AH31 High Dynamic Range IF Amplifier Product Features Product Description 50 – 1000 MHz 19 dB Gain +22 dBm P1dB +42 dBm OIP3 1.9 dB Noise Figure Single Voltage Supply (+5 V) Lead-free/Green/RoHS-compliant SOT-89 Package MTTF > 1000 years Applications High linearity and low-noise amplifier following a mixer High performance amplifier in IF path of TX/RX systems The AH31 is a high dynamic range amplifier in a lowcost surface-mount package. The combination of low noise figure, high gain, and high output IP3 is ideal as an IF amplifier for receiver and transmitter applications. 4 1 2 3 RF IN GND RF OUT Function Input Output / Bias Ground The MMIC amplifier based on GaAs MESFET technology can be configured for IF and RF applications with various current and next generation wireless technologies. Pin No. 1 3 2, 4 Typical Performance (4) Units Min Operational Bandwidth Test Frequency Gain (3) Output P1dB Output IP3 (2) Supply Voltage Operating Current Range GND The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 C and is available in the environmentally-friendly lead-free/green /RoHS-compliant SOT-89 package. All devices are 100% RF & DC tested. Specifications (1) Parameter Functional Diagram MHz MHz dB dBm dBm V mA Typ 50 +37 120 240 19 +22 +42 +5 150 Max Parameter 1000 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure 180 Units Typical MHz dB dB dB dBm dBm dB 75 19.5 -21 -17 +22 +42 2.6 170 19.2 -13 -14 +21 +42 2.3 240 19.3 -19 -13 +22 +42 2.2 500 18.4 -13 -9.2 +21 +41 1.9 900 16.6 -14 -9 +20 +41 2.2 1. Test conditions : T = 25 ºC, Vdd = +5 V, 50 system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Typical parameters reflect performance in an application circuit. Not Recommended for New Designs Recommended Replacement Part: TQP3M9009 Absolute Maximum Rating Parameter Rating Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth -55 to +150 C +6 V 4 dB above Input P1dB +160 C 59 C / W 6 Junction Temperature for >10 hours MTTF Ordering Information Part No. Description AH31-G High Dynamic Range IF Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 1 of 7 May 2012 AH31 High Dynamic Range IF Amplifier Typical Device Data S-parameters (Vd = +5 V, Id = 150 mA, unmatched 50 system). 0.8 6 0. Swp Max 1GHz 0. 4 0. 4 0 3. 0 3. 0 4. 0 4. 5.0 5.0 0.2 0.2 20 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 18 10.0 10.0 S21 -10.0 -3 .0 Swp Min 0.01GHz -1.0 -0.8 -0 .6 Swp Min 0.01GHz .0 -2 .4 -0 .0 -2 1 -0.8 0.8 -1.0 0.4 0.6 Frequency (GHz) -0 .6 0.2 -3 .0 -4 .0 -5. 0 0 2 -0. -4 .0 -5. 0 .4 -0 14 -10.0 2 -0. 16 S(2,2) AH31_H005_1_5 S(2,2) Schematic 1 2. 0 S(1,1) Schematic 1 2. 0 6 0. 1.0 1.0 0.8 S22 S(1,1) AH31_H005_1_5 Swp Max 1GHz DB(MSG()) AH31_H005_1_5 Maximum Stable Gain 22 S21 and MSG (dB) S11 DB(|S(2,1)|) AH31_H005_1_5 Gain and Max. Stable Gain 24 Notes: Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads. The amplifier requires a matching network at the input for proper operation. The amplifier is intrinsically well matched at the output and ideally should “look” into 50 . Any deviation from this can affect the linearity IP3 performance for the device. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 250 – 1000 MHz, with markers placed at 0.25 – 1.0 GHz in 0.25 GHz increments. Application Circuit PC Board Layout Circuit Board Material: .014” FR-4, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper Microstrip line details: width = .024”, spacing = .036” Typical Device Data S-Parameters (VD = +5 V, ID = 150 mA, T = 25 C, calibrated to device leads) Freq (MHz) 50 100 200 300 400 500 600 700 800 900 1000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -2.72 -2.77 -2.81 -2.87 -2.87 -2.95 -2.91 -2.99 -3.03 -3.14 -3.22 -5.46 -9.52 -18.01 -26.32 -35.19 -43.58 -51.71 -60.03 -67.73 -75.45 -82.88 17.01 16.94 