Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.1 dB Drain Efficiency — 32% ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 68% Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +66 Vdc Gate - Source Voltage VGS - 0.5, + 12 Vdc Maximum Operation Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW Case Temperature 79°C, 10 W CW RθJC 1.0 1.1 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9045NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test) VGS(Q) 2.3 3.1 3.8 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) 0.05 0.23 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.02 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 81 — pF Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 21 22.1 25 dB Drain Efficiency ηD 30.5 32 — % ACPR — - 46 - 44 dBc IRL — - 19 -9 dB Adjacent Channel Power Ratio Input Return Loss (continued) MRFE6S9045NR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency ηD — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 45 W, f = 920 - 960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 68 — % IRL — - 12 — dB P1dB — 52 — W Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 48 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 10 — Gain Flatness in 35 MHz Bandwidth @ Pout = 10 W Avg. GF — 0.72 — dB Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.011 — dB/°C ΔP1dB — 0.006 — dBm/°C Output Power Variation over Temperature ( - 30°C to +85°C) MRFE6S9045NR1 RF Device Data Freescale Semiconductor 3 B2 B1 R1 VBIAS + + C16 C17 C18 R3 + R2 C15 RF INPUT C10 L2 VSUPPLY + C7 L1 C8 Z10 Z11 Z12 Z13 Z14 Z15 C11 C12 C13 RF Z16 OUTPUT C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C14 C9 C1 DUT C3 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ 0.057″ x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ x 0.525″ C4 C6 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.095″ x 0.065″ Microstrip 0.800″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip 0.325″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRFE6S9045NR1 Test Circuit Schematic Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair Rite B2 Ferrite Bead 2743021447 Fair Rite C1, C7, C10, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C4, C12 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C3 15 pF Chip Capacitor ATC100B150JT500XT ATC C5, C6 12 pF Chip Capacitors ATC100B120JT500XT ATC C8, C9 13 pF Chip Capacitors ATC100B130JT500XT ATC C11 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC C13 0.6 - 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C15, C16, C17 10 μF, 35 V Tantalum Capacitors T491D106K035AT Kemet C18 220 μF, 50 V Electrolytic Capacitor EMVY500ADA221MJA0G Nippon Chemi - con L1, L2 12.5 nH Inductors A04T - 5 Coilcraft R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW120656001FKEA Vishay R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay MRFE6S9045NR1 4 RF Device Data Freescale Semiconductor C15 R2 C18 R3 R1 VGG VDD B1 C16 C17 B2 C7 C10 L2 C5 L1 C1 C4 C3 C6 CUT OUT AREA C8 C2 C14 C9 C11 C13 C12 TO−270/272 Surface / Bolt down Figure 2. MRFE6S9045NR1 Test Circuit Component Layout MRFE6S9045NR1 RF Device Data Freescale Semiconductor 5 Gps, POWER GAIN (dB) 22 32 ηD Gps 21 30 VDD = 28 Vdc Pout = 10 W (Avg.) IDQ = 350 mA N−CDMA IS−95 Pilot Sync, Paging Traffic Codes 8 Through 13 20 19 IRL −30 −40 18 −50 ACPR 17 −60 ALT1 16 −70 800 820 840 860 880 900 920 940 0 −5 −10 −15 −20 960 IRL, INPUT RETURN LOSS (dB) 34 ACPR (dBc), ALT1 (dBc) 23 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 22 40 Gps Gps, POWER GAIN (dB) 21 30 VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 20 19 −20 ACPR −30 18 −40 17 −50 16 −60 ALT1 IRL 15 800 820 840 860 −70 880 900 920 940 0 −5 −10 −15 960 IRL, INPUT RETURN LOSS (dB) 50 ηD ACPR (dBc), ALT1 (dBc) 23 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg. 24 −10 437.5 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 525 mA Gps, POWER GAIN (dB) 23 350 mA 22 262.5 mA 21 175 mA 20 19 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 18 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 IDQ = 175 mA −30 −40 262.5 mA 350 mA −50 437.5 mA 525 mA −60 17 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 200 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6S9045NR1 6 RF Device Data Freescale Semiconductor 0 −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz f2 = 880.1 MHz, Two−Tone Measurements −20 −30 −40 3rd Order −50 −60 5th Order −70 7th Order −80 1 10 100 VDD = 28 Vdc, Pout = 48 W (PEP), IDQ = 350 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 IM3−L IM3−U −30 −40 IM5−L −50 IM7−L IM7−U IM5−U −60 −70 200 1 10 100 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 56 Ideal Pout, OUTPUT POWER (dBm) 55 P6dB = 49.21 dBm (83.36 W) 54 53 P3dB = 48.40 dBm (69.18 W) 52 51 P1dB = 47.38 dBm 50 (54.7 W) 49 Actual 48 VDD = 28 Vdc, IDQ = 350 mA, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 880 MHz 47 46 24 25 26 27 28 29 30 31 32 33 34 Pin, INPUT POWER (dBm) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 ACPR Gps ηD ALT1 1 10 −5 −10 −15 −20 25_C −25 85_C −30 −30_C −35 25_C −40 85_C −30_C −45 −50 TC = −30_C −55 −60 85_C −65 25_C −70 −75 100 −30_C VDD = 28 Vdc, IDQ = 350 mA f = 880 MHz, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 25_C 85_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRFE6S9045NR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 22 25_C 25_C 85_C Gps 21 60 20 50 19 40 18 30 20 VDD = 28 Vdc IDQ = 350 mA f = 880 MHz ηD 16 22 21 20 19 28 V 10 VDD = 24 V 0 100 15 1 IDQ = 350 mA f = 880 MHz 70 85_C 17 23 80 −30_C Gps, POWER GAIN (dB) TC = −30_C ηD, DRAIN EFFICIENCY (%) 23 10 32 V 18 0 Pout, OUTPUT POWER (WATTS) CW 20 40 60 80 Pout, OUTPUT POWER (WATTS) CW 100 Figure 12. Power Gain versus Output Power Figure 11. Power Gain and Drain Efficiency versus CW Output Power MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 32%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRFE6S9045NR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW ... . ............... ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ........... ...... .......... ...... ... ........... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRFE6S9045NR1 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 910 MHz f = 850 MHz Zsource Zload f = 910 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 850 0.42 + j0.30 3.05 + j1.27 865 0.42 + j0.44 3.16 + j1.33 880 0.45 + j0.60 3.31 + j1.33 895 0.48 + j0.74 3.43 + j1.20 910 0.50 + j0.85 3.35 + j1.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRFE6S9045NR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9045NR1 RF Device Data Freescale Semiconductor 11 MRFE6S9045NR1 12 RF Device Data Freescale Semiconductor MRFE6S9045NR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 Description • Initial Release of Data Sheet MRFE6S9045NR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRFE6S9045NR1 Document RF DeviceNumber: Data MRFE6S9045N Rev. 0, 10/2007 Freescale Semiconductor 15