MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be soldered using wave or reflow. The • modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD *200 1.6 mW mW/°C DEVICE MARKING AND RESISTOR VALUES Device http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM 3 3 1 A8x 2 SOT−23 CASE 318 STYLE 6 1 2 A8x = Device Code x = (See Table) ORDERING INFORMATION Device Package Shipping† MMUN2211LT1 SOT−23 3000/Tape & Reel MMUN2212LT1 SOT−23 3000/Tape & Reel MMUN2213LT1 SOT−23 3000/Tape & Reel MMUN2214LT1 SOT−23 3000/Tape & Reel MMUN2215LT1 SOT−23 3000/Tape & Reel MMUN2216LT1 SOT−23 3000/Tape & Reel MMUN2230LT1 SOT−23 3000/Tape & Reel Marking R1(K) R2(K) MMUN2211LT1 A8A 10 10 MMUN2212LT1 A8B 22 22 MMUN2213LT1 A8C 47 47 MMUN2214LT1 A8D 10 47 MMUN2215LT1 A8E 10 ∞ MMUN2231LT1 SOT−23 3000/Tape & Reel MMUN2216LT1 A8F 4.7 ∞ MMUN2232LT1 SOT−23 3000/Tape & Reel MMUN2230LT1 A8G 1.0 1.0 MMUN2233LT1 SOT−23 3000/Tape & Reel MMUN2231LT1 A8H 2.2 2.2 MMUN2234LT1 SOT−23 3000/Tape & Reel MMUN2232LT1 A8J 4.7 4.7 MMUN2238LT1 SOT−23 3000/Tape & Reel MMUN2233LT1 A8K 4.7 47 MMUN2241LT1 SOT−23 3000/Tape & Reel MMUN2234LT1 A8L 22 47 MMUN2238LT1 A8R 2.2 ∞ MMUN2241LT1 A8U 100 ∞ 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MMUN2211LT1/D MMUN2211LT1 Series THERMAL CHARACTERISTICS Rating Thermal Resistance − Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Symbol Value Unit RθJA 625 °C/W TJ, Tstg −65 to +150 °C TL 260 10 °C Sec Maximum Temperature for Soldering Purposes, Time in Solder Bath ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 2), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 350 350 − − − − − − − − − − − − − VCE(sat) − − 0.25 Characteristic OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2238LT1 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. http://onsemi.com 2 Vdc MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 kΩ R1/R2 0.8 0.17 − − 0.8 0.055 0.38 1.0 0.21 − − 1.0 0.1 0.47 1.2 0.25 − − 1.2 0.185 0.56 ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k Ω) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω) MMUN2230LT1 MMUN2215LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc MMUN2211LT1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 250 200 1 IC/IB = 10 TA = −25°C 25°C 75°C 0.1 150 100 0.01 RθJA= 625°C/W 50 0 −50 0 50 100 0.001 150 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75°C 25°C −25°C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 3 2 1 0 100 f = 1 MHz lE = 0 A TA = 25°C 0 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 1 2 3 30 50 40 10 TA = −25°C 0 20 Figure 4. Output Capcitance 25°C 10 10 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5°C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 4 5 6 7 8 9 25°C 75°C 1 0.1 0 10 TA = −25°C Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 MMUN2211LT1 Series − 1000 1 TA = −25°C IC/IB = 10 25°C 75°C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 VCE = 10 V TA = 75°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 A TA = 25°C 2 1 75°C 25°C TA = −25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 50 40 0.001 2 0 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 8. DC Current Gain 4 3 −25°C 25°C 100 VO = 0.2 V TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MMUN2211LT1 Series 10 IC/IB = 10 TA = −25°C 75°C 25°C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 TA = 75°C 25°C −25°C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 0.6 0.4 0.2 10 20 30 25°C 10 TA = −25°C 1 0.1 0.01 VO = 5 V 0.001 50 40 75°C 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V IC, COLLECTOR CURRENT (mA) 1 0 0 1000 TA = −25°C 25°C 75°C 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MMUN2211LT1 Series 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 300 VCE = 10 TA = 75°C 250 25°C 200 −25°C 150 100 50 0 1 2 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 4 Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 f = 1 MHz lE = 0 A TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 25°C TA = −25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = −25°C VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 4 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1 1000 VCE = 10 V IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = 75°C 0.1 25°C −25°C 0.01 TA = 75°C 100 10 1 0.001 4 8 12 16 20 24 0 28 25 IC, COLLECTOR CURRENT (mA) 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) vs. IC Figure 23. DC Current Gain 6 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 5 4 3 2 1 0 VO = 5 V 75°C 25°C 10 1 TA = −25°C 0.1 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C −25°C TA = −25°C 75°C 1 0.1 0 25°C 10 20 IC, COLLECTOR CURRENT (mA) Figure 26. Output Voltage vs. Input Current http://onsemi.com 8 30 8 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25°C 100 75°C 25°C TA = −25°C 0.01 TA = −25°C 10 VCE = 10 V 1 0.001 2 7 12 17 22 27 1 32 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) vs. IC Figure 28. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C TA = −25°C 10 1 0.1 25°C VO = 5 V 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance Figure 30. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 75°C TA = −25°C 25°C 75°C 1 0.1 0 12 18 6 24 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage vs. Output Current http://onsemi.com 9 30 8 MMUN2211LT1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 10 MMUN2211LT1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−08 ISSUE AI NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMUN2211LT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 12 For additional information, please contact your local Sales Representative. MMUN2211LT1/D