16.86 16.74 16.64 16.50 16.40 16.21 16.05 15.81 15.55 175.91 172.89 166.99 161.33 155.16 149.45 143.72 138.07 132.16 126.99 121.64 -28.54 -28.42 -27.86 -27.14 -26.32 -25.45 -24.66 -23.89 -23.27 -22.71 -22.17 6.89 8.53 14.09 18.38 21.01 22.42 22.73 21.29 19.94 17.74 15.73 -7.44 -7.56 -7.59 -7.63 -7.83 -7.92 -8.00 -8.31 -8.46 -8.77 -8.95 -5.46 -7.93 -13.42 -19.94 -26.57 -32.04 -38.12 -45.01 -50.89 -57.30 -63.63 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 2 of 7 May 2012 AH31 High Dynamic Range IF Amplifier Application Circuit: 65 – 85 MHz (AH31-PCB75) Typical Performance Frequency 75 MHz Gain 19.5 dB S11 -21 dB S22 -17 dB Output P1dB +22 dBm Output IP3 +42 dBm Noise Figure 2.6 dB Bias +5 V @ 150 mA VS = +5 V C5 .018 F RF IN L2 330 nH C1 L1 .018 F 220 nH RF OUT AH31 R1 5.1 R2 0 C4 .018 F C3 12 pF Notes: 1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier. 3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit. 4. C2 (from the silkscreen) is not utilized in this application circuit. S-Parameters Noise Figure 20 Output IP3 0 3.5 46 -5 3 44 S22 17 -15 16 -20 15 65 75 85 2.5 2 1.5 1 -25 55 Output IP3 (dBm) -10 S11 S11, S22 (dB) Gain (dB) 18 Noise Figure (dB) S21 19 40 38 36 55 95 42 65 75 85 95 55 65 75 Frequency (MHz) Frequency (MHz) 85 95 180 190 Frequency (MHz) Application Circuit: 155 – 185 MHz (AH31-PCB170) Typical Performance Frequency 170 MHz Gain 19.2 dB S11 -13 dB S22 -14 dB Output P1dB +21 dBm Output IP3 +42 dBm Noise Figure 2.3 dB Bias +5 V @ 150 mA VS = +5 V C5 .018 F RF IN C1 1000 pF L2 330 nH L1 82 nH RF OUT AH31 R1 3.3 R2 0 C3 4.7 pF C4 1000 pF Notes: 1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier. 3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit. 4. C2 (from the silkscreen) is not utilized in this application circuit. S-Parameters Noise Figure S11 18 17 46 -5 2.0 44 -10 S22 -15 16 15 150 2.5 -20 160 170 180 -25 190 Frequency (MHz) Output IP3 (dBm) Gain (dB) 19 Output IP3 0 S11, S22 (dB) S21 Noise Figure (dB) 20 1.5 1.0 0.5 0.0 150 160 170 180 190 42 40 38 36 150 Frequency (MHz) 160 170 Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 3 of 7 May 2012 AH31 High Dynamic Range IF Amplifier Application Circuit: 220 – 260 MHz (AH31-PCB240) Typical Performance Frequency 240 MHz Gain 19.3 dB S11 -19 dB S22 -12.5 dB Output P1dB +22 dBm Output IP3 +42 dBm Noise Figure 2.2 dB Bias +5 V @ 150 mA VS = +5 V C5 .018 F RF IN C1 1000 pF L2 220 nH L1 68 nH RF OUT AH31 R2 0 R1 3.3 C4 1000 pF C3 2.2 pF Notes: 1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier. 3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit. 4. C2 (from the silkscreen) is not utilized in this application circuit. S-Parameters Noise Figure vs Frequency 20 P1dB vs Frequency 0 3.5 24 -5 3.0 22 17 -15 S11 16 -20 P1dB (dBm) -10 S22 S11, S22 (dB) Gain (dB) 18 Noise Figure (dB) S21 19 2.5 2.0 1.5 220 240 1.0 220 -25 280 260 230 OIP3 vs Frequency 240 250 260 38 36 250 260 Frequency (MHz) +85 C 240 250 260 Output IP3 vs. Output Power 25C, Frequency = 240, 241 MHz 50 42 40 38 36 45 40 35 30 25 34 34 240 230 +25 C Frequency (MHz) Output IP3 (dBm) 40 230 14 220 Frequency = 240, 241 MHz, Pout=+10 dBm/tone 44 Output IP3 (dBm) Output IP3 (dBm) -40 C +85 C Output IP3 vs. Temperature 25C, Freq. spacing = 1 MHz, Pout=+10 dBm/tone 42 220 +25 C Frequency (MHz) Frequency (MHz) 44 18 16 -40 C 15 200 20 -40 -20 0 20 40 60 80 0 Temperature (C) 2 4 6 8 10 Output Power (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 4 of 7 May 2012 AH31 High Dynamic Range IF Amplifier Application Circuit: 450 – 550 MHz (AH31-PCB500) Typical Performance Frequency 500 MHz Gain 18.4 dB S11 -12.7 dB S22 -9.2 dB Output P1dB +21 dBm Output IP3 +41 dBm Noise Figure 1.9 dB Bias +5 V @ 150 mA VS = +5 V C5 .018 F L2 150 nH L1 22 nH C1 RF IN 1000 pF RF OUT AH31 