Kexin D1220 Silicon npn epitaxial transistor Datasheet

Transistors
SMD Type
Silicon NPN Epitaxial Transistor
2SD1220
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Features
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Power Amplifier Applications
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
6
V
IC
1.5
A
IB
1
A
Collector current
Base current
Collector power dissipation
Ta = 25
PC
1
W
10
Tc = 25
Junction temperature
Storage temperature range
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = 150 V, IE = 0
1.0
ìA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
1.0
ìA
V (BR) CEO
IC = 10 mA, IB = 0
150
VCE = 5 V, IC = 200 mA
60
Collector-emitter breakdown voltage
DC current gain
hFE
Collector-emitter saturation voltage
VCE (sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
Testconditons
Min
Typ
V
320
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 5 mA
0.5
VCE = 5 V, IC = 200 mA
20
VCB = 10 V, IE = 0, f = 1 MHz
1.5
V
0.8
V
100
13
MHz
20
pF
hFE Classification
D1220
Marking
Rank
R
O
Y
hFE
60 to 120
100 to 200
160 to 320
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