Diode Semiconductor Korea ER301 - - - ER306 VOLTAGE RANGE: 100 --- 600 V CURRENT: 3.0 A SUPER FAST RECTIFIERS FEATURES Low cost DO - 27 Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ER301 ER302 ER303 ER304 ER306 UNITS Maximum recurrent peak reverse voltage VRRM 100 200 300 400 600 V Maximum RMS voltage VRMS 70 140 210 280 420 V Maximum DC blocking voltage VDC 100 200 300 400 600 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 3.0 A IFSM 150.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage @ 3.0A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 VF IR 0.95 1.25 5.0 300.0 1.7 V A Maximum reverse recovery time (Note 1) trr 35 ns Typical junction capacitance (Note 2) CJ 95 pF Typical thermal resistance (Note 3) RθJA 20 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. ／Ｗ www.diode.kr Diode Semiconductor Korea ER301 - - - ER306 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. t rr 10 N 1. +0.5A D.U.T. (+) 25VDC (approx) (-) 0 OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) -0.25A -1.0A 1cm SET TIME BASE FOR 10 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . ER303 ER304 ER301 - ER302 3.0 ER306 2.0 T J =25 Pulse Width=300 µ s 1.0 0 0.4 0.8 1.2 1.6 2.0 2.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 4.0 CURRENT,AMPERES INSTANTANEOUS FORWARD FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 1000 600 400 200 100 60 40 20 10 TJ=25 f=1.0MHz 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS 3.0 2.5 2.0 1.5 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead length 1.0 0.5 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,AMPERES JUNCTION CAPACITANCE,pF FIG.4 -- TYPICAL JUNCTION CAPACITANCE z 175 150 8.3ms Single Half Sine-Wave 125 100 75 50 25 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz CURRENT,MICROAMPERES INSTANTANEOUS REVERSE FIG.6 -- TYPICAL REVERSE CHARACTERISTICS 1000 T J=100 100 10 TJ=75 1 .0 TJ=25 0 .1 0 .0 1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. www.diode.kr