R2 8.2 C4 1000 pF Notes: 1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier. 3. R1, C2, and C3 (from the silkscreen) are not utilized in this application circuit. S-Parameters Noise Figure 19 0 Output IP3 2.5 46 2.0 44 S22 17 -10 S11 16 15 450 475 -15 500 1.5 1.0 0.5 0.0 450 -20 550 525 Frequency (MHz) -5 S11, S22 (dB) Gain (dB) 18 Noise Figure (dB) S21 475 500 525 42 40 38 36 450 550 475 Frequency (MHz) Frequency (MHz) 500 525 550 Output IP3 (dBm) Reference Design: 900 MHz Typical Performance Frequency 900 MHz S21 - Gain 16.6 dB S11 -14 dB S22 -9 dB Output P1dB +20 dBm Output IP3 +41 dBm Noise Figure 2.2 dB Bias 5 V @ 150 mA VS = +5 V C5 .01 F C6 100 pF RF IN C1 100 pF L1 12 nH L2 AH31 39 nH RF OUT R2 10 C2 2.4 pF C4 100 pF Notes: 1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier. 3. R1 and C3 (from the silkscreen) are not utilized in this application circuit. S-Parameters Noise Figure 2.5 0 Gain (dB) -5 S22 15 -10 S11 14 13 800 -15 850 900 Frequency (MHz) 950 -20 1000 S11, S22 (dB) S21 16 Noise Figure (dB) 17 2.0 1.5 1.0 0.5 0.0 800 850 900 950 1000 Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 5 of 7 May 2012 AH31 High Dynamic Range IF Amplifier Broader Bandwidth Reference Designs The AH31 can be designed to achieve good performance over a broader frequency range (around one octave) by using an additional L-C matching network at the input. An equalization R-C network can also be added at the output to slightly flatten out the typical downward slope of the amplifier circuit. Reference Design: 36 - 56 MHz CAP ID=C5 C=10000 pF S-Parameters 21 0 PORT P=1 Z=50 Ohm SUBCKT ID=S1 NET="AH31" IND ID=L1 L=560 nH IND ID=C1 L=220 nH CAP ID=C2 C=47 pF IND ID=L2 L=560 nH Gain (dB) DB(|S(1,1)|) (R) PORT P=2 Z=50 Ohm CAP ID=C4 C=10000 pF CAP ID=C3 C=12 pF RES ID=R1 R=3.3 Ohm DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) 20 -5 19 -10 18 -15 17 -20 16 S11, S22 (dB) +5V -25 30 35 40 45 50 Frequency (MHz) 55 60 Reference Design: 45 - 90 MHz IND ID=C1 L=120 nH IND ID=L1 L=330 nH CAP ID=C2 C=33 pF IND ID=L2 L=330 nH 19 RES ID=R2 R=20 Ohm PORT P=2 Z=50 Ohm CAP ID=C4 C=10000 pF CAP ID=C3 C=10 pF 0 DB(|S(1,1)|) (R) Gain (dB) PORT P=1 Z=50 Ohm SUBCKT ID=S1 NET="AH31" S-Parameters CAP ID=C5 C=10000 pF CAP ID=C7 C=180 pF RES ID=R1 R=3.3 Ohm DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 18 -5 17 -10 16 -15 15 -20 14 S11, S22 (dB) +5 V -25 0.04 0.05 0.06 0.07 0.08 Frequency (GHz) 0.09 0.1 Reference Design: 65 - 165 MHz IND ID=C1 L=100 nH CAP ID=C2 C=15 pF IND ID=L1 L=180 nH CAP ID=C3 C=3.9 pF S-Parameters 20 IND ID=L2 L=330 nH SUBCKT ID=S1 NET="AH31" 0 DB(|S(1,1)|) (R) PORT P=2 Z=50 Ohm CAP ID=C4 C=10000 pF RES ID=R1 R=3.3 Ohm DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 19 -5 18 -10 17 -15 16 -20 15 S11, S22 (dB) PORT P=1 Z=50 Ohm CAP ID=C5 C=10000 pF S21 (dB) +5V -25 0.06 0.08 0.1 0.12 0.14 Frequency (GHz) 0.16 0.18 Reference Design: 80 - 200 MHz IND ID=C1 L=82 nH CAP ID=C1 C=12 pF IND ID=L1 L=150 nH CAP ID=C2 C=2.7 pF SUBCKT ID=S1 NET="AH31" IND ID=L2 L=330 nH CAP ID=C4 C=10000 pF RES ID=Rs1 R=3.3 Ohm S-Parameters 20 0 DB(|S(1,1)|) (R) PORT P=2 Z=50 Ohm DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 19 -5 18 -10 17 -15 16 -20 15 S11, S22 (dB) PORT P=1 Z=50 Ohm CAP ID=C5 C=10000 pF S21 (dB) +5V -25 0.06 0.08 0.1 0.12 0.14 0.16 Frequency (GHz) 0.18 0.2 0.22 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 6 of 7 May 2012 AH31 High Dynamic Range IF Amplifier AH31-G Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH31-G will be marked with an “AH31G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. AH31G XXXX-X ESD / MSL Information Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 1 at +260 C convection reflow JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 7 of 7 May 2012