 V
1000
VGE(th)
IC
= 4 mA, VCE = VGE
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
G
C
E
TO-204 AE (IXSM)
C
300
Md
TO-247 AD (IXSH)
V
8
V
250
1
mA
mA
±100
nA
2.7
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power density
93013E (12/96)
1-4
IXSH 45N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VGE = 15 V, VCE = 10 V
C ies
25
S
195
A
4150
pF
300
pF
C res
60
pF
Qg
165
260
nC
40
60
nC
80
200
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
20
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
td(on)
tfi
80
ns
150
ns
400
ns
1000
1500
ns
IXSM 45N100
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
15
mJ
Inductive load, TJ = 125°C
100
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
t ri
IC = IC90, VGE = 15 V, L = 100 mH
300
ns
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
Eon
VCE = 0.8 VCES, RG = 2.7 W
5.4
mJ
td(off)
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
550
900
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
2200
2900
ns
N
1.5 2.49
0.087 0.102
tfi
Eoff
25
RthJC
RthCK
mJ
TO-204 AE (IXSM) Outline
0.42 K/W
0.25
K/W
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
38.61 39.12
- 22.22
6.40 11.40
1.45 1.60
1.52 3.43
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 26.66
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
1.520 1.540
- 0.875
0.252 0.449
0.057 0.063
0.060 0.135
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
2-4
IXSH 45N100
Fig.1 Saturation Characteristics
70
VGE = 15V
Fig.2 Output Characterstics
300
13V
TJ = 25°C
11V
60
250
TJ = 25°C
VGE = 15V
IC - Amperes
50
IC - Amperes
IXSM 45N100
40
30
20
200
13V
150
100
11V
9V
50
10
9V
7V
0
0
0
1
2
3
4
0
5
2
4
6
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.8
TJ = 25°C
9
1.6
VCE(sat) - Normalized
7
VCE - Volts
IC = 90A
VGE = 15V
8
6
5
4
IC = 90A
3
IC = 45A
2
0
8
9
10
11
12
13
1.4
IC = 45A
1.2
1.0
IC = 22.5A
0.8
IC = 22.5A
1
14
0.6
-50
15
-25
0
VGE - Volts
90
50
TJ = 25°C
TJ = 125°C
20
TJ = - 40°C
10
0
4
5
6
7
8
9
10 11 12 13 14 15
VGE - Volts
© 2000 IXYS All rights reserved
BV / V(th) - Normalized
60
30
75
100 125 150
1.3
70
40
50
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
VCE = 10V
80
25
TJ - Degrees C
Fig.5 Input Admittance
IC - Amperes
10 12 14 16 18 20
VCE - Volts
VCE - Volts
10
8
1.2
1.1
VGE(th)
IC = 4mA
1.0
0.9
BVCES
IC = 3mA
0.8
0.7
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXSH 45N100
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
3000
60
IC = 45A
30
2000
20
1750
10
1500
40
60
80
0
100
2400
35
tfi
2200
30
Eoff
2000
25
1800
0
10
IC - Amperes
30
40
20
50
Fig.10 Turn-Off Safe Operating Area
100
IC = 45A
VCE = 500V
12
TJ = 125°C
10
Ic - Amperes
VGE - Volts
20
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
Eoff - millijoules
tfi
2250
Eoff - millijoules
40
tfi - nanoseconds
50
2500
20
40
TJ = 125°C
RG = 10W
0
Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
2600
Eoff
TJ = 125°C
2750
tfi - nanoseconds
Fig.8
IXSM 45N100
9
6
RG = 2.7W
dV/dt < 6V/ns
1
0.1
3
0
0.01
0
50
100
150
200
0
200
Qg - nanocoulombs
400
600
800
1000
VCE - Volts
Fig.11 Transient Thermal Impedance
1
ZthJC (K/W)
D=0.5
0.1 D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
© 2000 IXYS All rights reserved
4-4
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