JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 CESDBLC5V0D9 Plastic-Encapsulate Diodes Bi-direction ESD Protection Diode DESCRIPTION SOD-923 Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. FEATURES Bi-directional ESD protection of one line Excellent package:0.8mm×0.6mm×0.38mm Low capacitance: 12pF(Typ.) Fast response time Low reverse stand−off voltage: 5.0V JESD22-A114-B ESD Rating of class 3B per human Low reverse clamping voltage Low leakage current body model IEC 61000-4-2 Level 4 ESD protection APPLICATIONS Computers and peripherals Subscriber identity module(SIM) card protection PAD Portable electronics Audio and video equipment Other electronics equipments communi- Cellular handsets and accessories cation systems MARKING H = Device code Front side www.cj-elec.com 1 C,May,2014 CHANGJIANG ELEC.TECH. CESDBLC5V0D9 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol IEC 61000-4-2 ESD Voltage Air Model Contact Model JESD22-A114-B ESD Voltage Per Human Body Model ESD Voltage VESD(1) ±25 ±16 kV ±0.4 (2) 50 W (2) 5 A PPP Peak Pulse Current Unit ±25 Machine Model Peak Pulse Power Limit IPP Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction Temperature Tj 150 ℃ Tstg -55 ~ +150 ℃ Storage Temperature Range (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. ESD standards compliance IEC61000-4-2 Standard JESD22-A114-B Standard Contact Discharge Air Discharge ESD Class Human Body Discharge V Level Test Voltage kV Level Test Voltage kV 0 0～249 1 2 1 2 2 4 2 4 1A 1B 1C 250～499 500～999 1000～1999 3 6 3 8 4 8 4 15 2 3A 3B 2000～3999 4000～7999 8000～15999 ESD pulse waveform according to IEC61000-4-2 www.cj-elec.com 8/20μs pulse waveform according to IEC 61000-4-5 2 C,May,2014 CHANGJIANG ELEC.TECH. CESDBLC5V0D9 ELECTRICAL PARAMETER Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage V-I characteristics for a Bi-directional TVS ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse stand off voltage Reverse leakage current Breakdown voltage Clamping voltage Junction capacitance Symbol Test conditions Min Typ （1） VRWM IR V(BR) （2） VC CJ VRWM=5V IT=1mA 5.8 IPP=5A VR=0V,f=1MHz 12 Max Unit 5 V 0.1 μA 7.8 V 10 V 15 pF (1).Other voltages available upon request. (2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 www.cj-elec.com 3 C,May,2014 CHANGJIANG ELEC.TECH. CESDBLC5V0D9 TYPICAL CHARACTERISTICS Reverse Capacitance Characteristics Characteristics 100 15 Pulsed Ta=25℃ 12 50 JUNCTION CAPACITANCE CJ (pF) (mA) REVERSE CURRENT IR f=1MHz Ta=100℃ 75 Ta=25℃ 25 0 -25 9 6 -50 3 -75 -100 0 -8 -6 -4 -2 0 2 REVERSE VOLTAGE VC —— VR 4 6 8 0 (V) 1 2 3 REVERSE VOLTAGE 4 5 VR 6 (V) IPP 10 Ta=25℃ tp=8/20us CLAMPING VOLTAGE VC(V) 9 8 7 6 5 1 2 3 4 5 REVERSE PEAK PULSE CURRENT IPP (A) www.cj-elec.com 4 C,May,2014 CHANGJIANG ELEC.TECH. CESDBLC5V0D9 PACKAGE OUTLINE AND PAD LAYOUT INFORMATION 62'93DFNDJH2XWOLQH'LPHQVLRQV Dimensions In Millimeters Min. Max. 0.350 0.430 0.000 0.050 0.170 0.270 0.150 0.550 0.650 0.900 1.100 0.750 0.850 7° REF. Symbol A A1 b c D E E1 θ Dimensions In Inches Min. Max. 0.014 0.017 0.000 0.002 0.007 0.011 0.006 0.022 0.026 0.035 0.043 0.030 0.033 7° REF. 62'96XJJHVWHG3DG/D\RXW www.cj-elec.com 5 C,May,2014 CHANGJIANG ELEC.TECH. CESDBLC5V0D9 TAPE AND REEL INFORMATION www.cj-elec.com 6 C,May,2014