isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP253 FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage: VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pluse 110 A PD Total Dissipation @TC=25℃ 180 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP253 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX UNIT 150 2 V 4 V VGS= 10V; ID= 17A 0.12 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 150V; VGS= 0 250 μA VSD Forward On-Voltage IS= 33A; VGS= 0 2.0 V · isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn