ON MBRAF3200T3G Surface mount schottky power rectifier Datasheet

MBRAF3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage − 200 V
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
This is a Pb−Free Device
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
Mechanical Charactersistics
SMA−FL
CASE 403AA
PLASTIC
STYLE 6
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
V
Average Rectified Forward Current
(TL = 100°C)
IF(AV)
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature
TJ
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 0
1
MARKING DIAGRAM
AYWW
RACG
G
RAC
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF3200T3G
SMA−FL
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBRAF3200T3/D
MBRAF3200T3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Value
Unit
RqJL
RqJA
25
90
°C/W
Symbol
Value
Unit
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 3.0 A, TJ = 25°C)
(IF = 4.0 A, TJ = 25°C)
(IF = 3.0 A, TJ = 150°C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
IR
V
0.84
0.86
0.62
1.0
6.0
mA
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
100
TC = 100°C
TC = 150°C
10
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
TC = 25°C
1
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.5
0.6
0.7
0.8
0.9
1
1.1
Figure 2. Maximum Forward Voltage
1.2
1.0E−01
IR, MAXIMUM REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
0.4
Figure 1. Typical Forward Voltage
1.0E−04
1.0E−02
TC = 100°C
TC = 150°C
1.0E−03
1.0E−06
TC = 25°C
1.0E−04
1.0E−07
1.0E−09
0
0.2 0.3
VF, INSTANTANEOUS VOLTAGE (V)
TC = 150°C
1.0E−08
TC = 25°C
1
0.1
1.2
TC = 150°C
10
VF, INSTANTANEOUS VOLTAGE (V)
1.0E−03
1.0E−05
TC = 100°C
1.0E−05
TC = 25°C
20
40
60
80
100
120 140 160 180 200
1.0E−06
0
VR, REVERSE VOLTAGE (V)
20
40
60
80
100
120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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2
MBRAF3200T3G
C, CAPACITANCE (pF)
1000
TC = 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
100
10
0
20
40
60
80
100
120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 6. Typical Transient Thermal Response, Junction−to−Ambient
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3
100
1000
MBRAF3200T3G
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA−01
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D
DIM
A
b
c
D
E
E1
L
TOP VIEW
A
c
RECOMMENDED
SOLDER FOOTPRINT*
C
SIDE VIEW
SEATING
PLANE
1.76
2X
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
5.56
b
1.30
2X
L
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRAF3200T3/D
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