ISC IRFP253 Isc n-channel mosfet transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFP253
FEATURES
·Drain Current –ID= 27A@ TC=25℃
·Drain Source Voltage: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.12Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
27
A
IDM
Drain Current-Single Pluse
110
A
PD
Total Dissipation @TC=25℃
180
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Storage Temperature
-55~150
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.7
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
30
℃/W
isc website:www.iscsemi.cn
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFP253
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on)
Drain-Source On-Resistance
IGSS
MIN
MAX
UNIT
150
2
V
4
V
VGS= 10V; ID= 17A
0.12
Ω
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 150V; VGS= 0
250
μA
VSD
Forward On-Voltage
IS= 33A; VGS= 0
2.0
V
·
isc website:www.iscsemi.cn
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isc & iscsemi is registered trademark
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