HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 (Previous ADE-208-1541A) Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor 2SC5872 Outline RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6) Pin Arrangement 6 5 B1 6 4 E2 5 Q2 Q1 1 2 3 C1 Note: Marking is “Z”. Rev.2.00 Aug 10, 2005 page 1 of 8 B2 4 1 E1 2 C2 3 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1129E Absolute Maximum Ratings (Ta = 25°C) Item Ratings Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Q1 Q2 15 6 1.5 80 15 6 0.8 50 Total 200* 150 150 –55 to +150 –50 to +150 Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 200 *Value on PCB. (FR–4 (13 x13 x 0.635 mm)) 2 devices total 150 100 50 0 50 100 150 Ambient temperature Ta (°C) Rev.2.00 Aug 10, 2005 page 2 of 8 200 Unit V V V mA mW °C °C HTT1129E Q1 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Min 15 ⎯ ⎯ ⎯ 90 ⎯ Typ ⎯ ⎯ ⎯ ⎯ 120 0.50 Max ⎯ 0.1 0.1 0.1 140 0.65 Unit V µA µA µA ⎯ pF fT |S21|2 NF 2 7 ⎯ 4 11 1.7 ⎯ ⎯ 2.3 GHz dB dB Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Min 16 ⎯ ⎯ ⎯ 90 ⎯ Typ ⎯ ⎯ ⎯ ⎯ 120 0.25 Max ⎯ 0.1 0.1 0.1 140 0.35 Unit V µA µA µA ⎯ pF fT |S21|2 NF 8 13 ⎯ 10 16 1.0 ⎯ ⎯ 1.6 GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 6 V, RBE = infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Q2 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Rev.2.00 Aug 10, 2005 page 3 of 8 Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 6 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω HTT1129E Q1 Main Characteristics Typical Output Characteristics 25 160 µA 180 µA 140 µA 16 Collector Current IC (mA) Collector Current IC (mA) 20 Typical Forward Transfer Characteristics 120 µA 100 µA 12 80 µA 8 60 µA 40 µA 4 IB = 20 µA 1 0 2 3 4 5 VCE = 1 V 20 15 10 5 0 6 0.2 Collector to Emitter Voltage VCE (V) 100 100 10 Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio hFE VCE = 1 V 1.0 1.0 Emitter ground f = 1 MHz 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 Collector Current IC (mA) Collector to Base Voltage VCB (V) Gain Bandwidth Product vs. Collector Current Noise Figure vs. Collector Current 20 5 f = 1 GHz VCE = 1 V f = 900 MHz 16 VCE = 3 V 12 VCE = 2 V 8 4 Noise Figure NF (dB) Gain Bandwidth Product fT (GHz) 0.8 Reverse Transfer Capacitance vs. Collector to Base Voltage 200 1.0 0.6 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 0 0.1 0.4 4 3 2 1 VCE = 1 V 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 8 100 0 1 2 5 10 20 Collector Current IC (mA) 50 100 HTT1129E S21 Parameter vs. Collector Current 20 S21 Parameter |S21|2 (dB) f = 1 GHz 16 VCE = 2 V 12 VCE = 1 V 8 4 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 5 of 8 100 HTT1129E Q2 Main Characteristics Typical Forward Transfer Characteristics Typical Output Characteristics 50 160 µA 140 µA 16 VCE = 1 V Collector Current IC (mA) Collector Current IC (mA) 20 120 µA 100 µA 12 80 µA 8 60 µA 40 µA 4 IB = 20 µA 0 1 2 3 4 5 40 30 20 10 0 6 0.2 Collector to Emitter Voltage VCE (V) 100 Collector Current 100 Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio hFE VCE = 1 V 10 Emitter ground f = 1 MHz 0.3 0.2 0.1 0 IC (mA) 0.5 1.0 1.5 Collector to Base Voltage 2.0 VCB (V) Noise Figure vs. Collector Current 8 20 7 f = 1 GHz 16 Noise Figure NF (dB) Gain Bandwidth Product fT (GHz) 1.0 0.4 Gain Bandwidth Product vs. Collector Current VCE = 3 V 12 8 4 f = 900 MHz VCE = 1 V 6 VCE = 2 V 5 4 3 2 VCE = 3 V 1 VCE = 1 V 0 1 0.8 Reverse Transfer Capacitance vs. Collector to Base Voltage 200 1.0 0.6 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 0 0.1 0.4 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 6 of 8 100 0 1 2 5 10 20 50 Collector Current IC (mA) 100 HTT1129E S21 Parameter vs. Collector Current 20 S21 Parameter |S21|2 (dB) f = 900MHz VCE = 3 V 16 12 8 VCE = 1 V 4 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 7 of 8 100 HTT1129E Package Dimensions JEITA Package Code RENESAS Code ¾ PXSF0006LA-A D Package Name MASS[Typ.] EMFPAK-6 / EMFPAK-6V 0.0012g A e c E A LP HE A L x M S b A e A2 A A1 y S Reference Symbol e1 S b I1 b1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 I1 Dimension in Millimeters Min 0.45 0 0.45 0.1 0.1 1.15 0.75 0.95 0.05 0.1 Nom 0.17 0.15 0.13 0.11 1.2 0.8 0.4 1.0 0.1 Max 0.5 0.01 0.49 0.25 0.15 1.25 0.85 1.05 0.15 0.3 0.05 0.05 0.3 0.7 0.35 Ordering Information Part Name HTT1129EZTL-E Quantity 5000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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