MBRAF3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage − 200 V 150°C Operating Junction Temperature Guard−Ring for Stress Protection This is a Pb−Free Device http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS Mechanical Charactersistics SMA−FL CASE 403AA PLASTIC STYLE 6 • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ESD Ratings: Human Body Model = 1B MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 100°C) IF(AV) 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Operating Junction Temperature TJ −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 MARKING DIAGRAM AYWW RACG G RAC = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF3200T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRAF3200T3/D MBRAF3200T3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1 Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 25 90 °C/W Symbol Value Unit 1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 3.0 A, TJ = 25°C) (IF = 4.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR V 0.84 0.86 0.62 1.0 6.0 mA mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 TC = 100°C TC = 150°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 TC = 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.5 0.6 0.7 0.8 0.9 1 1.1 Figure 2. Maximum Forward Voltage 1.2 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 0.4 Figure 1. Typical Forward Voltage 1.0E−04 1.0E−02 TC = 100°C TC = 150°C 1.0E−03 1.0E−06 TC = 25°C 1.0E−04 1.0E−07 1.0E−09 0 0.2 0.3 VF, INSTANTANEOUS VOLTAGE (V) TC = 150°C 1.0E−08 TC = 25°C 1 0.1 1.2 TC = 150°C 10 VF, INSTANTANEOUS VOLTAGE (V) 1.0E−03 1.0E−05 TC = 100°C 1.0E−05 TC = 25°C 20 40 60 80 100 120 140 160 180 200 1.0E−06 0 VR, REVERSE VOLTAGE (V) 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 2 MBRAF3200T3G C, CAPACITANCE (pF) 1000 TC = 25°C f = 1 MHz Typical Capacitance at 0 V = 209 V 100 10 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 6. Typical Transient Thermal Response, Junction−to−Ambient http://onsemi.com 3 100 1000 MBRAF3200T3G PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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